scholarly journals Determination of the valence band offset of Si/Si0.7Ge0.3/Si quantum wells using deep level transient spectroscopy

1993 ◽  
Vol 73 (11) ◽  
pp. 7427-7430 ◽  
Author(s):  
L. Vescan ◽  
R. Apetz ◽  
H. Lüth
Keyword(s):  
Quantum Wells ◽  
Valence Band ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Band Offset ◽  
Valence Band Offset ◽  
Transient Spectroscopy

Valence band offset at the Si/SiSn interface by applying deep level transient spectroscopy

2016 ◽  
Vol 27 (7) ◽  
pp. 075705 ◽  
Author(s):  
Victor-Tapio Rangel-Kuoppa ◽  
Alexander Tonkikh ◽  
Nikolay Zakharov ◽  
Christian Eisenschmidt ◽  
Peter Werner
Keyword(s):  
Valence Band ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Band Offset ◽  
Valence Band Offset ◽  
Transient Spectroscopy

Determination of the valence-band offset of GaAs-(Ga,In)P quantum wells by photoreflectance spectroscopy

1992 ◽  
Vol 46 (3) ◽  
pp. 1886-1888 ◽  
Author(s):  
Gérald Arnaud ◽  
Philippe Boring ◽  
Bernard Gil ◽  
Jean-Charles Garcia ◽  
Jean-Pierre Landesman ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Valence Band ◽  
Band Offset ◽  
Valence Band Offset ◽  
Photoreflectance Spectroscopy

Determination of the valence band offset of MOVPE-grownIn0.48Ga0.52P∕GaAsmultiple quantum wells by admittance spectroscopy

2008 ◽  
Vol 77 (12) ◽  
Author(s):  
Carlo Ghezzi ◽  
Renato Magnanini ◽  
Antonella Parisini ◽  
Luciano Tarricone ◽  
Enos Gombia ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Valence Band ◽  
Band Offset ◽  
Admittance Spectroscopy ◽  
Valence Band Offset

Transport Properties and Conduction Band Offset of n-ZnO/n-6H-SiC Heterostructures

2006 ◽  
Vol 957 ◽  
Author(s):  
Yahya Alivov ◽  
Xiao Bo ◽  
Fan Qian ◽  
Daniel Johnstone ◽  
Cole Litton ◽  
...  
Keyword(s):  
Conduction Band ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Band Offset ◽  
Measured Temperature ◽  
Temperature Dependent ◽  
Conduction Band Offset ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Transient Spectroscopy

ABSTRACTThe conduction band offset of n-ZnO/n-6H-SiC heterostructures fabricated by rf-sputtered ZnO on commercial n-type 6H-SiC substrates has been measured. Temperature dependent current-voltage characteristics, photocapacitance, and deep level transient spectroscopy measurements showed the conduction band offsets to be 1.25 eV, 1.1 eV, and 1.22 eV, respectively.

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