Characterization of Polycapillary Optics Installed in an Analytical Electron Microscope

Few electron optical inventions have revolutionized the TEM/ STEM as profoundly as the spherical aberration (Cs) corrector has. Characterization of technologically important materials increasingly needs to be done at the atomic or even sub-atomic level. This characterization includes determination of atomic structure as well as structural chemistry. With Cs correctors, the sub-Angstrom imaging barrier has been passed, and fast atomic scale spectroscopy is possible. In addition to improvements in resolution, Cs correctors offer a number of other significant improvements and benefits.

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X-Ray Transmission Characteristic Measurements of Polycapillary Optics Installed in an Analytical Electron Microscope

IEEE Transactions on Nuclear Science ◽

10.1109/tns.2015.2453011 ◽

2015 ◽

Vol 62 (4) ◽

pp. 1918-1922 ◽

Cited By ~ 3

Author(s):

Akira Takano ◽

Keisuke Maehata ◽

Naoko Iyomoto ◽

Toru Hara ◽

Kazuhisa Mitsuda ◽

...

Keyword(s):

Electron Microscope ◽

Transmission Characteristic ◽

Polycapillary Optics ◽

X Ray ◽

Analytical Electron ◽

Analytical Electron Microscope

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Aem analysis of defects in processed Si wafers

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100126093 ◽

1987 ◽

Vol 45 ◽

pp. 238-239

Author(s):

Nathan Lewis ◽

Ernest L. Hall ◽

Robert N. Hall

Keyword(s):

Electron Microscope ◽

Electrical Properties ◽

Detrimental Effect ◽

Semiconductor Materials ◽

Processing Step ◽

Analytical Electron ◽

Analytical Electron Microscope ◽

Initial Processing ◽

Common Defect

The analytical electron microscope is particularly well suited for the characterization of many types of defects observed in semiconductor materials. One type of common defect which has been shown to occur in some devices is an electrically-active rod defect which has a detrimental effect on some properties. In the present AEM investigation Si devices which exhibited a significant degradation in certain electrical properties (excess junction leakage) were examined in order to ascertain the cause of this phenomenon.The starting material in the process was n-type (100) silicon wafers. The initial processing step was the growth of 200nm of LPCVD SiO2. During the processing sequences wafers were subjected to temperatures up to 900°C.

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Quantitative characterization of the composition, thickness and orientation of thin films in the analytical electron microscope

Thin Solid Films ◽

10.1016/s0040-6090(02)00906-9 ◽

2003 ◽

Vol 424 (1) ◽

pp. 50-55 ◽

Cited By ~ 5

Author(s):

D.B. Williams ◽

M. Watanabe ◽

A.J. Papworth ◽

J.C. Li

Keyword(s):

Thin Films ◽

Electron Microscope ◽

Quantitative Characterization ◽

Analytical Electron ◽

Analytical Electron Microscope

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Diagnosis of Silica Induced Granulomatous Hypersensitivity

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100054303 ◽

1982 ◽

Vol 40 ◽

pp. 336-337

Author(s):

C. W. Mehard ◽

W. L. Epstein

Keyword(s):

Electron Microscope ◽

White Female ◽

X Rays ◽

Blood Tests ◽

Analytical Electron ◽

Analytical Electron Microscope

The underlying cause of a disease may not he readily apparent but may have a long history in development. We report one such case which was diagnosed with the aid of the analytical electron microscope.The patient, a 48 yr. old white female, developed a tender nodule on the sole of her foot in December, 1981. Subsequently additional lesions developed on the same foot resulting in deep pain and tenderness. Superficial lesions also extended up to the knee on both legs. No abnormalities were revealed in blood tests or chest X-rays.

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Application of analytical electron microscopy to the study of partitioning of silicon in a 2 wt% Si eutectoid steel

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100110222 ◽

1978 ◽

Vol 36 (1) ◽

pp. 616-617

Author(s):

N. Ridley ◽

S.A. Al-Salman ◽

G.W. Lorimer

Keyword(s):

Electron Microscopy ◽

Electron Microscope ◽

Analytical Electron Microscopy ◽

Eutectoid Steel ◽

Minimum Diameter ◽

Thin Foils ◽

Analytical Electron ◽

Analytical Electron Microscope ◽

Transformation Front

The application of the technique of analytical electron microscopy to the study of partitioning of Mn (1) and Cr (2) during the austenite-pearlite transformation in eutectoid steels has been described in previous papers. In both of these investigations, ‘in-situ’ analyses of individual cementite and ferrite plates in thin foils showed that the alloying elements partitioned preferentially to cementite at the transformation front at higher reaction temperatures. At lower temperatures partitioning did not occur and it was possible to identify a ‘no-partition’ temperature for each of the steels examined.In the present work partitioning during the pearlite transformation has been studied in a eutectoid steel containing 1.95 wt% Si. Measurements of pearlite interlamellar spacings showed, however, that except at the highest reaction temperatures the spacing would be too small to make the in-situ analysis of individual cementite plates possible, without interference from adjacent ferrite lamellae. The minimum diameter of the analysis probe on the instrument used, an EMMA-4 analytical electron microscope, was approximately 100 nm.

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point-Analysis Using the Extrapolation Method in the Analytical Electron microscope

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100135757 ◽

1990 ◽

Vol 48 (2) ◽

pp. 430-431

Author(s):

Zenji Horita ◽

Ryuzo Nishimachi ◽

Takeshi Sano ◽

Minoru Nemoto

Keyword(s):

Electron Microscope ◽

Extrapolation Method ◽

X Ray ◽

Absorption Correction ◽

Point Analysis ◽

Analytical Electron ◽

Analytical Electron Microscope ◽

Data Points ◽

Identical Composition ◽

X Ray Absorption

Absorption correction is often required in quantitative x-ray microanalysis of thin specimens using the analytical electron microscope. For such correction, it is convenient to use the extrapolation method[l] because the thickness, density and mass absorption coefficient are not necessary in the method. The characteristic x-ray intensities measured for the analysis are only requirement for the absorption correction. However, to achieve extrapolation, it is imperative to obtain data points more than two at different thicknesses in the identical composition. Thus, the method encounters difficulty in analyzing a region equivalent to beam size or the specimen with uniform thickness. The purpose of this study is to modify the method so that extrapolation becomes feasible in such limited conditions. Applicability of the new form is examined by using a standard sample and then it is applied to quantification of phases in a Ni-Al-W ternary alloy.The earlier equation for the extrapolation method was formulated based on the facts that the magnitude of x-ray absorption increases with increasing thickness and that the intensity of a characteristic x-ray exhibiting negligible absorption in the specimen is used as a measure of thickness.

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