Kinetic Monte Carlo Simulation of Nucleation and Growth Behavior in Surfactant-Mediated Epitaxy

2007 ◽  
Vol 121-123 ◽  
pp. 1149-1152
Author(s):  
D.M. Wang ◽  
Z.J. Ding

The behavior of island shape transition and nucleus density evolution in the early stage of epitaxial growth mediated by a monolayer of surfactant is studied by using a kinetic Monte Carlo simulations. The main kinetic processes included in the model are deposition, diffusion of atoms, exchange of adatoms with their underneath surfactant atoms, and reexchange in which an exchanged adatom resurfaces to the top of the surfactant layer. The simulation produces pattern transitions from small compact islands at low temperatures, to fractal-like islands at intermediate temperatures where the deposited adatoms can be easily incorporated into the surfactant layer, and then to regular compact islands at high temperatures where the reexchange becomes active. The island density as a function of temperature exhibits a complex N-shape. These results provide a reasonable explanation for the observed temperature dependence of the growth mode in existing experiments.

2013 ◽  
Vol 740-742 ◽  
pp. 393-396
Author(s):  
Maxim N. Lubov ◽  
Jörg Pezoldt ◽  
Yuri V. Trushin

The influence of attractive and repulsive impurities on the nucleation process of the SiC clusters on Si(100) surface was investigated. Kinetic Monte Carlo simulations of the SiC clusters growth show that that increase of the impurity concentration (both attractive and repulsive) leads to decrease of the mean cluster size and rise of the nucleation density of the clusters.


2006 ◽  
Vol 958 ◽  
Author(s):  
Sangheon Lee ◽  
Decai Yu ◽  
Gyeong S. Hwang

ABSTRACTKinetic Monte Carlo simulations were performed to examine mechanisms underlying the formation of Si nanoparticles in Si-rich SiO2. We have determined two important features of the embedded Si nanoparticle growth: “coalescence-like” and “pseudo Ostwald ripening”. The former is mainly responsible for fast Si particle growth at the early stage of annealing where the particles are close to each other, while the latter becomes important when the density of particles is low such that they are separated by large distances. The pseudo ripening process takes place several orders of magnitude slower than the “coalescence-like” growth. The predominance of “coalescence-like” behavior in the growth of Si nanoparticles results in a big variation in the particle size in terms of the Si:O ratio. Overall the predicted growth behavior based on our Monte Carlo simulations agrees well with experiments.


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