Sputtered Barium Titanate, Lead Zirconate Titanate, Barium Strontium Titanate Films for Capacitor Applications

2000 ◽  
Author(s):  
Bang-Hung Tsao ◽  
Sandra Fries Carr ◽  
Susan Heidger ◽  
Joseph A. Weimer
1998 ◽  
Vol 541 ◽  
Author(s):  
J Robertson ◽  
C W Chen

AbstractSchottky barrier heights of various metals on tantalum pentoxide, barium strontium titanate, lead zirconate-titanate and strontium bismuth tantalate have been calculated as a function of metal work function. These oxides have a dimensionless Schottky barrier pinning factor, S, of 0.28 – 0.4 and not close to 1, because S is controlled by the Ti-O type bonds not Sr-O type bonds, as assumed previously. Band offsets on silicon are asymmetric with much smaller offset at the conduction band, so that Ta2O5 and barium strontium titanate (BST) are relatively poor barriers to electrons on Si.


2005 ◽  
Vol 471 (1-2) ◽  
pp. 71-75 ◽  
Author(s):  
Tomokazu Tanase ◽  
Yoshio Kobayashi ◽  
Toshihide Nabatame ◽  
Takao Miwa ◽  
Mikio Konno

Author(s):  
Kiflom Gebremedhn Kelele ◽  
Aschalew Tadesse ◽  
Tegene Desalegn ◽  
Suresh Ghotekar ◽  
Ruthramurthy Balachandran ◽  
...  

Abstract The ferroelectric barium strontium titanate (Ba1-xSrxTiO3) is a homogeneous solid solution prepared from the mixture of barium titanate (BaTiO3), strontium titanate (SrTiO3) and titanium (IV) isopropoxide. Barium strontium titanate (BST) nanomaterials with improved permittivity and dielectric properties due to their nano-properties have attracted great interest for extensive and versatile applications as super capacitors, dielectrics, ceramics and catalysts. Introduction of metal ion dopants into the parent system of BST significantly alters its structural, morphological, electrical, optical and dielectric characteristics. This review is aimed at addressing synthesis, characterization methods, photocatalytic and electrical applications of metal ions doped BST nanomaterials. The effect of doping BST, through metal ions, on its properties and application with most probable reasons have been thoroughly discussed.


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