Macrospin simulation of high-frequency voltage-assisted magnetization reversal in a perpendicularly magnetized disk with voltage-induced magnetic anisotropy

2014 ◽  
Vol 7 (9) ◽  
pp. 093005 ◽  
Author(s):  
Hiroko Arai ◽  
Hiroshi Imamura ◽  
Takayuki Nozaki
2018 ◽  
Vol 453 ◽  
pp. 107-113 ◽  
Author(s):  
Akinobu Yamaguchi ◽  
Takuo Ohkochi ◽  
Akira Yasui ◽  
Toyohiko Kinoshita ◽  
Keisuke Yamada

2014 ◽  
Vol 924 ◽  
pp. 141-151 ◽  
Author(s):  
Yu Rong An ◽  
Yue Li ◽  
Zhen Wang ◽  
Ya Lu Zuo ◽  
Li Xi

The magnetic FeCoGd thin films with various sputtering power from 10 to 30 W were fabricated on glass substrates by magnetron co-sputtering. The crystal structure of as-deposited FeCoGd thin films was investigated by X-ray diffraction. And an increasing trend of grain size with the increasing sputtering power was shown. When sputtering power is below 30 W, the films exhibited obviously in-plane uniaxial magnetic anisotropy, and the in-plane magnetic anisotropy field Hkdecreased with increasing deposition power. Moreover, good high frequency characteristics were obtained. The magnetization reversal mechanism has been investigated via the in-plane angular dependences of the magnetization and the coercivity. The experimental data points indicated that the magnetization reversal mechanism of FeCoGd film with in-plane uniaxial anisotropy is domain-wall depinning and coherent rotation when the applied field is close to the easy axis and hard axis, respectively. A spin reorientation transition phenomenon was observed when deposition power is larger than 30 W. A stripe domain structure for the sample with 30 W deposition power was developed due to a dominated perpendicular magnetic anisotropy.


2015 ◽  
Vol 51 (11) ◽  
pp. 1-4 ◽  
Author(s):  
Noriyuki Sato ◽  
Amal El-Ghazaly ◽  
Robert M. White ◽  
Shan X. Wang

2021 ◽  
Vol 91 (12) ◽  
pp. 1848
Author(s):  
А.М. Калашникова ◽  
Н.Е. Хохлов ◽  
Л.А. Шелухин ◽  
А.В. Щербаков

Employing short laser pulses with a duration below 100 fs for changing magnetic state of magnetically-ordered media has developed into a distinct branch of magnetism —femtomagnetism which aims at controlling magnetization at ultimately short timescales. Among plethora of femtomagnetic phenomena, there is a class related to impact of femtosecond pulses on magnetic anisotropy of materials and nanostructures which defines orientation of magnetization, magnetic resonance frequencies and spin waves propagation. We present a review of main experimental results obtained in this field. We consider basic mechanisms responsible for a laser-induced change of various anisotropy types: magnetocrystalline, magnetoelastic, interfacial, shape anisotropy, and discuss specifics of these processes in magnetic metals and dielectrics. We consider several examples and describe features of magnetic anisotropy changes resulting from ultrafast laser-induced heating, impact of laser-induced dynamic and quasistatic strains and resonant excitation of electronic states. We also discuss perspectives of employing various mechanisms of laser-induced magnetic anisotropy change for enabling processes prospective for developing devices. We consider precessional magnetization switching for opto-magnetic information recording, generation of high-frequency strongly localized magnetic excitations and fields for magnetic nanotomography and hybrid magnonics, as well as controlling spin waves propagation for optically-reconfigurable magnonics. We further discuss opportunities which open up in studies of ultrafast magnetic anisotropy changes because of using short laser pulses in infrared and terahertz ranges. 


2003 ◽  
Vol 777 ◽  
Author(s):  
T. Devolder ◽  
M. Belmeguenai ◽  
C. Chappert ◽  
H. Bernas ◽  
Y. Suzuki

AbstractGlobal Helium ion irradiation can tune the magnetic properties of thin films, notably their magneto-crystalline anisotropy. Helium ion irradiation through nanofabricated masks can been used to produce sub-micron planar magnetic nanostructures of various types. Among these, perpendicularly magnetized dots in a matrix of weaker magnetic anisotropy are of special interest because their quasi-static magnetization reversal is nucleation-free and proceeds by a very specific domain wall injection from the magnetically “soft” matrix, which acts as a domain wall reservoir for the “hard” dot. This guarantees a remarkably weak coercivity dispersion. This new type of irradiation-fabricated magnetic device can also be designed to achieve high magnetic switching speeds, typically below 100 ps at a moderate applied field cost. The speed is obtained through the use of a very high effective magnetic field, and high resulting precession frequencies. During magnetization reversal, the effective field incorporates a significant exchange field, storing energy in the form of a domain wall surrounding a high magnetic anisotropy nanostructure's region of interest. The exchange field accelerates the reversal and lowers the cost in reversal field. Promising applications to magnetic storage are anticipated.


1978 ◽  
Vol 21 (4) ◽  
pp. 509-512
Author(s):  
A. I. Drokin ◽  
A. V. Ivanova

2004 ◽  
Vol 84 (8) ◽  
pp. 531-537 ◽  
Author(s):  
Simone Herth ¶ ◽  
Martin Eggersmann ‖ ◽  
Giselher Herzer ◽  
Roland Würschum #

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