Dislocation Behavior in Bulk Crystals Grown by TSSG Method

2018 ◽  
Vol 924 ◽  
pp. 39-42 ◽  
Author(s):  
Kazuaki Seki ◽  
Kazuhiko Kusunoki ◽  
Yutaka Kishida ◽  
Hiroshi Kaido ◽  
Koji Moriguchi ◽  
...  

The dislocation behavior during bulk crystal growth on the 4H-SiC (000-1) C-face using the solution method was investigated. A 2 inch wafer with a 4° off angle was fabricated from a bulk crystal grown by the TSSG method, and the dislocations in the crystal were evaluated using synchrotron X-ray topography and TEM observation. From the topograph images, it was found that the TSD density remarkably decreased as the growth progressed. Furthermore, the TEM observation suggested that TSD decreases as the threading dislocations convert to in-plane defects toward the center of the crystal. Conventionally, it was considered that conversion of threading dislocations hardly occurs in solution growth on the C-face. However, it is thought that this phenomenon was not observable because the conversion efficiency is remarkably low. We speculate that dislocations may be transformed by suddenly making macrosteps during bulk growth.

2017 ◽  
Vol 46 (8) ◽  
pp. 4875-4882
Author(s):  
Benjamin W. Montag ◽  
Michael A. Reichenberger ◽  
Madhana Sunder ◽  
Philip B. Ugorowski ◽  
Kyle A. Nelson ◽  
...  

2015 ◽  
Vol 419 ◽  
pp. 143-148 ◽  
Author(s):  
Benjamin W. Montag ◽  
Michael A. Reichenberger ◽  
Madhana Sunder ◽  
Philip B. Ugorowski ◽  
Kyle A. Nelson ◽  
...  

1998 ◽  
Vol 510 ◽  
Author(s):  
Noboru Ohtani ◽  
Jun Takahashi ◽  
Masakazu Katsuno ◽  
Hirokatsu Yashiro ◽  
Masatoshi Kanaya

AbstractThe defect formation during sublimation bulk crystal growth of silicon carbide (SiC) is discussed. SiC bulk crystals are produced by seeded sublimation growth (modified-Lely method), where SiC source powder sublimes and is recrystallized on a slightly cooled seed crystal at uncommonly high temperatures (≥2000°C). The crystals contain structural defects such as micropipes (hollow core dislocations), subgrain boundaries, stacking faults and glide dislocations in the basal plane. The type and density of the defects largely depend on the crystal growth direction, and many aspects are different between the growth parallel and perpendicular to the <0001> c-axis. Micropipes are characteristic defects to the c-axis growth, while a large number of stacking faults are introduced during growth perpendicular to the c-axis. We discuss the cause and mechanism of the defect formation


2000 ◽  
Author(s):  
Jeffrey J. Derby ◽  
Andrew Yeckel

Abstract Modern finite element methods implemented on parallel supercomputers promise to allow the study of three-dimensional, time-dependent continuum phenomena in many engineering systems. This paper shows several examples of the fruitful application of these approaches to bulk crystal growth systems, where strongly nonlinear coupled phenomena are important.


2004 ◽  
Vol 268 (1-2) ◽  
pp. 328 ◽  
Author(s):  
I.D Matukov ◽  
D.S Kalinin ◽  
M.V Bogdanov ◽  
S.Yu Karpov ◽  
D.Kh Ofengeim ◽  
...  

2010 ◽  
Author(s):  
Jeffrey J. Derby ◽  
W. Wang ◽  
Katsuo Tsukamoto ◽  
Di Wu

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