Interface Properties of 4H-SiC MOS Structures Studied by a Slow Positron Beam
2004 ◽
Vol 445-446
◽
pp. 144-146
1999 ◽
Vol 149
(1-4)
◽
pp. 175-180
◽
2004 ◽
Vol 37
(13)
◽
pp. 1841-1844
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2007 ◽
Vol 4
(10)
◽
pp. 3659-3663
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1991 ◽
Vol 305
(2)
◽
pp. 269-274
◽
1991 ◽