scholarly journals Monte Carlo Study on Atomic Ordering and Clustering in III-V Semiconductor Alloys during the Epitaxial Growth.

1996 ◽  
Vol 38 (6) ◽  
pp. 389-395
Author(s):  
Manabu ISHIMARU ◽  
Syo MATSUMURA ◽  
Noriyuki KUWANO ◽  
Kensuke OKI
Keyword(s):  
Monte Carlo ◽  
Epitaxial Growth ◽  
Monte Carlo Study ◽  
Semiconductor Alloys ◽  
Atomic Ordering

Theoretical Monte Carlo Study of the Formation and Evolution of Defects in the Homoepitaxial Growth of SiC

2008 ◽  
Vol 600-603 ◽  
pp. 135-138 ◽  
Author(s):  
Massimo Camarda ◽  
Antonino La Magna ◽  
Patrick Fiorenza ◽  
Gaetano Izzo ◽  
Francesco La Via
Keyword(s):  
Growth Rate ◽  
Monte Carlo ◽  
Kinetic Model ◽  
Epitaxial Growth ◽  
Defect Formation ◽  
Monte Carlo Study ◽  
Optical Characterization ◽  
Extended Defects ◽  
Homoepitaxial Growth ◽  
Formation And Evolution

A novel Monte Carlo kinetic model has been developed and implemented to predict growth rate regimes and defect formation for the homo-epitaxial growth of various SiC polytypes on different substrates. Using this model we have studied the generation of both point like and extended defects in terms of the growth rate and off-cut angle, finding qualitative agreement with both electrical and optical characterization and analytical results.

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