Chemical Oxidative Condensation of Benzidine in Non-Aqueous Medium: Synthesis and Investigation of Oligomers and Polymer with Benzidine Diimine Units

The oxidative condensation of benzidine has been carried out in acetic acid media using potassium peroxydisulfate as the oxidizing agent. Using different monomer–oxidant molar ratios, benzidine dimer, trimer, and polymer have been synthesized for the first time. It was established that the polybenzidine structure is composed from a sequence of benzidinediimine and diphenylene units with amino/amino end groups and thus proves the possibility of ammonia elimination during the oxidative polymerization of aromatic diamines. The method seems to be common for the synthesis of polymers with the sequence of aromatic diimine and arylene units. TGA analysis of the obtained trimer and polymer was investigated, and the high thermostability of both the polymer and trimer was revealed. According to the obtained data, both polymer and trimer matrix decomposition started at 300 °C, and at 600 °C, 75.94% and of 69.40% of the initial weight remained, correspondingly. Conductivities of the polymer and trimer show a semiconductor-type change from temperature and after doping show an increase in conductivity up to 10−4 Sm/cm.

Improvement in NO2 Gas Sensing Properties of Semiconductor-Type Sensors by Loading Pt into BiVO4 Nanocomposites at Room Temperature

In the present study, we report the first attempt to prepare a conducive environment for Pt/BiVO4 nanocomposite material reusability for the promotion of sustainable development. Here, the Pt/BiVO4 nanocomposite was prepared using a hydrothermal method with various weight percentages of platinum for use in NO2 gas sensors. The surface morphologies and structure of the Pt/BiVO4 nanocomposite were characterized by scanning electron microscope (SEM), transmission electron microscopy (TEM), energy-dispersive X-ray spectroscopy (EDX), and X-ray diffraction (XRD). The results showed that Pt added to BiVO4 with 3 wt.% Pt/BiVO4 was best at a concentration of 100 ppm NO2, with a response at 167.7, and a response/recovery time of 12/35 s, respectively. The Pt/BiVO4 nanocomposite-based gas sensor exhibits promising nitrogen dioxide gas-sensing characteristics, such as fast response, highly selective detection, and extremely short response/recovery time. Additionally, the mechanisms of gas sensing in Pt/BiVO4 nanocomposites were explored in this paper.

A modeling study on utilizing low temperature sprayed In2S3 as the buffer layer of CuBaSn(S, Se) solar cells

This study represents the investigation of In2S3 thin films as an electron transport layer in the CuBaSn(S, Se)-CBT(S, Se) solar cells, which have been deposited using the Chemical Spray Pyrolysis method. For studying the electrical properties of films such as conduction and valence band, carrier densities, Fermi level, flat band potential, and semiconductor type, the Mott–Schottky analysis has been used. UV–VIS, XRD, and FESEM have been applied to investigate the optical properties of the layers and the layer’s morphologies. The experimental CBT(S, Se) solar cell has been simulated and validated as the next step. After that, the In2S3 layer has been used as the electron transport layer. The results represent that the In2S3 layer is a suitable substitution for toxic CdS. Finally, the In2S3 properties are varied in reasonable ranges, which means different electron transport layers are screened.

The Relationship between Natural Pyrite and Impurity Element Semiconductor Properties: A Case Study of Vein Pyrite from the Zaozigou Gold Deposit in China

Pyrite is a common sulfide mineral in gold deposits, and its unique thermoelectricity has received extensive attention in the field of gold exploration. However, there is still a lack of detailed research and direct evidence about how impurity elements affect mineral semiconductor properties. In this paper, combined with first-principles calculations, laser ablation inductively coupled plasma mass spectrometry (LA-ICP-MS) mapping technology and in situ Seebeck coefficient scanning probe technology were used to study the law of changing semiconductor properties in pyrite containing impurity elements such as As, Co, Ni, and Cu. The results showed that pyrite containing arsenic is a P-type semiconductor, and pyrites containing Ni, Co, Cu, and other elements are N-type semiconductors. When P-type pyrites containing As were supplemented with Ni, Cu, and other elements, the semiconductor type changed to N-type. However, Co addition did not change the semiconductor type of arsenic-rich pyrite. Pyrite formed under different temperature conditions tended to be enriched with different combinations of impurity elements, leading to the relative accumulation of P-type or N-type pyrites.

Holey Graphene: Topological Control of Electronic Properties and Electric Conductivity

This paper studies holey graphene with various neck widths (the smallest distance between two neighbor holes). For the considered structures, the energy gap, the Fermi level, the density of electronic states, and the distribution of the local density of electronic states (LDOS) were found. The electroconductive properties of holey graphene with round holes were calculated depending on the neck width. It was found that, depending on the neck width, holey graphene demonstrated a semiconductor type of conductivity with an energy gap varying in the range of 0.01–0.37 eV. It was also shown that by changing the neck width, it is possible to control the electrical conductivity of holey graphene. The anisotropy of holey graphene electrical conductivity was observed depending on the direction of the current transfer.

Туннельный ток между структурными элементами тонких графен/нанотрубных пленок

Based on the constructed atomistic models of graphene/nanotube films with different numbers of nanotubes in supercells, we carried out in silico studies of the regularities of the nonuniform density distribution, which determine the presence of an island structure in such films. As a result of quantum molecular dynamics modeling, it is found that thin tubes of subnanometer diameter are enveloped in graphene sheets, which makes them energetically stable and stable. We also studied tunneling contacts between individual film fragments that are not covalently bound, in particular, between graphene sheets with different topologies of contacting zigzag and armchair edges, depending on the distance between them, and between tubes of different chiralities, including (6,3), (4,4), (6,5), (12,6) and (16,0). It is found that the tunnel contacts of tubes with a semiconductor type of conductivity are characterized by the presence of voltage intervals with a negative differential resistance in the I – V characteristic. Such voltage intervals are not observed at all for tubes with a metallic character of conductivity. The new knowledge obtained is important for assessing the electrical conductivity of such films, two-thirds of which are semiconductor tubes.