Long Carrier Lifetime in 4H-SiC Epilayers Using Chlorinated Precursors

2009 ◽  
Vol 615-617 ◽  
pp. 291-294 ◽  
Author(s):  
Amitesh Shrivastava ◽  
Paul B. Klein ◽  
E.R. Glaser ◽  
Joshua D. Caldwell ◽  
A.V. Bolotnikov ◽  
...  
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Tantalum Carbide ◽  
Time Resolved ◽  
Carrier Lifetimes ◽  
Minority Carrier Lifetimes ◽  
Time Resolved Photoluminescence ◽  
Graphite Susceptor

In this work we report the measurement of minority carrier lifetimes using the time resolved photoluminescence technique. It was found that 4H-SiC homo-epilayers grown using chlorine-based precursors have longer carrier lifetimes if used in conjunction with a tantalum carbide coated (TaC-coated) graphite susceptor rather than a SiC-coated graphite susceptor. Longer carrier lifetimes were obtained by optimal combinations of precursor gases and susceptor type. The controllable variation in lifetime from 250 ns to 9.9 s was demonstrated.

Comparison of Electrically and Optically Determined Minority Carrier Lifetimes in 6H-SiC

2005 ◽  
Vol 483-485 ◽  
pp. 417-420 ◽  
Author(s):  
Sergey A. Reshanov ◽  
Gerhard Pensl
Keyword(s):  
Open Circuit Voltage ◽  
Minority Carrier ◽  
Open Circuit ◽  
Time Resolved ◽  
Carrier Lifetimes ◽  
Voltage Decay ◽  
Analysis Technique ◽  
Minority Carrier Lifetimes ◽  
Optical Time ◽  
Time Resolved Photoluminescence

Minority carrier (hole) lifetime investigations are conducted on identical 6H-SiC p+-n structures by electrical (reverse recovery, open circuit voltage decay) and optical (time-resolved photoluminescence) techniques. The p+-n diodes are fabricated by Al implantation. Depending on the particular analysis technique, the lifetime is determined either electrically in different regions of the p+-n diode or optically in the n-type 6H-SiC epilayer and results, therefore, in different values ranging from ≈10 ns to 2.5 µs.

Evaluation of Long Carrier Lifetimes in Very Thick 4H-SiC Epilayers

2011 ◽  
Vol 679-680 ◽  
pp. 197-200 ◽  
Author(s):  
Tetsuya Miyazawa ◽  
Masahiko Ito ◽  
Hidekazu Tsuchida
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Diffusion Constant ◽  
Minority Carrier Lifetime ◽  
Bulk Carrier ◽  
Time Resolved ◽  
Carrier Lifetimes ◽  
High Injection ◽  
Time Resolved Photoluminescence ◽  
Annealing Method

We investigate the carrier lifetimes in very thick 4H-SiC epilayers (~250 μm) by means of time-resolved photoluminescence and microwave photoconductive decay. Both the minority carrier lifetime and the high injection lifetime are found to reach 18.5 μs by applying the carbon implantation/annealing method to the as-grown epilayers. We also study the epilayer thickness dependence of the carrier lifetime by successive experiments involving lifetime measurement and polishing. Based on the relationships between epilayer thickness and carrier lifetime, the bulk carrier lifetime and the hole diffusion constant are discussed.

scholarly journals Injection-dependent Minority Carrier Lifetime in Epitaxial Silicon Layers by Time-resolved Photoluminescence

2015 ◽  
Vol 77 ◽  
pp. 139-148 ◽  
Author(s):  
Stéphanie Parola ◽  
Mehdi Daanoune ◽  
Anne Kaminski-Cachopo ◽  
Guillaume Chareyre ◽  
Mustapha Lemiti ◽  
...  
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Epitaxial Silicon ◽  
Time Resolved ◽  
Time Resolved Photoluminescence

Enhanced Carrier Lifetime in Bulk-Grown 4H-SiC Substrates

2006 ◽  
Vol 527-529 ◽  
pp. 31-34 ◽  
Author(s):  
Jason R. Jenny ◽  
D.P. Malta ◽  
V.T. Tsvetkov ◽  
Mrinal K. Das ◽  
H. McD. Hobgood ◽  
...  
Keyword(s):  
Spectroscopic Analysis ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Deep Level ◽  
Operational Performance ◽  
Induced Current ◽  
Carrier Lifetimes ◽  
Minority Carrier Lifetimes ◽  
Electron Beam Induced Current ◽  
The Cost

To devise a means of circumventing the cost of thick SiC epitaxy to generate drift layers in PiN diodes for >10kV operation, we have endeavored to enhance the minority carrier lifetimes in bulk-grown substrates. In this paper, we discuss the results of a process that has been developed to enhance minority carrier lifetimes to in excess of 30 μs in bulk-grown 4H-SiC substrates. Measurement of lifetimes was principally conducted using microwave-photoconductive decay (MPCD). Confirmation of the MPCD lifetime result was obtained by electron beam induced current (EBIC) measurements. Additionally, deep level transient spectroscopic analysis of samples subjected to this process suggests that a significant reduction of deep level defects in general and of Z1/Z2, specifically, may account for the significantly enhanced lifetimes. Finally, a study of operational performance in devices employing drift layers fabricated from substrates produced by this process confirmed ambipolar lifetimes in the microsecond range.

Sign in / Sign up

Export Citation Format

Share Document