The Physics and Technology of Amorphous SiO2
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69

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6

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Published By Springer US

9781461283010, 9781461310310

Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

Synthesis of Buried Dielectric Layers in Silicon by Ion Implantation

The Physics and Technology of Amorphous SiO2 ◽

10.1007/978-1-4613-1031-0_62 ◽

1988 ◽

pp. 487-516

Author(s):

Ian H. Wilson

Keyword(s):

Ion Implantation ◽

Dielectric Layers

Relationship Between Hole Trapping and Interface

The Physics and Technology of Amorphous SiO2 ◽

10.1007/978-1-4613-1031-0_59 ◽

1988 ◽

pp. 465-471 ◽

Cited By ~ 2

Author(s):

S. J. Wang ◽

J. M. Sung ◽

S. A. Lyon

Keyword(s):

Hole Trapping

The Influence of High Temperature Nitrogen Annealing on the Electrical Properties of Plasma Nitrided Oxides

The Physics and Technology of Amorphous SiO2 ◽

10.1007/978-1-4613-1031-0_54 ◽

1988 ◽

pp. 421-425

Author(s):

J. Camargo da Costa ◽

M. El-Sayed

Keyword(s):

High Temperature ◽

Electrical Properties ◽

Nitrogen Annealing

Evidence for Oxygen Bubbles in Fluorine Doped Amorphous Silicon Dioxide Thin Films

The Physics and Technology of Amorphous SiO2 ◽

10.1007/978-1-4613-1031-0_48 ◽

1988 ◽

pp. 353-358 ◽

Cited By ~ 1

Author(s):

A. G. Dias ◽

E. Bustarret ◽

R. C. da Silva

Keyword(s):

Thin Films ◽

Silicon Dioxide ◽

Amorphous Silicon ◽

Amorphous Silicon Dioxide

A Framework for Incorporating Memory Effects of Structural Relaxation in Models for Thermal Oxidation of Silicon

The Physics and Technology of Amorphous SiO2 ◽

10.1007/978-1-4613-1031-0_42 ◽

1988 ◽

pp. 307-313

Author(s):

R. W. Rendell ◽

K. L. Ngai

Keyword(s):

Thermal Oxidation ◽

Structural Relaxation ◽

Memory Effects

Influence of Different Preparation Methods on Interfacial (SiO2/Si) Parameters of Very Thin SiO2 Layers

The Physics and Technology of Amorphous SiO2 ◽

10.1007/978-1-4613-1031-0_40 ◽

1988 ◽

pp. 291-296

Author(s):

Georges Pananakakis ◽

Panagiota Morfouli ◽

Georges Kamarinos

Keyword(s):

Preparation Methods

Electrical and Interface Properties of MOS Structures of Getter Treated Silicon

The Physics and Technology of Amorphous SiO2 ◽

10.1007/978-1-4613-1031-0_39 ◽

1988 ◽

pp. 285-289

Author(s):

N. M. Ravindra ◽

Patrick Smith ◽

J. Narayan

Keyword(s):

Interface Properties ◽

Mos Structures

Metastabile and Multiply-Charged Individual Defects at the Si:SiO2 Interface

The Physics and Technology of Amorphous SiO2 ◽

10.1007/978-1-4613-1031-0_36 ◽

1988 ◽

pp. 267-272

Author(s):

M. J. Kirton ◽

M. J. Uren ◽

S. Collins

Keyword(s):

Multiply Charged

On the Relationship Between Thermal Growth and Thickness Inhomogeneities in Very Thin SiO2 Films

The Physics and Technology of Amorphous SiO2 ◽

10.1007/978-1-4613-1031-0_34 ◽

1988 ◽

pp. 255-258

Author(s):

X. Aymerich ◽

J. Suñé ◽

F. Campabadal ◽

Y. Placencia

Keyword(s):

Sio2 Films ◽

Thermal Growth ◽

The Relationship

Geometrical Methods in the Theory of Glassses

The Physics and Technology of Amorphous SiO2 ◽

10.1007/978-1-4613-1031-0_3 ◽

1988 ◽

pp. 37-46

Author(s):

Richard Kerner