Effect of Alloy Disorder Scattering on Electron Mobility Model for Strained-Si1-xGex/Si (101)

2011 ◽  
Vol 181-182 ◽  
pp. 364-369
Author(s):  
Cheng Wang ◽  
He Ming Zhang ◽  
Rong Xi Xuan ◽  
Hui Yong Hu
Keyword(s):  
Applied Stress ◽  
Electron Mobility ◽  
Physical Phenomenon ◽  
Mobility Model ◽  
Strained Si ◽  
Electron Effective Mass ◽  
Scattering Rate ◽  
Alloy Disorder ◽  
Strained Materials ◽  
Disorder Scattering

Si-based strained technology is currently an important topic of concern in the microelectronics field. The stress-induced enhancement of electron mobility contributes to the improved performance of Si-based strained devices. In this paper, Based on both the electron effective mass and the scattering rate models for strained-Si1-xGex/Si (101), an analytical electron mobility model for biaxial compressive strained-Si1-xGex /Si (101) is presented. The results show that the stress doesn’t make the electron mobility increased, but the electron mobility for [100] and [001] orientations decrease with increasing Ge fraction x, especially for [010] orientation expresses a sharp decrease. This physical phenomenon can be explained as: Although the applied stress (the higher the Ge fraction, the greater the applied stress) can enhance the electron mobility, alloy disorder scattering rate markedly increase. Overall the electron mobility decreases instead. The above result suggests that not all the mobilities for Si-based strained materials enhance with the stress applied. For the biaxial strained-SiGe material represented by Ge fraction, the effect of alloy disorder scattering on the enhancement of mobility must be concerned. The result can provide theoretical basis for the understanding of the improved physical characterizations and the enhanced mobility for Si-based strained materials.

Electron Mobility Model of Strained Si1-xGex(001)

2011 ◽  
Vol 181-182 ◽  
pp. 378-382
Author(s):  
Hui Yong Hu ◽  
Shuai Lei ◽  
He Ming Zhang ◽  
Rong Xi Xuan ◽  
Bin Shu
Keyword(s):  
Effective Mass ◽  
Density Of States ◽  
Electron Mobility ◽  
Doping Concentration ◽  
Golden Rule ◽  
Mobility Model ◽  
Collision Term ◽  
Strained Si ◽  
Scattering Rate ◽  
Kp Theory

Solving the Schrödinger equation with strain Hamiltonian and combining with KP theory, we obtained the conductivity effective mass and density of states effective mass of strained Si1-xGex(001) in this paper. On the basis of conductivity effective mass and density of states effective mass, considered of Fermi golden rule and Boltzman collision term approximation theory, scattering rate model was established in strained Si1-xGex(001). Based on the conductivity effective mass and scattering rate models we discussed the dependence of electron mobility on stress and doping concentration in strained Si1-xGex(001), it shows that electron mobility decrease with the increasing of stress and doping concentration. This result can provide valuable references to the research of electron mobility of strained Si1-xGexmaterials and the design of devices.

Model of Electron Scattering of Strained Si /Si1-xGex (100)

2011 ◽  
Vol 110-116 ◽  
pp. 3338-3342
Author(s):  
Jian Jun Song ◽  
Hua Ying Wu ◽  
He Ming Zhang ◽  
Hui Yong Hu ◽  
Heng Sheng Shan
Keyword(s):  
Electron Scattering ◽  
Electron Mobility ◽  
Acoustic Phonon ◽  
Golden Rule ◽  
Collision Term ◽  
Strained Si ◽  
Total Electron ◽  
Total Scattering ◽  
Scattering Rate ◽  
Term Approximation

Based on Fermi's golden rule and the theory of Boltzmann collision term approximation, taking into account all the scattering mechanisms contributed by ionized impurity, acoustic phonon and intervalley phonon, the model of total scattering rate of strained Si/(100) Si1-xGex is established. Simulating of the scattering models with Matlab software, it was found that the total scattering rate of electron in strained Si/(100) Si1-xGex decreases obviously with the increasing stress when Ge fraction x is less than 0.2 and the values continue to show a constant tendency, and that the total electron scattering rate of strained Si/(100) Si1-xGex decreases about 57% at most comparison with one of unstrained Si. The result can provide valuable references to the research of electron mobility of strained Si materials and the design of NMOS devices.

Electron Mobility Model for Tensile Strained-Si(101)

2014 ◽  
Vol 986-987 ◽  
pp. 131-135
Author(s):  
Jian An Wang ◽  
Meng Nan ◽  
Hui Yong Hu ◽  
He Ming Zhang
Keyword(s):  
Relaxation Time ◽  
Electron Mobility ◽  
Acoustic Phonon ◽  
Phonon Scattering ◽  
Impurity Scattering ◽  
Mobility Model ◽  
Strained Si ◽  
Average Momentum ◽  
Intervalley Scattering ◽  
Momentum Relaxation

Nowadays, the strained-Si technology has been used to maintain the momentum of semiconductor scaling due to its enhancement performance result from the higher mobility. In this paper, the influence of ionizing impurity scattering, acoustic phonon scattering and intervalley scattering to strained-Si (101) material is discussed.In addition, a calculation of the electron mobility in Strained-Si (101) material is made using the average momentum relaxation time method described in Ref [1]. The results show that the electron mobility increases gradually for both [001] and [100] orientations while for [010] orientation increases rapidly with the increasing Ge fraction x.[1]

Electron Mobility Model for Strained-Si Devices

2005 ◽  
Vol 52 (4) ◽  
pp. 527-533 ◽  
Author(s):  
S. Dhar ◽  
H. Kosina ◽  
V. Palankovski ◽  
S.E. Ungersbock ◽  
S. Selberherr
Keyword(s):  
Electron Mobility ◽  
Mobility Model ◽  
Strained Si

Electron Mobility Model for Strained-Si/(001) Si1-XGex

2010 ◽  
Vol 663-665 ◽  
pp. 477-480 ◽  
Author(s):  
Jiu Hua An ◽  
He Ming Zhang ◽  
Jian Jun Song ◽  
Xiao Yan Wang
Keyword(s):  
Analytical Model ◽  
Electron Mobility ◽  
Mobility Model ◽  
Theory And Practice ◽  
Device Performance ◽  
Strained Si ◽  
Biaxial Tensile

There has been much interest in the Si-based strained technology lately. The improvement of strained-Si device performance is due to the enhancement of the mobility, so the further study on mobility is essential in both theory and practice aspects. In this paper, an analytical model of the electron mobility of strained-Si material, such as biaxial tensile strained-Si material grown on relaxed Si1-xGex (0≤x≤0.6) substrates, as a function of strain and different orientations is obtained. The results show that the electron mobilities for [100] and [010] orientations increase rapidly with increasing Ge fraction x, and there is no electron mobility enhancement for [001] orientation in comparison to relaxed Si material.

Research on Electron Mobility Model for Tensile Strained-Si(101) with Properties of Semiconducting Materials

2013 ◽  
Vol 676 ◽  
pp. 8-12
Author(s):  
Nan Meng ◽  
Hui Yong Hu ◽  
He Ming Zhang ◽  
Xu Jia Shi ◽  
Rong Xi Xuan ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Acoustic Phonon ◽  
Phonon Scattering ◽  
Impurity Scattering ◽  
Mobility Model ◽  
Semiconducting Materials ◽  
Strained Si ◽  
Average Momentum ◽  
Intervalley Scattering ◽  
Momentum Relaxation

Abstract. Mobility is one of the most important properties of semiconductor material, and it has a great impact on the property of MOS devices.In this paper, the influence of ionizing impurity scattering, acoustic phonon scattering and intervalley scattering to strained-Si(101) material is discussed.In addition, a calculation of the electron mobility in Strained-Si(101) material is made using the average momentum relaxation time method described in Ref[1]. The results show that the electron mobility increases gradually for both [001] and [100] orientations while for [010] orientation increases rapidly with the increasing Ge fraction x.

Sign in / Sign up

Export Citation Format

Share Document