scholarly journals Effect of Growth Cycles on the Luminescence Properties of InP/InGaP Quantum Structures Grown Using Migration-Enhanced Epitaxy

2019 ◽  
Vol 28 (5) ◽  
pp. 173-176 ◽  
Author(s):  
Il-Wook Cho ◽  
Mee-Yi Ryu ◽  
Jin Dong Song
Keyword(s):  
Luminescence Properties ◽  
Quantum Structures ◽  
Growth Cycles ◽  
Migration Enhanced Epitaxy

Correlations between the Growth Modes and Luminescence Properties of AlGaN Quantum Structures

2008 ◽  
Vol 47 (3) ◽  
pp. 1556-1558 ◽  
Author(s):  
Sergey A. Nikishin ◽  
Boris A. Borisov ◽  
Vladimir V. Kuryatkov ◽  
Mark Holtz ◽  
Gregory A. Garrett ◽  
...  
Keyword(s):  
Luminescence Properties ◽  
Quantum Structures ◽  
Growth Modes

High-power 745-nm Laser Diode Utilizing InP/InGaP Quantum Structures Grown by Using Migration Enhanced Epitaxy

2011 ◽  
Vol 59 (5) ◽  
pp. 3089-3092 ◽  
Author(s):  
S. K. Ha ◽  
J. D. Song ◽  
I. K. Han ◽  
D. Y. Ko ◽  
S. Y. Kim ◽  
...  
Keyword(s):  
Laser Diode ◽  
High Power ◽  
Quantum Structures ◽  
Migration Enhanced Epitaxy

Effect of an InGaP spacer layer on the luminescence properties of InP/InGaP quantum structures

2015 ◽  
Vol 66 (5) ◽  
pp. 811-815 ◽  
Author(s):  
Hye Ryoung Byun ◽  
Mee-Yi Ryu ◽  
Jin Dong Song ◽  
Chang-Lyoul Lee
Keyword(s):  
Luminescence Properties ◽  
Quantum Structures ◽  
Spacer Layer

CdSe/ZnSe quantum structures grown by migration enhanced epitaxy: Structural and optical investigations

1997 ◽  
Vol 71 (11) ◽  
pp. 1510-1512 ◽  
Author(s):  
K. Leonardi ◽  
H. Heinke ◽  
K. Ohkawa ◽  
D. Hommel ◽  
H. Selke ◽  
...  
Keyword(s):  
Quantum Structures ◽  
Migration Enhanced Epitaxy

On the MOVPE growth and luminescence properties of GaAs-AlGaAs core-multishell nanowire quantum structures

2015 ◽  
Author(s):  
Paola Prete ◽  
Roberta Rosato ◽  
Elena Stevanato ◽  
Fabio Marzo ◽  
Nico Lovergine
Keyword(s):  
Luminescence Properties ◽  
Quantum Structures ◽  
Movpe Growth

Luminescence from individual dislocations in II-VI and III-V semiconductors

1991 ◽  
Vol 49 ◽  
pp. 834-835
Author(s):  
J W Steeds
Keyword(s):  
Group Iv ◽  
Luminescence Properties ◽  
Carrier Recombination ◽  
Transmission Electron ◽  
Wide Range ◽  
Basic Physics ◽  
Semiconducting Compounds ◽  
Diamond Group ◽  
Non Destructive ◽  
Technological Significance

There is a wide range of experimental results related to dislocations in diamond, group IV, II-VI, III-V semiconducting compounds, but few of these come from isolated, well-characterized individual dislocations. We are here concerned with only those results obtained in a transmission electron microscope so that the dislocations responsible were individually imaged. The luminescence properties of the dislocations were studied by cathodoluminescence performed at low temperatures (~30K) achieved by liquid helium cooling. Both spectra and monochromatic cathodoluminescence images have been obtained, in some cases as a function of temperature.There are two aspects of this work. One is mainly of technological significance. By understanding the luminescence properties of dislocations in epitaxial structures, future non-destructive evaluation will be enhanced. The second aim is to arrive at a good detailed understanding of the basic physics associated with carrier recombination near dislocations as revealed by local luminescence properties.

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