High Transport Si/SiGe Heterostructures for CMOS Transistors with Orientation and Strain Enhanced Mobility

2011 ◽  
Vol E94-C (5) ◽  
pp. 712-716 ◽  
Author(s):  
Jungwoo OH ◽  
Jeff HUANG ◽  
Injo OK ◽  
Se-Hoon LEE ◽  
Paul D. KIRSCH ◽  
...  
Keyword(s):  
Cmos Transistors ◽  
Enhanced Mobility

Hybrid Valence Bands in Strained-Layer Heterostructures grown on Relaxed SiGe Virtual Substrates

2003 ◽  
Vol 765 ◽  
Author(s):  
Minjoo L. Lee ◽  
Eugene A. Fitzgerald
Keyword(s):  
Strained Silicon ◽  
Strained Layer ◽  
Dual Channel ◽  
Enhanced Mobility ◽  
Valence Bands ◽  
Almost All

AbstractThe use of alternative channel materials such as germanium [1,2] and strained silicon (ε-Si) [3-5] is increasingly being considered as a method for improving the performance of MOSFETs. While ε-Si grown on relaxed Si1-x Gex is drawing closer to widespread commercialization, it is currently believed that almost all of the performance benefit in CMOS implementations will derive from the enhanced mobility of the n -MOSFET [5]. In this paper, we demonstrate that ε-Si p -MOSFETs can be engineered to exhibit mobility enhancements that increase or remain constant as a function of inversion density. We have also designed and fabricated ε-Si / ε-Ge dual-channel p -MOSFETs exhibiting mobility enhancements of 10 times. These p -MOSFETs can be integrated on the same wafers as ε-Si n -MOSFETs, making symmetric-mobility CMOS possible.

Accounting for Dose-Enhancement Effects with CMOS Transistors

1985 ◽  
Vol 32 (6) ◽  
pp. 4369-4375 ◽  
Author(s):  
D. M. Fleetwood ◽  
P. S. Winokur ◽  
R. W. Beegle ◽  
P. V. Dressendorfer ◽  
B. L. Draper
Keyword(s):  
Dose Enhancement ◽  
Cmos Transistors

Tris(4-(1-phenyl-1H-benzo[d]imidazole)phenyl)phosphine oxide for enhanced mobility and restricted traps in photovoltaic interlayers

2021 ◽  
Vol 9 (10) ◽  
pp. 3642-3651
Author(s):  
Jihyun Lim ◽  
Do-Yeong Choi ◽  
Woongsik Jang ◽  
Hyeon-Ho Choi ◽  
Yun-Hi Kim ◽  
...  
Keyword(s):  
Solar Cells ◽  
Electron Transport ◽  
Small Molecule ◽  
Phosphine Oxide ◽  
Organic Material ◽  
Perovskite Solar Cells ◽  
Effective Electron ◽  
Enhanced Mobility

Small molecule organic material, tris(4-(1-phenyl-1H-benzo[d]imidazole)phenyl)phosphine oxide (TIPO) was newly synthesised and introduced into an n-type interlayer in planar perovskite solar cells for effective electron transport.

Reduced interfacial fluctuation leading enhanced mobility in a monolayer MoS2 DG FET under low vertical electric field

2019 ◽  
Vol 30 (34) ◽  
pp. 345206 ◽  
Author(s):  
Hyunjin Ji ◽  
Hojoon Yi ◽  
Sakong Wonkil ◽  
Hyun Kim ◽  
Seong Chu Lim
Keyword(s):  
Electric Field ◽  
Monolayer Mos2 ◽  
Vertical Electric Field ◽  
Enhanced Mobility

TWO PHOTON PHOTOCONDUCTIVITY OF ZnS USING XeCl LASER

2003 ◽  
Vol 17 (24) ◽  
pp. 1265-1270 ◽  
Author(s):  
R. D. SINGH ◽  
D. S. AHLAWAT ◽  
ARUN GAUR
Keyword(s):  
Band Gap ◽  
Photon Energy ◽  
Xecl Laser ◽  
Two Photon ◽  
Comparison Of Results ◽  
Photon Excitation ◽  
Enhanced Mobility ◽  
Two Photon Excitation

Log Q versus log I ph characteristics and laser enhanced mobility in the case of ZnS have been studied using a XeCl laser. The comparison of results in this case with multiphoton photoconductivity of other materials indicates two photon excitation from a lower valance band, wherefrom one-photon excitation is forbidden but two-photon excitation is allowed. Since the band-gap of ZnS is smaller than the photon energy of the XeCl laser, the result seems to be interesting.

Mechanisms of Noise Degradation in Low Power 65 nm CMOS Transistors Exposed to Ionizing Radiation

2010 ◽  
Author(s):  
Valerio Re ◽  
Luigi Gaioni ◽  
Massimo Manghisoni ◽  
Lodovico Ratti ◽  
Gianluca Traversi
Keyword(s):  
Ionizing Radiation ◽  
Low Power ◽  
Cmos Transistors

An Automated Setup for the Characterization of Time-Based Degradation Effects Including the Process Variability in 40 nm CMOS Transistors

2021 ◽  
pp. 1-1
Author(s):  
Xhesila Xhafa ◽  
Ali Dogus Gungordu ◽  
Didem Erol ◽  
Yavuzhan Yavuz ◽  
Mustafa Berke Yelten
Keyword(s):  
Process Variability ◽  
Cmos Transistors

Enhanced mobility of confined polymers

2007 ◽  
Vol 6 (12) ◽  
pp. 961-965 ◽  
Author(s):  
Kyusoon Shin ◽  
Sergei Obukhov ◽  
Jiun-Tai Chen ◽  
June Huh ◽  
Yoontae Hwang ◽  
...  
Keyword(s):  
Confined Polymers ◽  
Enhanced Mobility

Process integration of infrared-sensitive PIN photodiodes and CMOS transistors in a single-SiGe substrate

2005 ◽  
Vol 8 (1-3) ◽  
pp. 429-433
Author(s):  
L. Nebrich ◽  
K. Neumeier ◽  
A. Stadler ◽  
J. Weber ◽  
F. Bensch ◽  
...  
Keyword(s):  
Process Integration ◽  
Cmos Transistors ◽  
Pin Photodiodes
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