Improved room temperature electron mobility in self-buffered anatase TiO2epitaxial thin film grown at low temperature

2014 ◽  
Vol 53 (9) ◽  
pp. 090305 ◽  
Author(s):  
Thantip S. Krasienapibal ◽  
Tomoteru Fukumura ◽  
Yasushi Hirose ◽  
Tetsuya Hasegawa
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Electron Mobility ◽  
Room Temperature ◽  
Temperature Electron

Low‐temperature electron mobility in InSb

1977 ◽  
Vol 48 (8) ◽  
pp. 3621-3622 ◽  
Author(s):  
B. R. Nag ◽  
G. M. Dutta
Keyword(s):  
Low Temperature ◽  
Electron Mobility ◽  
Temperature Electron

Low-temperature electron mobility in Trigate SOI MOSFETs

2006 ◽  
Vol 27 (2) ◽  
pp. 120-122 ◽  
Author(s):  
J.-P. Colinge ◽  
A.J. Quinn ◽  
L. Floyd ◽  
G. Redmond ◽  
J.C. Alderman ◽  
...  
Keyword(s):  
Low Temperature ◽  
Electron Mobility ◽  
Temperature Electron

Conductivity Study of Initial Stages of β-PdBi2 Formation on Bi/Si(111)

2018 ◽  
Vol 386 ◽  
pp. 110-115
Author(s):  
Maxim Viktorovich Ivanchenko ◽  
Elena Anatolyevna Borisenko ◽  
Maria Valeryevna Ryzhkova ◽  
Dmitry Anatolyevich Tsukanov
Keyword(s):  
Thin Film ◽  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Ultrathin Films ◽  
Room Temperature ◽  
Molecular Beam ◽  
Electrical Conductance ◽  
Layered Material ◽  
Bulk Crystals ◽  
Superconducting Properties

Bulk β-PdBi2 layered material is known as a low-temperature superconductor. Recently, ultrathin films of this material consisting of dozens of triple layers were grown by molecular beam epitaxy and demonstrated structural, electronic and superconducting properties similar to those of bulk crystals. In this paper, we showed that thin film of β-PdBi2 can be grown by alternative palladium and bismuth deposition and its electrical conductance was investigated at room temperature in comparison with the conductivity of bulk β - PdBi2.

Coexistence of theDXcenter with nonmetastable states of the donor impurity in Si-dopedAlxGa1−xAs: Effects on the low-temperature electron mobility

1996 ◽  
Vol 53 (16) ◽  
pp. 10715-10727 ◽  
Author(s):  
A. Baraldi ◽  
P. Frigeri ◽  
C. Ghezzi ◽  
A. Parisini ◽  
A. Bosacchi ◽  
...  
Keyword(s):  
Low Temperature ◽  
Electron Mobility ◽  
Donor Impurity ◽  
Temperature Electron

Primary Defects in n-Type Irradiated Germanium: A First-Principles Investigation

2007 ◽  
Vol 131-133 ◽  
pp. 253-258 ◽  
Author(s):  
A. Carvalho ◽  
R. Jones ◽  
C. Janke ◽  
Sven Öberg ◽  
Patrick R. Briddon
Keyword(s):  
Low Temperature ◽  
Point Defects ◽  
Electron Irradiation ◽  
First Principles ◽  
Low Temperatures ◽  
Damage Evolution ◽  
Room Temperature ◽  
Temperature Electron ◽  
Conductivity Loss

The properties of point defects introduced by low temperature electron irradiation of germanium are investigated by first-principles modeling. Close Frenkel pairs, including the metastable fourfold coordinated defect, are modelled and their stability is discussed. It is found that damage evolution upon annealing below room temperature can be consistently explained with the formation of correlated interstitial-vacancy pairs if the charge-dependent properties of the vacancy and self-interstitial are taken into account. We propose that Frenkel pairs can trap up to two electrons and are responsible for conductivity loss in n-type Ge at low temperatures.

Low-temperature electron mobility in a real δ-doped semiconductor

1996 ◽  
Vol 54 (11) ◽  
pp. 7658-7661 ◽  
Author(s):  
L. R. González ◽  
J. Krupski ◽  
T. Szwacka
Keyword(s):  
Low Temperature ◽  
Electron Mobility ◽  
Temperature Electron
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