Kinetic Features of Solid-State Reactive Diffusion between Au and Sn-Base Solder

2007 ◽  
Vol 539-543 ◽  
pp. 2473-2478 ◽  
Author(s):  
M. Kajihara ◽  
T. Takenaka

The kinetics of the solid-state reactive diffusion between Au and Sn was experimentally observed using Sn/Au/Sn diffusion couples prepared by a diffusion bonding technique. The diffusion couples were isothermally annealed at a temperature of T = 453 K. Due to annealing, AuSn, AuSn2 and AuSn4 compound layers are formed at the interface in the diffusion couple. The experimental results were used to evaluate quantitatively the effect of Ni on the growth of the Au–Sn compounds. The evaluation indicates that the addition of Ni into Sn between 1 and 5 mass% accelerates the growth of the Au–Sn compounds at T = 433–473 K.

2011 ◽  
Vol 172-174 ◽  
pp. 470-474
Author(s):  
Masanori Kajihara ◽  
Shingo Nakamura

The reactive diffusion between Ti and a bronze was experimentally examined using sandwich diffusion couples consisting of Ti and a Cu-9.3Sn-0.3Ti alloy. The diffusion couples were isothermally annealed at temperatures ofT= 923-1023 K. During annealing, CuTi, (Cu, Sn)4Ti3and (Sn, Cu)5Ti6compounds are formed as layers at the interface in the diffusion couple. The overall growth of the compound layers is controlled by volume diffusion atT= 1023 K but by boundary and volume diffusion atT= 923-973 K. Hence, the interface reaction is not the bottleneck for the growth of the compound layers under the present experimental conditions.


2017 ◽  
Vol 58 (1) ◽  
pp. 16-22 ◽  
Author(s):  
Yoshiki Takamatsu ◽  
Minho O ◽  
Masanori Kajihara

1995 ◽  
Vol 152 (2) ◽  
pp. 385-392 ◽  
Author(s):  
V. H. Garcia ◽  
C. Scherer ◽  
P. M. Mors

2000 ◽  
Vol 646 ◽  
Author(s):  
Sungtae Kim ◽  
R. Sakidja ◽  
Z. F. Dong ◽  
J. H. Perepezko ◽  
Yeon Wook Kim

ABSTRACTThe high melting temperature and oxidation resistance of the Mo5SiB2 (T2) phase and multiphase microstructures incorporating the T2 phase in the Mo-Si-B system have motivated further studies for applications in very high temperature environments. Since the long term microstructural stability is determined by diffusional processes, diffusion couples consisting of binary boride and silicide phases have been examined in order to evaluate the kinetics of T2 phase development and the relative diffusivities controlling the kinetics. Long term annealing (500 hrs) of the Mo5Si3/Mo2B diffusion couple yields the phase sequence of Mo5Si3/Mo3Si/T2/Mo2B at 1600°C. This indicates that the T2 phase initiates and grows from the Mo2B side to a thickness of about 32μm and the Mo3Si phase initiates and grows from the Mo5Si3 side to a thickness of about 15μm. Other annealing treatments allow for an analysis of the diffusion kinetics based upon the layer thickening and composition profile measurements. To identify the crystallographic growth direction of T2 on Mo2B, a wedge shaped TEM sample with very thin leading edge was prepared. Microstructure images indicate that the growth mode of the T2 phase is columnar. There is a clear tendency for the growth of T2 to be approximately normal to c-axis.


Sign in / Sign up

Export Citation Format

Share Document