scholarly journals Minority Carrier Diffusion Coefficient <i>D</i>*(<i>B,T</i>): Study in Temperature on a Silicon Solar Cell under Magnetic Field

2017 ◽  
Vol 09 (01) ◽  
pp. 1-10
Author(s):  
Richard Mane ◽  
Ibrahima Ly ◽  
Mamadou Wade ◽  
Ibrahima Datta ◽  
Marcel S. Douf ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Diffusion Coefficient ◽  
Solar Cell ◽  
Silicon Solar Cell ◽  
Minority Carrier ◽  
Carrier Diffusion

scholarly journals Influence of Temperature and Frequency on Minority Carrier Diffusion Coefficient in a Silicon Solar Cell under Magnetic Field

2019 ◽  
Vol 11 (10) ◽  
pp. 355-361
Author(s):  
Seydina Diouf ◽  
Mor Ndiaye ◽  
Ndeye Thiam ◽  
Youssou Traore ◽  
Mamadou Lamine Ba ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Diffusion Coefficient ◽  
Solar Cell ◽  
Silicon Solar Cell ◽  
Minority Carrier ◽  
Carrier Diffusion ◽  
Influence Of Temperature

scholarly journals Diffusion Coefficient in Silicon Solar Cell with Applied Magnetic Field and under Frequency: Electric Equivalent Circuits

2014 ◽  
Vol 04 (02) ◽  
pp. 84-92 ◽  
Author(s):  
Amadou Diao ◽  
Ndeye Thiam ◽  
Martial Zoungrana ◽  
Gokhan Sahin ◽  
Mor Ndiaye ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Diffusion Coefficient ◽  
Solar Cell ◽  
Applied Magnetic Field ◽  
Silicon Solar Cell ◽  
Equivalent Circuits

Minority Carrier Diffusion Length Improvement in Czochralski Silicon by Aluminum Gettering

1995 ◽  
Vol 378 ◽  
Author(s):  
Subhash M. Joshi ◽  
Ylrich M. GÖsele ◽  
Teh Y. Tan
Keyword(s):  
Solar Cell ◽  
Integrated Circuits ◽  
Minority Carrier ◽  
Minority Carrier Diffusion Length ◽  
Carrier Diffusion ◽  
Solar Cell Efficiency ◽  
Czochralski Silicon ◽  
Si Substrates ◽  
Cell Efficiency ◽  
Si Wafer

AbstractGettering is widely used for fabricating integrated circuits using Si substrates, and has great potential for solar cell fabrications as well. Recently available solar cell efficiency studies have shown the benefits of the wafer backside Al, attributable to effects of gettering, a wafer backside field, and passivation of grain boundaries and dislocations. In this paper, we report experimental results which showed unambiguously that Czochralski Si wafer bulk minority carrier diffusion lengths can be significantly improved due to gettering of impurities by wafer backside Al, which also provided a protection from environmental contamination.

Sign in / Sign up

Export Citation Format

Share Document