First Principles Investigation of Geometrical and Electronic Structure of Semiconductor Fe1-XCoxSi2
2010 ◽
Vol 663-665
◽
pp. 592-595
Keyword(s):
The electronic structure and optical properties of Fe1-xCoxSi2 have been studied using the first principle plane-wave pseudo-potential based on the density function theory. Substitutional doping is considered with Co concentrations of x=0.0625, 0.125, 0.1875 and 0.25, respectively. The calculated results show that the volume of β-FeSi2 increase and the band gap decrease with increasing of Co.
2020 ◽
Vol 98
(3)
◽
pp. 233-238
◽
2013 ◽
Vol 846-847
◽
pp. 1935-1938
Keyword(s):
2009 ◽
Vol 26
(1)
◽
pp. 017107
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Keyword(s):
2014 ◽
Vol 492
◽
pp. 273-275
Keyword(s):
2014 ◽
Vol 28
(06)
◽
pp. 1450045
◽
Keyword(s):