The Characterization of WC-Co Based Materials Boronized within Molten Salt Bath

2008 ◽  
Vol 144 ◽  
pp. 261-266 ◽  
Author(s):  
Sakıp Köksal

Coated WC-Co based cutting tool materials are widely used in machining applications. However some of the coating techniques, such as physical vapor deposition (PVD), involve only the physical deposition of coating layers which are prone to bulk delamination in some applications. Therefore functionally graded microstructure through diffusion is an efficient and widely used methods to improve the performance of coated WC-Co tools. In this work ISO P25, WC-Co based inserts were subjected to a thermochemical diffusion treatment by boronizing in a molten salt bath. The process was performed at 900, 1000, and 1100 °C for 1, 2 and 4 h. SEM, X-ray, EDS and microhardness analysis were performed on the samples. It was found that boron containing hard phases of W 2 B 5 , CoB, W 2 CoB 2 and WCoB were formed within the boronized region, occupying the grain boundary areas. An average microhardness value of 3600 HK 0.01 was measured in the near surface region which is substantially higher than the value of 1418 HK 0.01 representing the inner sections of the material.

2001 ◽  
Author(s):  
Flavio Horowitz ◽  
Marcelo B. Pereira ◽  
M. Behar ◽  
Luiz C. Barbosa ◽  
Stefano Pelli ◽  
...  

2004 ◽  
Vol 810 ◽  
Author(s):  
R. T. Crosby ◽  
L. Radic ◽  
K. S. Jones ◽  
M. E. Law ◽  
P.E. Thompson ◽  
...  

ABSTRACTThe relationships between Boron Interstitial Cluster (BIC) evolution and boron diffusion in relaxed Si0.8Ge0.2 have been investigated. Structures were grown by Molecular Beam Epitaxy (MBE) with surface boron wells of variant composition extending 0.25 [.proportional]m into the substrate, as well as boron marker layers positioned 0.50 [.proportional]m below the surface. The boron well concentrations are as follows: 0, 7.5×1018, 1.5×1019, and 5.0×1019 atoms/cm3. The boron marker layers are approximately 3 nm wide and have a peak concentration of 5×1018 atoms/cm3. Samples were ion implanted with 60 keV Si+ at a dose of 1×1014 atoms/cm2 and subsequently annealed at 675°C and 750°C for various times. Plan-view Transmission Electron Microscopy (PTEM) was used to monitor the agglomeration of injected silicon interstitials and the evolution of extended defects in the near surface region. Secondary Ion Mass Spectroscopy (SIMS) concentration profiles facilitated the characterization of boron diffusion behaviors during annealing. Interstitial supersaturation conditions and the resultant defect structures of ion implanted relaxed Si0.8Ge0.2 in both the presence and absence of boron have been characterized.


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