Possibility and design of resonant terahertz emitters based on nanoscale strained silicon plasma wave transistors with enhanced mobility

2014 ◽  
Vol 53 (6S) ◽  
pp. 06JE08 ◽  
Author(s):  
Jong Yul Park ◽  
Sung-Ho Kim ◽  
Yang-Kyu Choi ◽  
Songcheol Hong ◽  
Sang-Gug Lee ◽  
...  
Keyword(s):  
Plasma Wave ◽  
Strained Silicon ◽  
Enhanced Mobility ◽  
Terahertz Emitters

Hybrid Valence Bands in Strained-Layer Heterostructures grown on Relaxed SiGe Virtual Substrates

2003 ◽  
Vol 765 ◽  
Author(s):  
Minjoo L. Lee ◽  
Eugene A. Fitzgerald
Keyword(s):  
Strained Silicon ◽  
Strained Layer ◽  
Dual Channel ◽  
Enhanced Mobility ◽  
Valence Bands ◽  
Almost All

AbstractThe use of alternative channel materials such as germanium [1,2] and strained silicon (ε-Si) [3-5] is increasingly being considered as a method for improving the performance of MOSFETs. While ε-Si grown on relaxed Si1-x Gex is drawing closer to widespread commercialization, it is currently believed that almost all of the performance benefit in CMOS implementations will derive from the enhanced mobility of the n -MOSFET [5]. In this paper, we demonstrate that ε-Si p -MOSFETs can be engineered to exhibit mobility enhancements that increase or remain constant as a function of inversion density. We have also designed and fabricated ε-Si / ε-Ge dual-channel p -MOSFETs exhibiting mobility enhancements of 10 times. These p -MOSFETs can be integrated on the same wafers as ε-Si n -MOSFETs, making symmetric-mobility CMOS possible.

Hybrid Valence Bands in Strained-Layer Heterostructures grown on Relaxed SiGe Virtual Substrates

2003 ◽  
Vol 768 ◽  
Author(s):  
Minjoo L. Lee ◽  
Eugene A. Fitzgerald
Keyword(s):  
Strained Silicon ◽  
Strained Layer ◽  
Dual Channel ◽  
Enhanced Mobility ◽  
Valence Bands ◽  
Almost All

AbstractThe use of alternative channel materials such as germanium [1,2] and strained silicon (ε-Si) [3-5] is increasingly being considered as a method for improving the performance of MOSFETs. While ε-Si grown on relaxed Si1-xGex is drawing closer to widespread commercialization, it is currently believed that almost all of the performance benefit in CMOS implementations will derive from the enhanced mobility of the n-MOSFET [5]. In this paper, we demonstrate that ε-Si p-MOSFETs can be engineered to exhibit mobility enhancements that increase or remain constant as a function of inversion density. We have also designed and fabricated ε-Si / ε-Ge dual-channel p-MOSFETs exhibiting mobility enhancements of 10 times. These p-MOSFETs can be integrated on the same wafers as ε-Si n-MOSFETs, making symmetric-mobility CMOS possible.

Physical Analysis and Design of Resonant Plasma-Wave Transistors for Terahertz Emitters

2015 ◽  
Vol 5 (2) ◽  
pp. 244-250 ◽  
Author(s):  
Jong Yul Park ◽  
Sung-Ho Kim ◽  
Sung-Min Hong ◽  
Kyung Rok Kim
Keyword(s):  
Plasma Wave ◽  
Physical Analysis ◽  
Analysis And Design ◽  
Terahertz Emitters

High Transport Si/SiGe Heterostructures for CMOS Transistors with Orientation and Strain Enhanced Mobility

2011 ◽  
Vol E94-C (5) ◽  
pp. 712-716 ◽  
Author(s):  
Jungwoo OH ◽  
Jeff HUANG ◽  
Injo OK ◽  
Se-Hoon LEE ◽  
Paul D. KIRSCH ◽  
...  
Keyword(s):  
Cmos Transistors ◽  
Enhanced Mobility

Atomistic Calculation of Elastic Moduli in Strained Silicon

2007 ◽  
Author(s):  
Richard Zhu ◽  
Ernian Pan ◽  
Peter W. Chung ◽  
Xinli Cai ◽  
Kim M. Liew ◽  
...  
Keyword(s):  
Elastic Moduli ◽  
Strained Silicon ◽  
Atomistic Calculation

Ice Plasma Wave Measurements in the Ion Pick-Up Region of Comet Halley

2013 ◽  
pp. 857-860
Author(s):  
F.L. Scarf ◽  
F.V. Coroniti ◽  
C.F. Kennel ◽  
T.R. Sanderson ◽  
K-P Wenzel ◽  
...  
Keyword(s):  
Plasma Wave ◽  
Wave Measurements ◽  
Comet Halley
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