Analysis of the temperature-frequency effect on dielectric losses in a grain medium

The aim of the study is to determine the influence of the thermal effect on dielectric losses in grain mass subject to bruising during drying and storage on the example of wheat across a wide external electric field frequency range. The study of the electrophysical characteristics of a dispersed medium comprising mechanically activated wheat grains takes into account the effect of the degree of breakage on the dielectric parameters of the studied medium. The studies were carried out on experimental samples having different degrees of mechanical activation of particles, which ranged in size from from 50 to 1000 μm. Variations in the dielectric loss tangent were studied using the dielectric method across a wide temperature-frequency range. Studies of variations in dielectric properties were carried out for wheat sam-ples subjected to grinding according to the mechanical activation method at temperatures varying from 20°C to 255°C with a constant heating rate of 0.7 deg / min. During the course of the experiment, the frequency of the external electric field was varied from 25 Hz to 1∙106 Hz. Dielectric constant and dielectric loss tangent calculations were carried out using data on electrical capacity and conductivity obtained using an E7-20 immittance meter and a measuring cell in the form of a flat capacitor. An analysis of variations in these dielectric characteristics was also performed. The obtained stable correlation of the dielectric loss tangent with the frequency of external electric impact and the degree of heating of the samples was most pronounced for finely dispersed samples (particle size 50 μm). Variations in dielectric characteristics are most significant when the frequency decreases to 100 Hz and below. The study of variations in the main dielectric parameters can be used to prevent self-heating and ignition of the grain mass during storage, as well as for selecting the most efficient energy-saving drying mode.

Structural and Dielectric Progression of 5 % Gd Doped BiFeO3 Nanoparticles Through Cr (2-8%) Doping

This study reports the structural modifications in undoped multiferroic BiFeO3 (bismuth ferrite or BFO) nanoparticles caused by doping at both the A-site (by 5% Gd) and B-site (by 2-8% Cr) and the resulting improvements in dielectric characteristics. Both un-doped and doped BFO nanoparticles were synthesized using the sol-gel technique and annealed at 600°C for crystallization. X-ray diffractometry (XRD) reveals a phase transition from rhombic (R3c) to orthorhombic (Pn21a). Field Emission Scanning Electron Microscopy (FESEM) study shows the production of nanoparticles with sizes ranging from 80 to 130 nm. Impedance analyzer experiments (100 Hz-10 MHz) show that the dielectric characteristics of doubly doped BFO are very stable over a wide frequency range. The dielectric permittivity of co-doped BFO decreases with Cr doping concentration up to x = 0.06 before reversing. The conductivity drops dramatically as the Cr content rises. Journal of Engineering Science 12(3), 2021, 101-110

Dielectric and Electric Properties of Ba0.996La0.004Ti0.999O3 Ceramics Doped with Europium and Hafnium Ions

Lanthanum-modified BaTiO3 electroceramic materials have superior dielectric and piezoelectric properties. Ba0.996La0.004Ti0.999O3 (BLT4) seems to be a serious candidate for ultracondensator applications. This manuscript describes the results of hafnium and europium modification of BLT 4 ceramics. The pure and doped ceramic materials were synthesized by the conventional mixed oxide method. The microstructure of obtained samples was examined by scanning electron microscope. The investigations reveal strong correlations between the presence of admixture and the grain size, which was especially visible in the case of the hafnium dopant. The frequency and temperature dielectric characteristics measurements revealed a decrease in electric permittivity. Moreover, the impedance spectroscopy investigations showed severe changes in grains and grain-boundary resistivity, which was connected with changes in electric conductivity.

Enhanced Piezoresponse and Dielectric Properties for Ba1-XSrXTiO3 Composition Ultrathin Films by the High-Throughput Method

The stacked single-unit cell Ba1-xSrxTiO3 (BSTO) thin film designed by the high-throughput method is fabricated by layer-by-layer deposition by laser molecular beam epitaxy, and its ferroelectric and dielectric characteristics as a function of Sr concentration are comprehensively investigated. The permittivity of BSTO exhibits a monotonous increase by Sr with a plateau in the region of 14% < Sr < 85%. Meanwhile, at the low Sr doping regime, the piezoelectric response has been discovered, and the maximum piezoresponse and d33 can reach approximately 139.05 pm and 88 pm/V once an appropriate Ba/Sr ratio is formed, exhibiting a coexistence of a dielectric property and giant piezoresponse. This effective piezoelectric constant d33 value is significantly larger than the conventional chemical doping scenarios, suggesting that the intra-plane interaction is crucial for designing future promising dielectric and ferroelectric thin films via high-throughput technologies.