Comparison of Electrically and Optically Determined Minority Carrier Lifetimes in 6H-SiC

2005 ◽  
Vol 483-485 ◽  
pp. 417-420 ◽  
Author(s):  
Sergey A. Reshanov ◽  
Gerhard Pensl
Keyword(s):  
Open Circuit Voltage ◽  
Minority Carrier ◽  
Open Circuit ◽  
Time Resolved ◽  
Carrier Lifetimes ◽  
Voltage Decay ◽  
Analysis Technique ◽  
Minority Carrier Lifetimes ◽  
Optical Time ◽  
Time Resolved Photoluminescence

Minority carrier (hole) lifetime investigations are conducted on identical 6H-SiC p+-n structures by electrical (reverse recovery, open circuit voltage decay) and optical (time-resolved photoluminescence) techniques. The p+-n diodes are fabricated by Al implantation. Depending on the particular analysis technique, the lifetime is determined either electrically in different regions of the p+-n diode or optically in the n-type 6H-SiC epilayer and results, therefore, in different values ranging from ≈10 ns to 2.5 µs.

Long Carrier Lifetime in 4H-SiC Epilayers Using Chlorinated Precursors

2009 ◽  
Vol 615-617 ◽  
pp. 291-294 ◽  
Author(s):  
Amitesh Shrivastava ◽  
Paul B. Klein ◽  
E.R. Glaser ◽  
Joshua D. Caldwell ◽  
A.V. Bolotnikov ◽  
...  
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Tantalum Carbide ◽  
Time Resolved ◽  
Carrier Lifetimes ◽  
Minority Carrier Lifetimes ◽  
Time Resolved Photoluminescence ◽  
Graphite Susceptor

In this work we report the measurement of minority carrier lifetimes using the time resolved photoluminescence technique. It was found that 4H-SiC homo-epilayers grown using chlorine-based precursors have longer carrier lifetimes if used in conjunction with a tantalum carbide coated (TaC-coated) graphite susceptor rather than a SiC-coated graphite susceptor. Longer carrier lifetimes were obtained by optimal combinations of precursor gases and susceptor type. The controllable variation in lifetime from 250 ns to 9.9 s was demonstrated.

Temperature Dependence of Minority Carrier Lifetimes in a-Si:H

1996 ◽  
Vol 420 ◽  
Author(s):  
J. C. L. Cornish ◽  
Subaer ◽  
P. Jennings ◽  
G. T. Hefter
Keyword(s):  
Minority Carrier ◽  
Red Light ◽  
Open Circuit ◽  
Xenon Lamp ◽  
Carrier Lifetimes ◽  
Minority Carrier Lifetimes ◽  
Higher Temperature ◽  
Straight Lines ◽  
Deposited Films ◽  
Trap Activation

AbstractChanges in minority carrier lifetimes in a-Si:H, p-i-n photovoltaic cells due to light soaking have been investigated using the open circuit voltage decay (OCVD) method over the temperature range 223 K to 296 K.Using light from a Xenon flash lamp for excitation produced unexpected results: in the light soaked material, band-to-band transitions were evident at a higher temperature than for the asdeposited samples and became increasingly pronounced as the temperature was reduced. Results obtained using red light at 670 nm from a pulsed diode laser to produce relatively uniform- illumination throughout the thickness of the film, however, produced results very similar to those obtained for as-deposited films.Plots of the reciprocal of the trap activation time versus 1000/T for the results for both xenon lamp and laser excitation can be fitted by straight lines. Two distinct sets of lines with activation energies in the ranges 0.07 to 0.20 eV and 0.38 to 0.51 eV are obtained with the activation energy and the exponential prefactors exhibiting a Meyer-Neldel relationship.

scholarly journals Evaluation of Laser Doping of Si from MCLT Measurement

2004 ◽  
Vol 1 (2) ◽  
pp. 321-325
Author(s):  
Baghdad Science Journal
Keyword(s):  
Open Circuit Voltage ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Laser Energy ◽  
Minority Carrier Lifetime ◽  
Open Circuit ◽  
Experiment Data ◽  
Laser Doping ◽  
Voltage Decay ◽  
Doping Technique

The measurement of minority carrier lifetime (MCLT) ofp-n Si fabricated with aid of laser doping technique was reported. The measurement is achieved by using open circuit voltage decay (OCVD) technique. The experiment data confirms that the value of MCLT and proftle of Voc decay were very sensitive to the doping laser energy.

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