High-speed solar-blind UV photodetectors using high-Al content Al0.64Ga0.36N/Al0.34Ga0.66N multiple quantum wells

2016 ◽  
Vol 10 (1) ◽  
pp. 011004 ◽  
Author(s):  
Sakib Muhtadi ◽  
Seong Mo Hwang ◽  
Antwon L. Coleman ◽  
Alexander Lunev ◽  
Fatima Asif ◽  
...  
Keyword(s):  
Quantum Wells ◽  
High Speed ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Uv Photodetectors ◽  
Al Content ◽  
Solar Blind ◽  
High Al Content

Emission Mechanism of High Al-content AlGaN Multiple Quantum Wells

2016 ◽  
Vol 37 (5) ◽  
pp. 513-518
Author(s):  
李金钗 LI Jin-chai ◽  
季桂林 JI Gui-lin ◽  
杨伟煌 YANG Wei-huang ◽  
金 鹏 JIN Peng ◽  
陈航洋 CHEN Hang-yang ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Emission Mechanism ◽  
Al Content ◽  
High Al Content

High-speed joint-transform optical image correlator using GaAs/AlGaAs semi-insulating multiple quantum wells and diode lasers

1993 ◽  
Vol 18 (11) ◽  
pp. 906 ◽  
Author(s):  
A. Partovi ◽  
T. H. Chiu ◽  
D. T. H. Liu ◽  
A. M. Glass
Keyword(s):  
Quantum Wells ◽  
High Speed ◽  
Diode Lasers ◽  
Optical Image ◽  
Multiple Quantum Wells ◽  
Multiple Quantum

High-Speed Carrier-Injection-Based Polarization Controller With InGaAlAs/InAlAs Multiple-Quantum Wells

2017 ◽  
Vol 29 (22) ◽  
pp. 1951-1954 ◽  
Author(s):  
Mohiyuddin Kazi ◽  
Samir Ghosh ◽  
Hassanet Sodabanlu ◽  
Kentaro Suzuki ◽  
Masakazu Sugiyama ◽  
...  
Keyword(s):  
Quantum Wells ◽  
High Speed ◽  
Polarization Controller ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Carrier Injection

High-speed waveguide optical modulator made from GaSb/AlGaSb multiple quantum wells (MQWs)

1987 ◽  
Vol 23 (10) ◽  
pp. 540-542 ◽  
Author(s):  
T.H. Wood ◽  
E.C. Carr ◽  
C.A. Burrus ◽  
R.S. Tucker ◽  
T.-H. Chiu ◽  
...  
Keyword(s):  
Quantum Wells ◽  
High Speed ◽  
Multiple Quantum Wells ◽  
Optical Modulator ◽  
Multiple Quantum

scholarly journals Role of Strain-Induced Microscale Compositional Pulling on Optical Properties of High Al Content AlGaN Quantum Wells for Deep-Ultraviolet LED

2022 ◽  
Vol 17 (1) ◽  
Author(s):  
Shiqiang Lu ◽  
Zongyan Luo ◽  
Jinchai Li ◽  
Wei Lin ◽  
Hangyang Chen ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Tensile Strain ◽  
Light Emitting Diode ◽  
Formation Enthalpy ◽  
Local Variation ◽  
Multiple Quantum ◽  
Al Content ◽  
Deep Ultraviolet ◽  
High Al Content

AbstractA systematic study was carried out for strain-induced microscale compositional pulling effect on the structural and optical properties of high Al content AlGaN multiple quantum wells (MQWs). Investigations reveal that a large tensile strain is introduced during the epitaxial growth of AlGaN MQWs, due to the grain boundary formation, coalescence and growth. The presence of this tensile strain results in the microscale inhomogeneous compositional pulling and Ga segregation, which is further confirmed by the lower formation enthalpy of Ga atom than Al atom on AlGaN slab using first principle simulations. The strain-induced microscale compositional pulling leads to an asymmetrical feature of emission spectra and local variation in emission energy of AlGaN MQWs. Because of a stronger three-dimensional carrier localization, the area of Ga segregation shows a higher emission efficiency compared with the intrinsic area of MQWs, which is benefit for fabricating efficient AlGaN-based deep-ultraviolet light-emitting diode.

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