scholarly journals VALENCE BAND OFFSET IN PSEUDOMORPHIC Si/Ge0.25Si0.75/Si SINGLE QUANTUM WELL MEASURED BY DEEP LEVEL TRANSIENT SPECTROSCOPY

1993 ◽  
Vol 42 (7) ◽  
pp. 1153
Author(s):  
LI XIAN-HUANG ◽  
LU FANG ◽  
SUN HENG-HUI
2004 ◽  
Vol 19 (7) ◽  
pp. 897-901 ◽  
Author(s):  
K Zdansky ◽  
V Gorodynskyy ◽  
J Kosíková ◽  
A Rudra ◽  
E Kapon ◽  
...  

2016 ◽  
Vol 27 (7) ◽  
pp. 075705 ◽  
Author(s):  
Victor-Tapio Rangel-Kuoppa ◽  
Alexander Tonkikh ◽  
Nikolay Zakharov ◽  
Christian Eisenschmidt ◽  
Peter Werner

1989 ◽  
Vol 160 ◽  
Author(s):  
X. Yin ◽  
Fred H. Pollak ◽  
B.T. McDermott ◽  
K.G. Reid ◽  
S.M. Bedair

AbstractWe have studied the photoreflectance spectrum at 300K from a GaAs/In0.5 Ga0.5p (ordered) single quantum well fabricated by atomic layer epitaxy. Comparison of the energies of the observed intersubband and barrier transitions with an envelope function model calculation yields a valence band offset of 350 ± 20 meV.


1995 ◽  
Vol 77 (9) ◽  
pp. 4541-4543 ◽  
Author(s):  
C. N. Yeh ◽  
L. E. McNeil ◽  
L. J. Blue ◽  
T. Daniels‐Race

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