Structural and Ferroelectric Properties of Epitaxial PbZr0.52Ti0.48O3 and BaTiO3 Thin Films Prepared on SrRuO3/SrTiO3(100) Substrates

2001 ◽  
Vol 688 ◽  
Author(s):  
J. Rodríguez Contreras ◽  
J. Schubert ◽  
U. Poppe ◽  
O. Trithaveesak ◽  
K. Szot ◽  
...  
Keyword(s):  
Thin Films ◽  
Rutherford Backscattering Spectrometry ◽  
Ferroelectric Properties ◽  
Hysteresis Loops ◽  
Tunnel Current ◽  
Single Crystalline ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Ferroelectric Hysteresis

AbstractWe have prepared single crystalline epitaxial PbZr0.52Ti0.48O3 (PZT) and BaTiO3 (BTO) thin films on single crystalline epitaxial SrRuO3 (SRO) thin films grown on SrTiO3 (100) (STO) substrates. PZT and SRO thin films were grown using high-pressure on-axis sputtering and BTO using pulsed laser deposition (PLD). The film thickness ranged between 12 to 165 nm. Their excellent structural properties, surface smoothness and interface sharpness were demonstrated by X-Ray Diffraction measurements (XRD), High Resolution Transmission Electron Microscopy (HRTEM) and Atomic Force Microscopy (AFM). Rutherford Backscattering Spectrometry and Channeling measurements (RBS/C) were used to analyze stoichiometry and crystalline quality. Ferroelectric hysteresis loops were obtained for all films of a thickness down to 12 nm showing a decrease in the remanent polarization Pr and an increase in the coercive field Ec towards thinner film thicknesses. Furthermore we have prepared tunneling junctions with a PZT or BTO barrier thickness of 3-6 nm. Reproducible bi-stable I-V-curves and bias dependence of the conductance were obtained suggesting an influence of the ferroelectric properties of the barrier material on the tunnel current.

Epitaxial BaTiO3 Thin Films on Different Substrates for Optical Waveguide Applications

1999 ◽  
Vol 597 ◽  
Author(s):  
M. Siegert ◽  
Judit G. Lisoni ◽  
C. H. Lei ◽  
A. Eckau ◽  
W. Zander ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Waveguides ◽  
Rutherford Backscattering Spectrometry ◽  
Optical Data ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Ion Channeling ◽  
Atomic Force ◽  
Transmission Electron

AbstractIn the process of developing thin film electro-optical waveguides we investigated the influence of different substrates on the optical and structural properties of epitaxial BaTiO3 thin films. These films are grown by on-axis pulsed laser deposition (PLD) on MgO(100), MgAl2O4(100), SrTiO3(100) and MgO buffered A12O3(1102) substrates. The waveguide losses and the refractive indices were measured with a prism coupling setup. The optical data are correlated to the results of Rutherford backscattering spectrometry/ion channeling (RBS/C). X-ray diffraction (XRD), atomic force microscopy (AFM) and transmission electron microscopy (TEM). BaTiO3 films on MgO(100) substrates show planar waveguide losses of 3 dB/cm and ridge waveguide losses of 5 dB/cm at a wavelength of 633 nm.

PLD Grown 3C-SiC Thin Films on Si: Morphology and Structure

2015 ◽  
Vol 821-823 ◽  
pp. 213-216
Author(s):  
S.M. Ryndya ◽  
N.I. Kargin ◽  
A.S. Gusev ◽  
E.P. Pavlova
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Rutherford Backscattering Spectrometry ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Selected Area Electron Diffraction ◽  
Atomic Force ◽  
Transmission Electron ◽  
Influence Of Substrate ◽  
Composition Structure

Silicon carbide thin films were obtained on Si (100) and (111) substrates by means of vacuum laser ablation of α-SiC ceramic target. The influence of substrate temperature on composition, structure and surface morphology of experimental samples was examined using Rutherford backscattering spectrometry (RBS), Fourier transform infrared spectroscopy (FTIR), scanning electron microscopy (SEM), conventional and high-resolution transmission electron microscopy (TEM/HRTEM), atomic force microscopy (AFM), selected area electron diffraction (SAED) and X-ray diffraction (XRD) methods.

Investigation of Growth Evolution in c-Axis SrBi2Nb2O9 Epitaxial Thin Films

1999 ◽  
Vol 574 ◽  
Author(s):  
J. Lettieri ◽  
M. A. Zurbuchen ◽  
G. W. Brown ◽  
Y. Jia ◽  
W. Tian ◽  
...  
Keyword(s):  
Thin Films ◽  
Rutherford Backscattering Spectrometry ◽  
Growth Conditions ◽  
Layer Growth ◽  
Spiral Growth ◽  
Layer By Layer ◽  
Epitaxial Thin Films ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron

Abstract(001)-oriented epitaxial SrBi2Nb2O9 thin films have been grown by pulsed laser deposition on (001) SrTiO3 and (001) LaAlO3—Sr2AlTaO6 substrates at optimized growth conditions. 4-circle x-ray diffraction, Rutherford backscattering spectrometry, and transmission electron microscopy reveal highly oriented epitaxial films. Atomic force microscopy indicates spiral growth for films grown on SrTiO3 and layer-by-layer growth for films grown on LaAlO3—Sr2AlTaO6.

WO3:Mo and WO3:Ti Thin Films Deposited by Spray Pyrolysis: The Influence of Metallic Concentration on Physical Properties: An Electron Microscopy and Atomic Force Study

2019 ◽  
Vol 286 ◽  
pp. 49-63
Author(s):  
Dwight Acosta ◽  
Francisco Hernández ◽  
Alejandra López-Suárez ◽  
Carlos Magaña
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Ultra Violet ◽  
Surface Characteristics ◽  
Structural Defects ◽  
Force Microscopy ◽  
Glass Substrates ◽  
Atomic Force ◽  
Transmission Electron ◽  
Resolution Electron

WO3:Mo and WO3:Ti thin films have been deposited on FTO/Glass substrates by the pulsed chemical spray technique at a substrate temperature of Ts= 450°C. The influence of Mo and Ti doping on the structural, electrical, and optical behavior of WO3thin films, has been studied by X-Ray Diffraction (XRD), Scanning Electron Microscopy (SEM), Transmission Electron Microscopy (TEM), Atomic Force Microscopy (AFM), Ultra Violet and Visible Spectrometry (UV-VIS), and Surface Conductivity Methods (Four Points). Doped WO3films presents similar polycrystalline structures but with noticeable modifications in surface configurations at micrometric and nanometric levels, as the Mo and Ti concentration is systematically increased in the starting sprayed solution. From processed High-Resolution Electron Micrographs (HREM), a low density of structural defects was found on pure and doped WO3grains. This lead to conclude that variations in films surface characteristics are mainly related with metallic doping concentrations which in turn, have noticeable influence in electrical and optical behaviors reported in this work.

Anisotropic Behaviour of Surface Roughening in Lattice Mismatched Heteroepitaxial Thin Films

1996 ◽  
Vol 436 ◽  
Author(s):  
Cengiz S. Ozkan ◽  
William D. Nix ◽  
Huajian Gao
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Lattice Mismatch ◽  
Surface Roughening ◽  
Silicon Substrates ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Annealing Experiments

AbstractHeteroepitaxial Si1-xGex. thin films deposited on silicon substrates exhibit surface roughening via surface diffusion under the effect of a compressive stress which is caused by a lattice mismatch. In these films, surface roughening can take place in the form of ridges which can be aligned along <100> or <110> directions, depending on the film thickness. In this paper, we investigate this anisotropic dependence of surface roughening and present an analysis of it. We have studied the surface roughening behaviour of 18% Ge and 22% Ge thin films subjected to controlled annealing experiments. Transmission electron microscopy and atomic force microscopy have been used to study the morphology and microstructure of the surface ridges and the dislocations that form during annealing.

Stress origin and relaxation in epitaxial AlN thin films on SiC

2001 ◽  
Vol 696 ◽  
Author(s):  
Ravi Bathe ◽  
R.D. Vispute ◽  
Daniel Habersat ◽  
R. P. Sharma ◽  
T. Venkatesan ◽  
...  
Keyword(s):  
Thin Films ◽  
Rutherford Backscattering Spectrometry ◽  
Wide Band ◽  
X Ray Diffraction ◽  
Wide Band Gap ◽  
X Ray ◽  
Force Microscopy ◽  
Ion Channeling ◽  
Atomic Force ◽  
Highly Strained

AbstractWe have investigated the epitaxy, surfaces, interfaces, and defects in AlN thin films grown on SiC by pulsed laser deposition. The stress origin, evolution, and relaxation in these films is reported. The crystalline structure and surface morphology of the epitaxially grown AlN thin films on SiC (0001) substrates have been studied using x-ray diffraction (θ–2θ, ω, and Ψ scans) and atomic force microscopy, respectively. The defect analysis has been carried out by using Rutherford backscattering spectrometry and ion channeling technique. The films were grown at various substrate temperatures ranging from room temperature to 1100 °C. X-ray diffraction measurements show highly oriented AlN films when grown at temperatures of 750- 800 °C, and single crystals above 800 °C. The films grown in the temperature range of 950 °C to 1000 °C have been found to be highly strained, whereas the films grown above 1000 °C were found to be cracked along the crystallographic axes. The results of stress as a function of growth temperature, thermal mismatch, growth mode, and buffer layer thickness will be presented, and the implications of these results for wide band gap power electronics will be discussed.

scholarly journals Spatial variation of ferroelectric properties in Pb(Zr0.3, Ti0.7)O3 thin films studied by atomic force microscopy

2000 ◽  
Vol 87 (11) ◽  
pp. 8031-8034 ◽  
Author(s):  
James A. Christman ◽  
Seung-Hyun Kim ◽  
Hiroshi Maiwa ◽  
Jon-Paul Maria ◽  
Brian J. Rodriguez ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Force Microscopy ◽  
Spatial Variation ◽  
Ferroelectric Properties ◽  
Force Microscopy ◽  
Atomic Force

Self-Assembled Growth of Highly Oriented Para- Sexiphenyl Thin Films Controlled by Elastic Strain

2001 ◽  
Vol 665 ◽  
Author(s):  
Andrei Yu. Andreev ◽  
Helmut Sitter ◽  
Christoph J. Brabec ◽  
Peter Hinterdorfer ◽  
Günter Springholz ◽  
...  
Keyword(s):  
Thin Films ◽  
Substrate Surface ◽  
Growth Time ◽  
Crystallographic Structure ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Degree Of Anisotropy ◽  
Figure Technique ◽  
Crystallographic Planes

ABSTRACTWe have studied the structure and growth regularities of highly ordered para-sexiphenyl (C36H26) thin films deposited by Hot Wall Epitaxy on mica. In particular, atomic force microscopy (AFM) was used to investigate the early growth stage of these films, in order to find the process controlling parameters. It was shown that the substrate temperature and the growth time are important parameters for control of the film morphology, in terms of the degree of anisotropy and long range order. X-ray diffraction pole figure technique and transmission electron microscopy were also used to characterize the crystallographic structure of the thicker films. We have shown that the highly ordered crystallites of para-sexiphenyl (showing needle-like morphology by AFM) are oriented with their (11 1 ) or (11 2 ) crystallographic planes parallel to the substrate surface. For each of these two orientations there are two opposite directions for growth of crystallites reflecting the two-fold symmetry of the mica surface.

Growth of heteroepitaxial GaSb thin films on Si(100) substrates

2004 ◽  
Vol 19 (8) ◽  
pp. 2315-2321 ◽  
Author(s):  
Thang Nguyen ◽  
Walter Varhue ◽  
Edward Adams ◽  
Mark Lavoie ◽  
Stephen Mongeon
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Lattice Mismatch ◽  
Stacking Faults ◽  
Heteroepitaxial Growth ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Radio Frequency Sputtering ◽  
Atomic Force ◽  
Transmission Electron

The heteroepitaxial growth of GaSb thin films on Si(100) and GaAs(100) substrates is presented. The growth technique involves the use of atomic Ga and Sb species, which are provided by thermal effusion and radio frequency sputtering, respectively. The crystalline quality of the heteroepitaxial GaSb film on the Si substrate is high despite the larger lattice mismatch. Epitaxial quality is determined by high-resolution x-ray diffraction and Rutherford backscatter spectrometry channeling. Atomic-force microscopy is used to monitor the evolution of surface morphology with increasing film thickness. Transmission electron microscopy shows the formation of stacking faults at the Si/GaSb interface and their eventual annihilation with increasing GaSb film thickness. Annihilation of stacking faults occurs when two next-neighbor mounds meet during the overgrowth of a common adjacent mound.

EFFECT OF PRE-HEATING TEMPERATURE ON THE CHARACTERISTICS OF PZT THIN FILMS GROWN BY USING A TRIOL SOL–GEL ROUTE

2007 ◽  
Vol 14 (02) ◽  
pp. 229-234
Author(s):  
SARAWUT THOUNTOM ◽  
MANOCH NAKSATA ◽  
KENNETH MACKENZIE ◽  
TAWEE TUNKASIRI
Keyword(s):  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Heating Temperature ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Hysteresis Loops ◽  
Lead Zirconate ◽  
Pzt Thin Films ◽  
Pzt Films ◽  
Ferroelectric Hysteresis

Lead zirconate titanate (PZT) films with compositions near the morphotropic phase boundary were fabricated on Pt (111)/ Ti / SiO 2/ Si (100) using the triol sol–gel method. The effect of the pre-heating temperature on the phase transformations, microstructures, electrical properties, and ferroelectric properties of the PZT thin films was investigated. Randomly oriented PZT thin films pre-heated at 400°C for 10 min and annealed at 600°C for 30 min showed well-defined ferroelectric hysteresis loops with a remnant polarization of 26.57 μC/cm2 and a coercive field of 115.42 kV/cm. The dielectric constant and dielectric loss of the PZT films were 621 and 0.0395, respectively. The microstructures of the thin films are dense, crack-free, and homogeneous with fine grains about 15–20 nm in size.

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