Minority Carrier Diffusion Length Improvement in Czochralski Silicon by Aluminum Gettering

1995 ◽  
Vol 378 ◽  
Author(s):  
Subhash M. Joshi ◽  
Ylrich M. GÖsele ◽  
Teh Y. Tan
Keyword(s):  
Solar Cell ◽  
Integrated Circuits ◽  
Minority Carrier ◽  
Minority Carrier Diffusion Length ◽  
Carrier Diffusion ◽  
Solar Cell Efficiency ◽  
Czochralski Silicon ◽  
Si Substrates ◽  
Cell Efficiency ◽  
Si Wafer

AbstractGettering is widely used for fabricating integrated circuits using Si substrates, and has great potential for solar cell fabrications as well. Recently available solar cell efficiency studies have shown the benefits of the wafer backside Al, attributable to effects of gettering, a wafer backside field, and passivation of grain boundaries and dislocations. In this paper, we report experimental results which showed unambiguously that Czochralski Si wafer bulk minority carrier diffusion lengths can be significantly improved due to gettering of impurities by wafer backside Al, which also provided a protection from environmental contamination.

scholarly journals Mixed co-solvent engineering of PEDOT:PSS to enhance its conductivity and hybrid solar cell properties

2016 ◽  
Vol 4 (44) ◽  
pp. 17537-17542 ◽  
Author(s):  
Joseph Palathinkal Thomas ◽  
Kam Tong Leung
Keyword(s):  
Solar Cell ◽  
Ethylene Glycol ◽  
Hybrid Solar Cell ◽  
High Conductivity ◽  
Solvent Engineering ◽  
Solar Cell Efficiency ◽  
Si Substrates ◽  
Cell Efficiency ◽  
P Addition

Addition of mixed co-solvents of ethylene glycol and methanol in PEDOT:PSS changes its microstructure, and produces high conductivity and hybrid solar cell efficiency exceeding 14.6% on planar Si substrates.

Combined Effects of Pyramid-Like Structures and Antireflection Coating on Si Solar Cell Efficiency

2015 ◽  
Vol 15 (10) ◽  
pp. 7624-7631 ◽  
Author(s):  
Chanseob Cho ◽  
Junghwa Oh ◽  
Byeungleul Lee ◽  
Bonghwan Kim
Keyword(s):  
Solar Cell ◽  
Thermal Annealing ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Antireflection Coating ◽  
Si Substrate ◽  
Solar Cell Efficiency ◽  
Cell Efficiency ◽  
Uniform Doping

We developed a novel process for synthesizing Si solar cells with improved efficiencies. The process involved the formation of pyramid-like structures on the Si substrate and the deposition and subsequent thermal annealing of an antireflection coating. The process consisted of three main stages. First, pyramid-like structures were textured on the Si substrate by reactive ion etching and subsequently etched using a mixture of HF, HNO3, and deionized water for 300 s. Next, an antireflection coating was deposited on the substrate and was subsequently thermally annealed in a furnace in a N2 atmosphere. After the annealing process, the minority carrier lifetime increased by approximately 40 μs. Further, because of the increase in the minority carrier lifetime and the uniform doping of the substrate, the leakage current decreased. As a result, the efficiency of resulting solar cell increased to 17.24%, in contrast to that of the reference cell, which was only 15.89%. Thus, uniform doping and the thermal annealing of the antireflective coating improved solar cell efficiency.

Comparison Of Gettering Ability between I/I Defects And Si Substrate

1996 ◽  
Vol 442 ◽  
Author(s):  
Mitsuhiro Horikawa ◽  
Tomohisa Kitano
Keyword(s):  
Low Dose ◽  
Interstitial Atom ◽  
Minority Carrier ◽  
Diffusion Length ◽  
Si Substrate ◽  
Minority Carrier Diffusion Length ◽  
Carrier Diffusion ◽  
Poly Silicon ◽  
Si Wafer

AbstractA Si wafer is contaminated with 1.5 × 1013 Fe/cm3 and the Fe gettering ability of low dose I/I defects is compared with that of a Si substrate with/without a poly-silicon back seal. Polysilicon has higher gettering ability than I/I defects and prevents Fe from gettering at these defects. When there is no poly-silicon and temperature is as low as 700°C, however, I/I defects act as gettering sites for Fe, even if the dose is as low as 2 × 1013 cm−2. Fe gettering by I/I defects leads to a decrease in minority carrier diffusion length. DLTS measurement reveals that Fe getters at I/I defects in the interstitial atom state.

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