scholarly journals Nanostructured LaFeO3 /Si Thin Films Grown by Pulsed Laser Deposition

2021 ◽  
Author(s):  
Mateusz Jędrusik ◽  
Christian Turquat ◽  
Łukasz Cieniek ◽  
Agnieszka Kopia ◽  
Christine Leroux
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Deposition Temperature ◽  
Oxygen Vacancies ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Chemical Formula ◽  
Iron Deficient ◽  
Exposed Facets

The orthorhombic LaFeO3 thin films grown by pulsed laser deposition on silicon showed nano-structuration of their surface and preferential crystallographic exposed facets, depending on the deposition temperature. The LaFeO3 film deposited at 850°C has two types of grain termination, flat or tip-like, corresponding to two different growth directions, respectively [110] and [200]. Due to the shape of the termination, the same {110} facets are exposed. The LaFeO3 is iron deficient and consequently contains oxygen vacancies, the exact chemical formula being LaFe0.82O3-delta.

Highly Conductive and Optically Transparent Polycrystalline Iridium Oxide Thin Films Grown by Reactive Pulsed Laser Deposition

1997 ◽  
Vol 472 ◽  
Author(s):  
M.A. El Khakani ◽  
M. Chaker
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Deposition Temperature ◽  
Room Temperature ◽  
Optical Transmission ◽  
Ambient Pressure ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Structure Morphology ◽  
Quartz Substrates

ABSTRACTReactive pulsed laser deposition has been used to deposit IrO2 thin films on both SiO2 and fused quartz substrates, by ablating a metal iridium target in oxygen atmosphere. At a KrF laser intensity of about 1.7 × 109 W/cm2, IrO2 films were deposited at substrate deposition temperatures ranging from room-temperature to 700 °C under an optimum oxygen ambient pressure of 200 mTorr. The structure, morphology, electrical resistivity and optical transmission of the deposited films were characterized as a function of their deposition temperature (Td). High quality IrO2 films are obtained in the 400–600 °C deposition temperature range. They are polycrystalline with preferred orientations, depending on the substrate, and show a dense granular morphology. At a Td as low as 400 °C, highly conductive IrO2 films with room-temperature resistivities as low as (42±6) μΩ cm are obtained. Over the 300–600 °C Td range, the IrO2 films were found to exhibit a maximum optical transmission at 450 °C (∼ 45 % at 500 nm for 80 nm-thick films).

scholarly journals Effects of Deposition Temperature and Annealing Process on PZT Thin Films Prepared by Pulsed Laser Deposition

2002 ◽  
Vol 3 (1) ◽  
pp. 14-17
Author(s):  
Min-Chul Kim ◽  
Ji-Won Choi ◽  
Chong-Yun Kang ◽  
Seok-Jin Yoon ◽  
Hyun-Jai Kim ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Deposition Temperature ◽  
Pulsed Laser ◽  
Annealing Process ◽  
Laser Deposition ◽  
Pzt Thin Films

High-Temperature Ferromagnetism of Zn1-xMnxOy Thin Films Synthesized by Pulsed Laser Deposition

2020 ◽  
Vol 989 ◽  
pp. 215-220
Author(s):  
A.S. Kuz'mina ◽  
M.P. Kuz'min
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Pulsed Laser Deposition ◽  
Oxygen Vacancies ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Ferromagnetic Behavior ◽  
Synthesis Conditions ◽  
Semiconductor Matrix ◽  
Crystallite Sizes

The paper discusses the findings of the study of the structural and magnetic properties of Zn1-xMnxOy thin films (x = 0-0.08), synthesized by pulsed laser deposition under different conditions. It has been discovered that during the doping, thin films remain single-phased and retain wurtzite structure (ZnO wurz), oriented along the direction (001). It has been determined that thin films obtained under the same synthesis conditions have similar crystallite sizes, which is confirmed by the substitution of Mn2+ ions with Zn2+ ions in the Zn O semiconductor matrix. It has been found that annealing of samples in the oxygen atmosphere increases the surface roughness from 1-3 nm to ~ 10 nm; the higher the concentration of manganese in Zn1-xMnxOy films is, the greater the value of Ra. It has been demonstrated that, at room temperature, all Zn1-xMnxOy thin films (x = 0-0.08) exhibit ferromagnetic behavior, which is more pronounced upon the increase in concentration of oxygen vacancies and manganese in the samples. It is assumed that two mechanisms explaining high-temperature ferromagnetism coexist in the films: the first one is determined by ferromagnetic exchange between Mn2+ cations by means of oxygen vacancies, the second one deals with super-exchange interaction between oxygen vacancies.

Pulsed laser deposition temperature effects on strontium-substituted hydroxyapatite thin films for biomedical implants

2020 ◽  
Vol 36 (6) ◽  
pp. 537-551 ◽  
Author(s):  
Angela De Bonis ◽  
Vuk Uskoković ◽  
Katia Barbaro ◽  
Inna Fadeeva ◽  
Mariangela Curcio ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Temperature Effects ◽  
Deposition Temperature ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Biomedical Implants
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