Electrical and Interface Properties of MOS Structures of Getter Treated Silicon

1988 ◽  
pp. 285-289
Author(s):  
N. M. Ravindra ◽  
Patrick Smith ◽  
J. Narayan
Keyword(s):  
Interface Properties ◽  
Mos Structures

Improved Dielectric and Interface Properties of 4H-SiC MOS Structures Processed by Oxide Deposition and N2O Annealing

2006 ◽  
pp. 987-990
Author(s):  
Tsunenobu Kimoto ◽  
H. Kawano ◽  
Masato Noborio ◽  
Jun Suda ◽  
Hiroyuki Matsunami
Keyword(s):  
Interface Properties ◽  
Oxide Deposition ◽  
Mos Structures

Interface properties of MBE-grown MOS structures with InGaAs/InAlAs buried channel and in-situ high-k oxide

2009 ◽  
Vol 311 (7) ◽  
pp. 1950-1953 ◽  
Author(s):  
S. Oktyabrsky ◽  
V. Tokranov ◽  
S. Koveshnikov ◽  
M. Yakimov ◽  
R. Kambhampati ◽  
...  
Keyword(s):  
Interface Properties ◽  
Buried Channel ◽  
High K ◽  
Mos Structures

Interface Properties of 4H-SiC MOS Structures Studied by a Slow Positron Beam

2004 ◽  
Vol 445-446 ◽  
pp. 144-146
Author(s):  
Masaki Maekawa ◽  
Atsuo Kawasuso ◽  
Masahito Yoshikawa ◽  
Ayahiko Ichimiya
Keyword(s):  
Positron Beam ◽  
Interface Properties ◽  
Slow Positron ◽  
Mos Structures

Improved Dielectric and Interface Properties of 4H-SiC MOS Structures Processed by Oxide Deposition and N2O Annealing

2006 ◽  
Vol 527-529 ◽  
pp. 987-990 ◽  
Author(s):  
Tsunenobu Kimoto ◽  
H. Kawano ◽  
Masato Noborio ◽  
Jun Suda ◽  
Hiroyuki Matsunami
Keyword(s):  
Breakdown Strength ◽  
Oxide Thickness ◽  
Interface State ◽  
State Density ◽  
Interface Properties ◽  
Gate Oxides ◽  
Channel Mobility ◽  
Oxide Deposition ◽  
Mos Structures

Oxide deposition followed by high-temperature annealing in N2O has been investigated to improve the quality of 4H-SiC MOS structures. Annealing of deposited oxides in N2O at 1300oC significantly enhances the breakdown strength and decreases the interface state density to 3x1011 cm-2eV-1 at EC – 0.2 eV. As a result, high channel mobility of 34 cm2/Vs and 52 cm2/Vs has been attained for inversion-type MOSFETs fabricated on 4H-SiC(0001)Si and (000-1)C faces, respectively. The channel mobility shows a maximum when the increase of oxide thickness during N2O annealing is approximately 5 nm. A lateral RESURF MOSFET with gate oxides formed by the proposed process has blocked 1450 V and showed a low on-resistance of 75 mcm2, which is one of the best performances among lateral SiC MOSFETs reported.

scholarly journals Interface Properties of MOS Structures Prepared by Reactive Sputtering

Shinku ◽  
1967 ◽  
Vol 10 (12) ◽  
pp. 429-436
Author(s):  
Toyoki TAKEMOTO ◽  
Takashi ISHIHARA ◽  
Yasuaki TERUI ◽  
Kenji AKIYAMA
Keyword(s):  
Reactive Sputtering ◽  
Interface Properties ◽  
Mos Structures

scholarly journals Influence of vacuum annealing on interface properties of SiC (0001) MOS structures

2019 ◽  
Vol 58 (7) ◽  
pp. 078001
Author(s):  
Koji Ito ◽  
Takuma Kobayashi ◽  
Tsunenobu Kimoto
Keyword(s):  
Vacuum Annealing ◽  
Interface Properties ◽  
Mos Structures

Investigation of Deep Interface Traps in Very-Thin Oxide/Si Structures Prepared at Low Temperatures Using Chemical Solutions

2009 ◽  
Vol 609 ◽  
pp. 123-127
Author(s):  
Jaroslav Rusnák ◽  
Michal Ružinský ◽  
Kentaro Imamura ◽  
Taketoshi Matsumoto ◽  
Miloslav Štefečka ◽  
...  
Keyword(s):  
Low Temperatures ◽  
Low Voltage ◽  
Deep Level ◽  
Interface Properties ◽  
Voltage Step ◽  
Chemical Solutions ◽  
Thin Oxide ◽  
Transient Spectroscopy ◽  
Labview Platform ◽  
Mos Structures

An advanced equipment for the charge version of deep level transient spectroscopy (Q-DLTS) and C-V measurements with newly developed software on LabView platform is presented. The ability to record several Q-DLTS behaviors with different rate windows simultaneously is the most important property of the equipment. Q-DLTS with excitation of the MOS structures by low-voltage step and time domain C-V measurements were used to determine interface properties. The contribution presents mainly results obtained on very-thin oxide/n-type crystalline Si structures prepared by oxidation at very low temperatures in nitric acid solutions with various concentrations.

Interface properties of MOS structures on n-type 6HSiC

1997 ◽  
Vol 41 (7) ◽  
pp. 991-994
Author(s):  
P Friedrichs ◽  
E.P Burte ◽  
R Schörner
Keyword(s):  
Interface Properties ◽  
Mos Structures
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