High-NA EUV lithography: current status and outlook for the future

High-NA extreme ultraviolet (EUV) lithography is currently in development. Fabrication of exposure tools and optics with a numerical aperture (NA) equal to 0.55 has started at ASML and Carl Zeiss. Lenses with such high NA will have very small depths-of-focus, which will require improved focus systems and significant improvements in wafer flatness during processing. Lenses are anamorphic to address mask 3D issues, which results in wafer field sizes of 26 mm × 16.5 mm, half that of lower NA EUV tools and optical scanners. Production of large die will require stitching. Computational infrastructure is being created to support high-NA lithography, including simulators that use Tatian polynomials to characterize the aberrations of lenses with central obscurations. High resolution resists that meet the line-edge roughness (LER) and defect requirements for high-volume manufacturing (HVM) also need to be developed. High power light sources will also be needed to limit photon shot noise.

True 3D Nanometrology: 3D-Probing with a Cantilever-Based Sensor

State of the art three-dimensional atomic force microscopes (3D-AFM) cannot measure three spatial dimensions separately from each other. A 3D-AFM-head with true 3D-probing capabilities is presented in this paper. It detects the so-called 3D-Nanoprobes CD-tip displacement with a differential interferometer and an optical lever. The 3D-Nanoprobe was specifically developed for tactile 3D-probing and is applied for critical dimension (CD) measurements. A calibrated 3D-Nanoprobe shows a selectivity ratio of 50:1 on average for each of the spatial directions x, y, and z. Typical stiffness values are kx = 1.722 ± 0.083 N/m, ky = 1.511 ± 0.034 N/m, and kz = 1.64 ± 0.16 N/m resulting in a quasi-isotropic ratio of the stiffness of 1.1:0.9:1.0 in x:y:z, respectively. The probing repeatability of the developed true 3D-AFM shows a standard deviation of 0.18 nm, 0.31 nm, and 0.83 nm for x, y, and z, respectively. Two CD-line samples type IVPS100-PTB, which were perpendicularly mounted to each other, were used to test the performance of the developed true 3D-AFM: repeatability, long-term stability, pitch, and line edge roughness and linewidth roughness (LER/LWR), showing promising results.

Line-Edge Roughness from Extreme Ultraviolet Lithography to Fin-Field-Effect-Transistor: Computational Study

Although extreme ultraviolet lithography (EUVL) has potential to enable 5-nm half-pitch resolution in semiconductor manufacturing, it faces a number of persistent challenges. Line-edge roughness (LER) is one of critical issues that significantly affect critical dimension (CD) and device performance because LER does not scale along with feature size. For LER creation and impacts, better understanding of EUVL process mechanism and LER impacts on fin-field-effect-transistors (FinFETs) performance is important for the development of new resist materials and transistor structure. In this paper, for causes of LER, a modeling of EUVL processes with 5-nm pattern performance was introduced using Monte Carlo method by describing the stochastic fluctuation of exposure due to photon-shot noise and resist blur. LER impacts on FinFET performance were investigated using a compact device method. Electric potential and drain current with fin-width roughness (FWR) based on LER and line-width roughness (LWR) were fluctuated regularly and quantized as performance degradation of FinFETs.

Formulation of trade-off relationships between resolution, line edge roughness, and sensitivity in sub-10 nm half-pitch region for chemically amplified extreme ultraviolet resists

The manufacturing of semiconductor devices using extreme ultraviolet (EUV) lithography started in 2019. A high numerical aperture (NA) tool under development is capable of resolving 8 nm line-and-space optical images and will extend the application of EUV lithography. However, resist materials have not been yet applicable to the production with 8 nm resolution. In this study, the relationships among the half-pitch of line-and-space patterns (resolution), chemical gradient [an indicator of line edge roughness (LER)], and sensitivity were investigated in the sub-10 nm half-pitch region for chemically amplified EUV resists. The chemical gradient was simulated on the basis of their sensitization and reaction mechanisms. The relationship was formulated as a function of total sensitizer concentration (the sum of photoacid generator and photodecomposable quencher concentrations) and the thermalization distance of secondary electrons. The effect of thermalized electrons was well incorporated into the trade-off relationships between resolution, LER, and sensitivity.

Impact of Process-Induced Variations on Negative Capacitance Junctionless Nanowire FET

In this study, the impact of the negative capacitance (NC) effect on process-induced variations, such as work function variation (WFV), random dopant fluctuation (RDF), and line edge roughness (LER), was investigated and compared to those of the baseline junctionless nanowire FET (JL-NWFET) in both linear (Vds = 0.05 V) and saturation (Vds = 0.5 V) modes. Sentaurus TCAD and MATLAB were used for the simulation of the baseline JL-NWFET and negative capacitance JL-NWFET (NC-JL-NWFET). Owing to the NC effect, the NC-JL-NWFET showed less variation in terms of device performance, such as σ[Vt], σ[SS], σ[Ion/Ioff], σ[Vt]/µ[Vt], σ[SS]/µ[SS], and σ[Ion/Ioff]/µ[Ion/Ioff], and enhanced device performance, which implies that the NC effect can successfully control the variation-induced degradation.