Si1-XGeX Selective Etchant for Gate-All-Around Transistors

2021 ◽  
Vol 314 ◽  
pp. 71-76
Author(s):  
Ken Harada ◽  
Tatsunobu Suzuki ◽  
Tomohiro Kusano ◽  
Kan Takeshita ◽  
Yusuke Oniki ◽  
...  
Keyword(s):  
Electron Microscope ◽  
Transmission Electron Microscope ◽  
Selective Etching ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Etch Rates

3 formulated etchants were prepared and their etch rates were measured using blanket wafers in order to confirm that the etching reactions on Si1-XGeX and Si are controllable. Si1-XGeX selective etching with those formulations was also verified using the wafers which had Si1-XGeX and Si multi-stacked structures. Cross-sectional transmission electron microscope (TEM) images suggested that the formulations were usable for Si1-XGeX selective etching processes.

Cross-sectional Transmission Electron Microscope Studies on Intrinsic Breakdown Spots of Thin Gate Oxides

1997 ◽  
Vol 36 (Part 1, No. 5A) ◽  
pp. 2561-2564 ◽  
Author(s):  
Satoshi Ikeda ◽  
Masao Okihara ◽  
Hidetsugu Uchida ◽  
Norio Hirashita
Keyword(s):  
Electron Microscope ◽  
Transmission Electron Microscope ◽  
Cross Sectional ◽  
Gate Oxides ◽  
Transmission Electron

Transmission electron microscope observation of diamond / WC interface

1996 ◽  
Vol 54 ◽  
pp. 700-701
Author(s):  
Geun-Hong Kim ◽  
Chang-Hwan Chun
Keyword(s):  
Electron Microscope ◽  
Transmission Electron Microscope ◽  
Cutting Tool ◽  
Nucleation And Growth ◽  
Interfacial Stress ◽  
Electron Microscope Observation ◽  
Ion Milling ◽  
Cross Sectional ◽  
Transmission Electron Microscope Observation ◽  
Transmission Electron

Commercial diamond coated WC-Co cutting tool has been investigated by transmission electron microscope (TEM) to understand the nucleation and growth of diamond on WC substrate. Cross-sectional specimens have been prepared by mechanical polishing followed by ion milling. TEM observations have been performed using analytical TEM, JEM 4000FX (JEOL Ltd.).The surface of the coated diamond is composed of grains of 2 - 5 μm in diameter. Each main grain is formed by columnar subgrains of 10 - 50 nm in diameter with similar orientations. Cobalt, a binder in cemented carbide, within 5 μm in depth from the carbide surface has been found to be removed to increase the adhesion of diamond.One of diamond subgrains, which has been grown large in [001] orientation on WC grains is shown in Fig. 1. High density of twins are found on (111) plane starting from WC grain boundaries. It is thought that the interfacial stress between diamond layer and WC grains is accommodated by these twins.

Sign in / Sign up

Export Citation Format

Share Document