scholarly journals Domain Suppression in the Negative Differential Conductivity Region of Carbon Nanotubes by Applied AC Electric Field

2012 ◽  
Vol 02 (04) ◽  
pp. 274-277 ◽  
Author(s):  
Sulemana S. Abukari ◽  
Samuel Y. Mensah ◽  
Kofi W. Adu ◽  
Natalia G. Mensah ◽  
Kwadwo A. Dompreh ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Electric Field ◽  
Negative Differential Conductivity ◽  
Differential Conductivity ◽  
Ac Electric Field

BALLISTIC ELECTRON ACCELERATION NEGATIVE-DIFFERENTIAL-CONDUCTIVITY DEVICES

2007 ◽  
Vol 17 (01) ◽  
pp. 173-176 ◽  
Author(s):  
BARBAROS ASLAN ◽  
LESTER F. EASTMAN ◽  
WILLIAM J. SCHAFF ◽  
XIAODONG CHEN ◽  
MICHAEL G. SPENCER ◽  
...  
Keyword(s):  
Experimental Data ◽  
Electric Field ◽  
Electron Acceleration ◽  
Negative Differential Conductivity ◽  
Differential Conductivity ◽  
Experimental Development ◽  
Ballistic Electron

We present the experimental development and characterization of GaN ballistic diodes for THz operation. Fabricated devices have been described and gathered experimental data is discussed. The major problem addressed is the domination of the parasitic resistances which significantly reduce the accelerating electric field across the ballistic region (intrinsic layer).

Influence of AC Electric Field on Macroscopic Network of Carbon Nanotubes in Polystyrene

2007 ◽  
Vol 28 (8) ◽  
pp. 1164-1168 ◽  
Author(s):  
Xizhi Yang ◽  
Yuefeng Zhu ◽  
Lijun Ji ◽  
Chan Zhang ◽  
Ji Liang
Keyword(s):  
Carbon Nanotubes ◽  
Electric Field ◽  
Ac Electric Field

Controllable Interconnection of Single-Walled Carbon Nanotubes under AC Electric Field

2005 ◽  
Vol 109 (23) ◽  
pp. 11420-11423 ◽  
Author(s):  
Zhuo Chen ◽  
Yanlian Yang ◽  
Fang Chen ◽  
Quan Qing ◽  
Zhongyun Wu ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Electric Field ◽  
Single Walled Carbon Nanotubes ◽  
Single Walled Carbon ◽  
Ac Electric Field ◽  
Walled Carbon Nanotubes

BALLISTIC ELECTRON ACCELERATION NEGATIVE-DIFFERENTIAL-CONDUCTIVITY DEVICES

2006 ◽  
Vol 16 (02) ◽  
pp. 437-441
Author(s):  
Lester F. Eastman ◽  
William J. Schaff ◽  
Ho-Young Cha ◽  
Xiao-Dong Chen ◽  
Michael G. Spencer ◽  
...  
Keyword(s):  
Electric Field ◽  
Electron Acceleration ◽  
Finite Energy ◽  
High Electric Field ◽  
Negative Differential Conductivity ◽  
Differential Conductivity ◽  
Ballistic Electron ◽  
Drift Conditions ◽  
On Chip

A short drift distance N - I - N device, with high electric field, allows ballistic electron accelerations and drift. Conditions can be enhanced by using a heterojunction to launch electrons at finite energy. Initial I(V) results without the heterojunctions are presented, as well as the design of a structure which has the heterostructure, projected results are speculated upon, along with an on-chip circuit being used.

Effect of an AC electric field on the conductance of single-wall semiconductor-type carbon nanotubes

2010 ◽  
Vol 44 (9) ◽  
pp. 1211-1216 ◽  
Author(s):  
M. B. Belonenko ◽  
S. Yu. Glazov ◽  
N. E. Mescheryakova
Keyword(s):  
Carbon Nanotubes ◽  
Electric Field ◽  
Ac Electric Field ◽  
Semiconductor Type

Macroscopic Networks of Carbon Nanotubes in PMMA Matrix Induced by AC Electric Field

2008 ◽  
Vol 29 (4) ◽  
pp. 502-507 ◽  
Author(s):  
Chen Ma ◽  
Yue‐Feng Zhu ◽  
Xi‐Zhi Yang ◽  
Li‐Jun Ji ◽  
Chan Zhang ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Electric Field ◽  
Pmma Matrix ◽  
Ac Electric Field

scholarly journals Generation of sequences of strong electric monopulses in nitride films

2021 ◽  
Vol 34 (2) ◽  
pp. 187-201
Author(s):  
Volodymyr Grimalsky ◽  
Svetlana Koshevaya ◽  
Jesus Escobedo-Alatorre ◽  
Anatoliy Kotsarenko
Keyword(s):  
Electric Field ◽  
Electric Fields ◽  
Strong Electric Field ◽  
Numerical Algorithms ◽  
Negative Differential Conductivity ◽  
Differential Conductivity ◽  
Threshold Values ◽  
Bias Electric Field ◽  
Bulk Semiconductors ◽  
Strong Electric Fields

This paper presents theoretical investigation of the excitation of the sequences of strong nonlinear monopulses of space charge waves from input small envelope pulses with microwave carrier frequencies due to the negative differential conductivity in n-GaN and n-InN films. The stable numerical algorithms have been used for nonlinear 3D simulations. The sequences of the monopulses of the strong electric field of 3 - 10 ps durations each can be excited. The bias electric field should be chosen slightly higher than the threshold values for observing the negative differential conductivity. The doping levels should be moderate 1016 -1017 cm-3in the films of ? 2 mm thicknesses. The input microwave carrier frequencies of the exciting pulses of small amplitudes are up to 30 GHz in n-GaN films, whereas in n-InN films they are lower, up to 20 GHz. The sequences of the electric monopulses of high peak values are excited both in the uniform nitride films and in films with non-uniform conductivity. These nonlinear monopulses in the films differ from the domains of strong electric fields in the bulk semiconductors. In the films with non-uniform doping the nonlinear pulses are excited due to the inhomogeneity of the electric field near the input end of the film and the output nonlinear pulses are rather domains.

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