Making Ferromagnetic Heterostructures Si/Zn(1-X)MnXSiAs2 and Ge/Zn(1-X)MnXGeAs2

2010 ◽  
Vol 168-169 ◽  
pp. 313-316
Author(s):  
I.V. Fedorchenko ◽  
A. Rumiantsev ◽  
T. Kuprijanova ◽  
L. Kilanski ◽  
R.A. Szymczak ◽  
...  

The heterostructure ferromagnetic/semiconductor ZnSiAs2<Mn>/Si was obtained by using the Si-ZnAs2 phase diagram. The magnetic properties of Zn1-XMnXSiAs2 bulk crystals and ferromagnetic layered heterostructures were similar. The same method was used for preparing a ferromagnetic layer ZnGeAs2<Mn> on a germanium substrate.

2020 ◽  
Vol 13 (8) ◽  
pp. 083005
Author(s):  
Le Duc Anh ◽  
Taiki Hayakawa ◽  
Kohei Okamoto ◽  
Nguyen Thanh Tu ◽  
Masaaki Tanaka

1993 ◽  
Vol 07 (01n03) ◽  
pp. 867-870 ◽  
Author(s):  
H. SHIRAISHI ◽  
T. HORI ◽  
Y. YAMAGUCHI ◽  
S. FUNAHASHI ◽  
K. KANEMATSU

The magnetic susceptibility measurements have been made on antiferromagnetic compounds Mn1–xFexSn2 and the magnetic phase diagram was illustrated. The high temperature magnetic phases I and III, major phases, were analyzed on the basis of molecular field theory and explained the change of magnetic structure I⇌III occured at x≈0.8.


2002 ◽  
Vol 66 (18) ◽  
Author(s):  
T. Sasagawa ◽  
P. K. Mang ◽  
O. P. Vajk ◽  
A. Kapitulnik ◽  
M. Greven

ChemInform ◽  
2016 ◽  
Vol 47 (26) ◽  
Author(s):  
Jan Zubac ◽  
Kristina Vlaskova ◽  
Jan Prokleska ◽  
Petr Proschek ◽  
Pavel Javorsky

1990 ◽  
Vol 90-91 ◽  
pp. 340-342 ◽  
Author(s):  
H. Inaba ◽  
S. Murayama ◽  
K. Hoshi ◽  
Y. Obi

2016 ◽  
Vol 42 (5) ◽  
pp. 6100-6106 ◽  
Author(s):  
Q.R. Yao ◽  
Y.H. Shen ◽  
P.C. Yang ◽  
H.Y. Zhou ◽  
G.H. Rao ◽  
...  

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