Ferroelectric and Dielectric Characteristics of Bi3.25La0.75Ti3O12 Thin Films Prepared by the Polymeric Precursor Method

The ferroelectric properties and leakage current mechanisms of preferred oriented Bi3.25La0.75Ti3O12 (BLT) thin films deposited on La0.5Sr0.5CoO3 (LSCO) by the polymeric precursor method were investigated. Atomic force microscopy indicates that the deposited films exhibit a dense microstructure with a rather smooth surface morphology. The improved ferroelectric and leakage current characteristics can be ascribed to the plate-like grains of the BLT films.

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Ferroelectric properties and leakage current characteristics of Bi3.25La0.75Ti3O12 thin films prepared by the polymeric precursor method

Journal of Applied Physics ◽

10.1063/1.2133902 ◽

2005 ◽

Vol 98 (11) ◽

pp. 114103 ◽

Cited By ~ 18

Author(s):

A. Z. Simões ◽

M. A. Ramírez ◽

C. S. Riccardi ◽

E. Longo ◽

J. A. Varela

Keyword(s):

Thin Films ◽

Leakage Current ◽

Ferroelectric Properties ◽

Polymeric Precursor Method ◽

Polymeric Precursor ◽

Precursor Method ◽

Current Characteristics

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Ferroelectric properties and structural characterisation of lead titanate thin films prepared by polymeric precursor method

Advances in Materials and Processing Technologies ◽

10.1080/2374068x.2021.1971000 ◽

2021 ◽

pp. 1-11

Author(s):

O. Azaroual ◽

M. El Hasnaoui ◽

B. Akharchach ◽

A. Narjis

Keyword(s):

Thin Films ◽

Lead Titanate ◽

Ferroelectric Properties ◽

Polymeric Precursor Method ◽

Polymeric Precursor ◽

Precursor Method ◽

Structural Characterisation

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Microstructural and ferroelectric properties of PbZr1−xTixO3 thin films prepared by the polymeric precursor method

Materials Letters ◽

10.1016/s0167-577x(00)00401-8 ◽

2001 ◽

Vol 49 (6) ◽

pp. 365-370 ◽

Cited By ~ 29

Author(s):

M.S.J Nunes ◽

E.R Leite ◽

F.M Pontes ◽

N.M Duboc ◽

E Longo ◽

...

Keyword(s):

Thin Films ◽

Ferroelectric Properties ◽

Polymeric Precursor Method ◽

Polymeric Precursor ◽

Precursor Method

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Influence of temperature on the dielectric and ferroelectric properties of bismuth titanate thin films obtained by the polymeric precursor method

Materials Chemistry and Physics ◽

10.1016/j.matchemphys.2005.01.043 ◽

2005 ◽

Vol 92 (2-3) ◽

pp. 373-378 ◽

Cited By ~ 15

Author(s):

A.Z. Simões ◽

M.A. Ramirez ◽

C.S. Riccardi ◽

A. Ries ◽

E. Longo ◽

...

Keyword(s):

Thin Films ◽

Bismuth Titanate ◽

Ferroelectric Properties ◽

Polymeric Precursor Method ◽

Polymeric Precursor ◽

Precursor Method ◽

Influence Of Temperature ◽

Influence Of Temperature On

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Influence of the solution pH on the morphological, structural and electrical properties of Bi3.50La0.50Ti3O12 thin films obtained by the polymeric precursor method

Materials Letters ◽

10.1016/j.matlet.2005.03.051 ◽

2005 ◽

Vol 59 (22) ◽

pp. 2759-2764 ◽

Cited By ~ 5

Author(s):

A.Z. Simões ◽

A. Ries ◽

F. Moura ◽

C.S. Riccardi ◽

E. Longo ◽

...

Keyword(s):

Thin Films ◽

Electrical Properties ◽

Polymeric Precursor Method ◽

Polymeric Precursor ◽

Solution Ph ◽

Precursor Method ◽

Structural And Electrical Properties

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Ferroelectric properties and leakage current characteristics of radio-frequency-sputtered SrBi2(V0.1Nb0.9)2O9 thin films

Journal of Applied Physics ◽

10.1063/1.1766096 ◽

2004 ◽

Vol 96 (4) ◽

pp. 2181-2185 ◽

Cited By ~ 13

Author(s):

S. Ezhilvalavan ◽

Victor Samper ◽

Toh Wei Seng ◽

Xue Junmin ◽

John Wang

Keyword(s):

Thin Films ◽

Radio Frequency ◽

Leakage Current ◽

Ferroelectric Properties ◽

Current Characteristics

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Structural and Ferroelectric Properties of Epitaxial PbZr0.52Ti0.48O3 and BaTiO3 Thin Films Prepared on SrRuO3/SrTiO3(100) Substrates

MRS Proceedings ◽

10.1557/proc-688-c8.10.1 ◽

2001 ◽

Vol 688 ◽

Cited By ~ 3

Author(s):

J. Rodríguez Contreras ◽

J. Schubert ◽

U. Poppe ◽

O. Trithaveesak ◽

K. Szot ◽

...

Keyword(s):

Thin Films ◽

Rutherford Backscattering Spectrometry ◽

Ferroelectric Properties ◽

Hysteresis Loops ◽

Tunnel Current ◽

Single Crystalline ◽

Force Microscopy ◽

Atomic Force ◽

Transmission Electron ◽

Ferroelectric Hysteresis

AbstractWe have prepared single crystalline epitaxial PbZr0.52Ti0.48O3 (PZT) and BaTiO3 (BTO) thin films on single crystalline epitaxial SrRuO3 (SRO) thin films grown on SrTiO3 (100) (STO) substrates. PZT and SRO thin films were grown using high-pressure on-axis sputtering and BTO using pulsed laser deposition (PLD). The film thickness ranged between 12 to 165 nm. Their excellent structural properties, surface smoothness and interface sharpness were demonstrated by X-Ray Diffraction measurements (XRD), High Resolution Transmission Electron Microscopy (HRTEM) and Atomic Force Microscopy (AFM). Rutherford Backscattering Spectrometry and Channeling measurements (RBS/C) were used to analyze stoichiometry and crystalline quality. Ferroelectric hysteresis loops were obtained for all films of a thickness down to 12 nm showing a decrease in the remanent polarization Pr and an increase in the coercive field Ec towards thinner film thicknesses. Furthermore we have prepared tunneling junctions with a PZT or BTO barrier thickness of 3-6 nm. Reproducible bi-stable I-V-curves and bias dependence of the conductance were obtained suggesting an influence of the ferroelectric properties of the barrier material on the tunnel current.

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