scholarly journals INVESTIGATION OF THE CARRIER LIFETIME IN NEUTRON-DOPED SILICON DEPENDING ON THE CONCENTRATION OF THE INITIAL BORON

2020 ◽  
Vol 4 (4) ◽  
pp. 57-61
Author(s):  
Jakhongir Zokirzhanovich Mirzaraimov ◽  
◽  
Sherzod Akhmadovich Makhmudov
Keyword(s):  
Relaxation Process ◽  
Carrier Lifetime ◽  
Monocrystalline Silicon ◽  
Charge Carriers ◽  
Initial Concentration ◽  
Doped Silicon ◽  
Adhesion Level

The dependence of the lifetime of charge carriers ()in monocrystalline silicon on the concentration of light copper and post-diffusion cooling is discussed. The results obtained are explained by the redistribution of non-basic carriers at the adhesion level. In the compensated “p-Si” and the control “p-Si”, the relaxation process occurs in different wasy   98s for “p-Si”, and   5s for “p-Si”.At the same time ,with the growth of te initial concentration of charge carriers (in this case boron-B ) in the compensated silicon, an increase (with equal values ) is observed, which is due to a different degree of micro –uniformity in conductivity in the studied samples.

scholarly journals Origin of long lifetime of band-edge charge carriers in organic–inorganic lead iodide perovskites

2017 ◽  
Vol 114 (29) ◽  
pp. 7519-7524 ◽  
Author(s):  
Tianran Chen ◽  
Wei-Liang Chen ◽  
Benjamin J. Foley ◽  
Jooseop Lee ◽  
Jacob P. C. Ruff ◽  
...  
Keyword(s):  
High Performance ◽  
Carrier Lifetime ◽  
Charge Carriers ◽  
Band Edge ◽  
Lead Iodide ◽  
Solar Cell Performance ◽  
Photovoltaic Materials ◽  
Wide Range ◽  
Long Lifetime ◽  
Photon Recycling

Long carrier lifetime is what makes hybrid organic–inorganic perovskites high-performance photovoltaic materials. Several microscopic mechanisms behind the unusually long carrier lifetime have been proposed, such as formation of large polarons, Rashba effect, ferroelectric domains, and photon recycling. Here, we show that the screening of band-edge charge carriers by rotation of organic cation molecules can be a major contribution to the prolonged carrier lifetime. Our results reveal that the band-edge carrier lifetime increases when the system enters from a phase with lower rotational entropy to another phase with higher entropy. These results imply that the recombination of the photoexcited electrons and holes is suppressed by the screening, leading to the formation of polarons and thereby extending the lifetime. Thus, searching for organic–inorganic perovskites with high rotational entropy over a wide range of temperature may be a key to achieve superior solar cell performance.

Low temperature frequency dependence of the electron spin resonance absorption in heavily phosphorus-doped silicon

1970 ◽  
Vol 48 (24) ◽  
pp. 2930-2936 ◽  
Author(s):  
F. T. Hedgcock ◽  
T. W. Raudorf
Keyword(s):  
Electron Spin Resonance ◽  
Electron Spin ◽  
Magnetic Moments ◽  
Charge Carriers ◽  
Mobile Charge ◽  
Local Moments ◽  
Spin Resonance ◽  
Doped Silicon ◽  
Pauli Paramagnetism ◽  
Phosphorus Doped

Electron spin resonance (ESR) measurements have been made on a phosphorus-doped silicon specimen (n = 1.38 × 1019/cc) in the liquid helium temperature range. A single line with a g factor of approximately 2 was observed for resonant magnetic fields of 540, 3230, and 12 590 G at 1517, 9010, and 35 200 MHz respectively. The experimentally determined magnetization is compared with the magnetizations expected from the following sources: (a) un-ionized charge carriers or local magnetic moments obeying a Curie law, (b) mobile carriers experiencing an exchange interaction with local magnetic moments, and (c) mobile charge carriers showing only Pauli paramagnetism. The magnetization derived from the ESR data exhibits a linear dependence with magnetic field and no temperature dependence. This is consistent with the Pauli paramagnetism expected for mobile charge carriers in the absence of any interaction with local moments.

Resistivity and carrier lifetime in gold-doped silicon

1973 ◽  
Author(s):  
W Robert Thurber ◽  
David C Lewis ◽  
W Murray Bullis
Keyword(s):  
Carrier Lifetime ◽  
Doped Silicon

Using Bulk Heterojunction Field Effect Measurements to Understand Charge Transport in Solar Cell Materials

2010 ◽  
Vol 1270 ◽  
Author(s):  
Christopher Lombardo ◽  
Ananth Dodabalapur
Keyword(s):  
Recombination Rate ◽  
Carrier Lifetime ◽  
Bulk Heterojunction ◽  
Acid Methyl Ester ◽  
Device Fabrication ◽  
Charge Carriers ◽  
Organic Photovoltaic ◽  
Organic Thin Film ◽  
Photovoltaic Devices ◽  
Organic Photovoltaic Devices

AbstractAmbipolar organic thin-film transistors (OTFTs) have been used to study the transport of charge carriers in bulk heterojunction (BHJ) organic photovoltaic devices. Active layers of phase separated blend of poly(3-hexylthiophene) (P3HT) and [6,6]-phenyl C61-butyric acid methyl ester (PCBM), have been chosen due to their use in performance BHJ organic photovoltaic devices as well as ease of device fabrication. A method for determining recombination rate after exciton dissociation and measurement of excess carrier lifetime has been reported by studying drain current behavior which yields carrier mobility, conductivity, and carrier concentration both in dark and AM1.5g illumination. Channel-length dependent measurements of the photocurrent show that significant recombination of separated charge carriers begins to occur at lengths greater than 10 μm. A recombination rate of cm-3 s-1 and a carrier lifetime of ≥ 8.8 ms has been calculated.

Migration of excited charge carriers in arrays of phosphorus-doped silicon nanocrystals

2010 ◽  
Vol 44 (11) ◽  
pp. 1418-1421 ◽  
Author(s):  
V. A. Belyakov ◽  
A. A. Konakov ◽  
V. A. Burdov
Keyword(s):  
Silicon Nanocrystals ◽  
Charge Carriers ◽  
Doped Silicon ◽  
Phosphorus Doped
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