Fabrication of (110)-one-axis-oriented perovskite-type oxide thin films and their application to buffer layer

2016 ◽  
Vol 55 (10S) ◽  
pp. 10TA19
Author(s):  
Tomoya Sato ◽  
Daichi Ichinose ◽  
Junichi Kimura ◽  
Takaaki Inoue ◽  
Takanori Mimura ◽  
...  
Keyword(s):  
Thin Films ◽  
Buffer Layer ◽  
Oxide Thin Films ◽  
Perovskite Type Oxide ◽  
Perovskite Type

Catalytic behavior of La0.6Sr0.4Co0.8Fe0.2O3 perovskite-type oxide thin films deposited on YSZ during the reaction of ethanol oxidation

Ionics ◽  
1998 ◽  
Vol 4 (1-2) ◽  
pp. 157-160 ◽  
Author(s):  
S. Douvartzides ◽  
C. Athanasiou ◽  
N. Georgakakis ◽  
P. Tsiakaras
Keyword(s):  
Thin Films ◽  
Ethanol Oxidation ◽  
Oxide Thin Films ◽  
Catalytic Behavior ◽  
Perovskite Type Oxide ◽  
Perovskite Type

Dielectric relaxation of perovskite—type oxide thin films

1995 ◽  
Vol 10 (1-4) ◽  
pp. 231-245 ◽  
Author(s):  
M. Schumacher ◽  
G. W. Dietz ◽  
R. Waser
Keyword(s):  
Thin Films ◽  
Dielectric Relaxation ◽  
Oxide Thin Films ◽  
Perovskite Type Oxide ◽  
Perovskite Type

High Proton Conductivity in Highly Defected Perovskite-Type Oxide Thin Films

2014 ◽  
Author(s):  
Y. Zenitani ◽  
T. Nishihara ◽  
T. Asano ◽  
H. Adachi ◽  
A. Itou ◽  
...  
Keyword(s):  
Thin Films ◽  
Proton Conductivity ◽  
Oxide Thin Films ◽  
High Proton Conductivity ◽  
Perovskite Type Oxide ◽  
High Proton ◽  
Perovskite Type

Growth of (110)-one-axis-oriented perovskite-type oxide thin films with local epitaxy on (111)SrTiO3 single crystal substrates

2019 ◽  
Vol 58 (SL) ◽  
pp. SLLB01
Author(s):  
Tomoya Sato ◽  
Takanori Kiguchi ◽  
Toyohiko J. Konno ◽  
Jun-ichi Kimura ◽  
Daichi Ichinose ◽  
...  
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Oxide Thin Films ◽  
Perovskite Type Oxide ◽  
Perovskite Type

Fabrication of BiFeO3-Bi(Zn1/2Ti1/2)O3 Solid Solution Thin Films Using Perovskite-Type Oxide Interface Layer

2013 ◽  
Vol 566 ◽  
pp. 163-166
Author(s):  
Mari Hayashi ◽  
Shintaro Yasui ◽  
Hiroshi Funakubo ◽  
Hiroshi Uchida
Keyword(s):  
Thin Films ◽  
Buffer Layer ◽  
Ferroelectric Materials ◽  
Film Deposition ◽  
Perovskite Oxide ◽  
Oxide Materials ◽  
Si Substrate ◽  
Oxide Interface ◽  
Perovskite Type Oxide ◽  
Perovskite Type

Bi-based perovskite-type oxide materials such as BiFeO3 (BFO) and Bi (Zn1/2Ti1/2)O3 and the related compounds receive much attention and have been developed actively as important candidates for Pb-free ferroelectric materials instead of toxic Pb-based perovskite oxide materials. Recently, many researches have been reported for thin films of Bi-based materials by various film-deposition techniques for actual application of semiconductive devices, microactuators, etc. In this study, we tried preferential crystal growth of BFZT films on semiconductive silicon substrates using uniaxial-(100)-oriented LaNiO3 (LNO) buffer layer. BFO films were fabricated via chemical solution deposition (CSD) technique on platinized silicon wafer [(111)Pt/TiO2/(100)S and (100)LNO-coated platinized silicon [(100)LNO/(111)Pt/TiO2/(100)S substrates. XRD analysis indicated that the films fabricated on (111)Pt/TiO2/(100)Si substrate consisted of randomly-oriented BFZT crystal with lower crystallinity. On the other hand, the films on (100)LNO/(111)Pt/TiO2/(100)Si consisted of uniaxial-one-oriented BFZT crystal with higher crystallinity. The crystallization temperature these films were 500°C, respectively. These results suggest that the BFZT crystal was grown successfully on uniaxial oriented (100)LNO plane which also had perovskite-type crystal structure. Consequently, one-oriented BFZT films were prepared on Si substrate successfully using (100)LNO buffer layer.

Electrical Properties of Perovskite Type Oxide Thin-Films Prepared by RF Sputtering

1985 ◽  
Vol 24 (S2) ◽  
pp. 413 ◽  
Author(s):  
Jun Kuwata ◽  
Yosuke Fujita ◽  
Tomizo Matsuoka ◽  
Takao Tohda ◽  
Masahiro Nishikawa ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Rf Sputtering ◽  
Oxide Thin Films ◽  
Perovskite Type Oxide ◽  
Perovskite Type
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