scholarly journals Effects of Deposition Temperature and Annealing Process on PZT Thin Films Prepared by Pulsed Laser Deposition

2002 ◽  
Vol 3 (1) ◽  
pp. 14-17
Author(s):  
Min-Chul Kim ◽  
Ji-Won Choi ◽  
Chong-Yun Kang ◽  
Seok-Jin Yoon ◽  
Hyun-Jai Kim ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Deposition Temperature ◽  
Pulsed Laser ◽  
Annealing Process ◽  
Laser Deposition ◽  
Pzt Thin Films

Highly Conductive and Optically Transparent Polycrystalline Iridium Oxide Thin Films Grown by Reactive Pulsed Laser Deposition

1997 ◽  
Vol 472 ◽  
Author(s):  
M.A. El Khakani ◽  
M. Chaker
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Deposition Temperature ◽  
Room Temperature ◽  
Optical Transmission ◽  
Ambient Pressure ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Structure Morphology ◽  
Quartz Substrates

ABSTRACTReactive pulsed laser deposition has been used to deposit IrO2 thin films on both SiO2 and fused quartz substrates, by ablating a metal iridium target in oxygen atmosphere. At a KrF laser intensity of about 1.7 × 109 W/cm2, IrO2 films were deposited at substrate deposition temperatures ranging from room-temperature to 700 °C under an optimum oxygen ambient pressure of 200 mTorr. The structure, morphology, electrical resistivity and optical transmission of the deposited films were characterized as a function of their deposition temperature (Td). High quality IrO2 films are obtained in the 400–600 °C deposition temperature range. They are polycrystalline with preferred orientations, depending on the substrate, and show a dense granular morphology. At a Td as low as 400 °C, highly conductive IrO2 films with room-temperature resistivities as low as (42±6) μΩ cm are obtained. Over the 300–600 °C Td range, the IrO2 films were found to exhibit a maximum optical transmission at 450 °C (∼ 45 % at 500 nm for 80 nm-thick films).

Epitaxial piezoelectric PZT thin films obtained by pulsed laser deposition

1998 ◽  
Vol 318 (1-2) ◽  
pp. 265-269 ◽  
Author(s):  
P. Verardi ◽  
F. Craciun ◽  
M. Dinescu ◽  
C. Gerardi
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Pzt Thin Films

Preparation and characterization of PZT thin films deposited by pulsed laser deposition on template layer

2004 ◽  
Vol 24 (6) ◽  
pp. 1629-1632 ◽  
Author(s):  
Z.J. Wang ◽  
H.Y. Bi ◽  
H. Kokawa ◽  
L. Zhang ◽  
J. Tsaur ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Pzt Thin Films

Pulsed laser deposition of crystalline PZT thin films

1997 ◽  
Vol 97 (1-3) ◽  
pp. 420-425 ◽  
Author(s):  
A. Husmann ◽  
D.A. Wesner ◽  
J. Schmidt ◽  
T. Klotzbücher ◽  
M. Mergens ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Pzt Thin Films

scholarly journals Nanostructured LaFeO3 /Si Thin Films Grown by Pulsed Laser Deposition

2021 ◽  
Author(s):  
Mateusz Jędrusik ◽  
Christian Turquat ◽  
Łukasz Cieniek ◽  
Agnieszka Kopia ◽  
Christine Leroux
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Deposition Temperature ◽  
Oxygen Vacancies ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Chemical Formula ◽  
Iron Deficient ◽  
Exposed Facets

The orthorhombic LaFeO3 thin films grown by pulsed laser deposition on silicon showed nano-structuration of their surface and preferential crystallographic exposed facets, depending on the deposition temperature. The LaFeO3 film deposited at 850°C has two types of grain termination, flat or tip-like, corresponding to two different growth directions, respectively [110] and [200]. Due to the shape of the termination, the same {110} facets are exposed. The LaFeO3 is iron deficient and consequently contains oxygen vacancies, the exact chemical formula being LaFe0.82O3-delta.

Sign in / Sign up

Export Citation Format

Share Document