Low-threshold-current yellow BeZnCdSe quantum-well ridge-waveguide laser diodes under continuous-wave room-temperature operation

2015 ◽  
Vol 9 (1) ◽  
pp. 012101 ◽  
Author(s):  
Jijun Feng ◽  
Ryoichi Akimoto
Keyword(s):  
Quantum Well ◽  
Room Temperature ◽  
Continuous Wave ◽  
Laser Diodes ◽  
Threshold Current ◽  
Ridge Waveguide ◽  
Waveguide Laser ◽  
Low Threshold ◽  
Ridge Waveguide Laser ◽  
Room Temperature Operation

545 nm Room-Temperature Continuous-Wave Operation of BeZnCdSe Quantum-Well Green Laser Diodes with Low Threshold Current Density

2010 ◽  
Vol 3 (9) ◽  
pp. 091201 ◽  
Author(s):  
Jun-ichi Kasai ◽  
Ryouichi Akimoto ◽  
Haruhiko Kuwatsuka ◽  
Toshifumi Hasama ◽  
Hiroshi Ishikawa ◽  
...  
Keyword(s):  
Quantum Well ◽  
Current Density ◽  
Room Temperature ◽  
Continuous Wave ◽  
Laser Diodes ◽  
Threshold Current ◽  
Green Laser ◽  
Threshold Current Density ◽  
Continuous Wave Operation ◽  
Low Threshold

scholarly journals Characteristics Of Room Temperature-CW Operated InGaN Multi-Quantum-Well-Structure Laser Diodes

1997 ◽  
Vol 2 ◽  
Author(s):  
Shuji Nakamura
Keyword(s):  
Quantum Well ◽  
Carrier Density ◽  
Room Temperature ◽  
Continuous Wave ◽  
Laser Diodes ◽  
Gain Coefficient ◽  
Threshold Current ◽  
Quantum Well Structure ◽  
Multi Quantum Well ◽  
Structure Laser

The continuous-wave (CW) operation of InGaN multi-quantum-well-structure laser diodes (LDs) was demonstrated at room temperature (RT) with a lifetime of 35 hours. The threshold current and the voltage of the LDs were 80 mA and 5.5 V, respectively. The threshold current density was 3.6 kA/cm2. When the temperature of the LDs was varied, large mode hopping of the emission wavelength was observed. The carrier lifetime and the threshold carrier density were estimated to be 2-10 ns and 1-2 × 1020/cm3, respectively. From the measurements of gain spectra and an external differential quantum efficiency dependence on the cavity length, the differential gain coefficient, the transparent carrier density, threshold gain and internal loss were estimated to be 5.8×10−17 cm2, 9.3×1019 cm−3, 5200 cm−1 and 43 cm−1, respectively.

Multiple-quantum-well GaInNAs-GaNAs ridge-waveguide laser diodes operating out to 1.4 /spl mu/m

2002 ◽  
Vol 14 (5) ◽  
pp. 591-593 ◽  
Author(s):  
W. Ha ◽  
V. Gambin ◽  
M. Wistey ◽  
S. Bank ◽  
Seongsin Kim ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Laser Diodes ◽  
Ridge Waveguide ◽  
Multiple Quantum ◽  
Waveguide Laser ◽  
Ridge Waveguide Laser

Properties of GaInNAsSb narrow ridge waveguide laser diodes in continuous-wave operation at 1.55um

2007 ◽  
Author(s):  
James A. Gupta ◽  
Pedro J. Barrios ◽  
Greg J. Pakulski ◽  
Geof C. Aers ◽  
Juan A. Caballero ◽  
...  
Keyword(s):  
Continuous Wave ◽  
Laser Diodes ◽  
Ridge Waveguide ◽  
Waveguide Laser ◽  
Continuous Wave Operation ◽  
Narrow Ridge ◽  
Ridge Waveguide Laser

Optimization of active region for 1.3-µm GalnAsP compressive-strain multiple-quantum-well ridge waveguide laser diodes

2006 ◽  
Vol 35 (2) ◽  
pp. 243-249 ◽  
Author(s):  
Po-Hsun Lei ◽  
Chyi-Dar Yang ◽  
Ming-Yuan Wu ◽  
Chih-Wei Hu ◽  
Meng-Chyi Wu ◽  
...  
Keyword(s):  
Active Region ◽  
Quantum Well ◽  
Compressive Strain ◽  
Multiple Quantum Well ◽  
Laser Diodes ◽  
Ridge Waveguide ◽  
Multiple Quantum ◽  
Waveguide Laser ◽  
Ridge Waveguide Laser
Sign in / Sign up

Export Citation Format

Share Document