Resist image quality control via acid diffusion constant and/or photodecomposable quencher concentration in the fabrication of 11 nm half-pitch line-and-space patterns using extreme-ultraviolet lithography
2018 ◽
Vol 57
(5)
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pp. 056501
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2013 ◽
Vol 52
(1R)
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pp. 016501
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2013 ◽
Vol 52
(7R)
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pp. 076501
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2014 ◽
Vol 54
(1)
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pp. 016502
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2008 ◽
Vol 21
(3)
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pp. 421-427
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2014 ◽
Vol 53
(10)
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pp. 106501
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