The Application of CVD SiO2 and PECVD Si3N4 in Fabrication and Passivation of Long-Wavelength HgCdTe Photodiode Arrays

1995 ◽  
Author(s):  
V. M. Emeksuzyan ◽  
L. N. Romashko ◽  
G. Y. Saleeva ◽  
T. I. Zakharyash ◽  
N. Kh. Talipov ◽  
...  
Keyword(s):  
Long Wavelength ◽  
Hgcdte Photodiode ◽  
Photodiode Arrays

Electrical effects of subgrain boundaries, twins, dislocations, and Te precipitation on long-wavelength IR HgCdTe photodiode arrays

1994 ◽  
Author(s):  
R. Scott List ◽  
John H. Tregilgas ◽  
Arthur M. Turner ◽  
Jeffrey D. Beck ◽  
John C. Ehmke
Keyword(s):  
Long Wavelength ◽  
Hgcdte Photodiode ◽  
Photodiode Arrays

Temperature dependence of the dark current in HgCdTe photodiode arrays

2005 ◽  
Author(s):  
F. F. Sizov ◽  
J. V. Gumenjuk-Sichevska ◽  
I. O. Lysiuk ◽  
V. V. Zabudsky ◽  
A. G. Golenkov ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Dark Current ◽  
Hgcdte Photodiode ◽  
Photodiode Arrays

Electrical characteristic signatures for non-uniformity analysis in HgCdTe photodiode arrays

2013 ◽  
Vol 56 ◽  
pp. 69-75 ◽  
Author(s):  
Raghvendra Sahai Saxena ◽  
Radheshyam Nokhwal ◽  
R.K. Bhan ◽  
R.K. Sharma
Keyword(s):  
Electrical Characteristic ◽  
Hgcdte Photodiode ◽  
Photodiode Arrays

scholarly journals Fabrication and performances of arsenic-doped HgCdTe long-wavelength infrared photodiode arrays

2012 ◽  
Vol 31 (5) ◽  
pp. 403-406
Author(s):  
Hai-Bin LI ◽  
Chun LIN ◽  
Xing-Guo CHEN ◽  
Yan-Feng WEI ◽  
Jing-Je XU ◽  
...  
Keyword(s):  
Long Wavelength ◽  
Infrared Photodiode ◽  
Photodiode Arrays ◽  
Long Wavelength Infrared

Changes in 8–12 μm CdxHg1−xTe photodiode arrays caused by fast neutron irradiation

2010 ◽  
Vol 18 (3) ◽  
Author(s):  
I.O. Lysiuk ◽  
J.V. Gumenjuk-Sichevska ◽  
S.A. Dvoretsky ◽  
V.S. Varavin
Keyword(s):  
Fast Neutrons ◽  
High Concentration ◽  
Model Calculations ◽  
Long Wavelength ◽  
Current Voltage ◽  
Before And After ◽  
Photodiode Array ◽  
Current Voltage Characteristics ◽  
Photodiode Arrays ◽  
Long Wavelength Infrared

AbstractWe have measured the current-voltage characteristics of the long-wavelength infrared (LWIR) photodiode array, formed on the epitaxial CdxHg1−xTe film (x = 0.21–0.23) with a high concentration of the Shockley-Read-Hall centres, before and after irradiating it with fast neutrons (energy 1 MeV, dose 5×1013 cm−2) at room temperature. Residual changes in current-voltage characteristics, persisting after 20 days, have been identified. Model calculations indicate that the Shockley-Read-Hall centre concentration increases 2–4 times, and the carrier lifetime decreases 2–5 times after the irradiation.

Surface leakage current in 125  μm long-wavelength HgCdTe infrared photodiode arrays

2016 ◽  
Vol 41 (4) ◽  
pp. 828 ◽  
Author(s):  
Weicheng Qiu ◽  
Weida Hu ◽  
Chun Lin ◽  
Xiaoshuang Chen ◽  
Wei Lu
Keyword(s):  
Leakage Current ◽  
Long Wavelength ◽  
Surface Leakage Current ◽  
Infrared Photodiode ◽  
Photodiode Arrays ◽  
Surface Leakage

Negative luminescence from large-area HgCdTe photodiode arrays with 4.8-6.0-/spl mu/m cutoff wavelengths

2005 ◽  
Vol 41 (2) ◽  
pp. 227-233 ◽  
Author(s):  
J.R. Lindle ◽  
W.W. Bewley ◽  
I. Vurgaftman ◽  
Chul Soo Kim ◽  
J.R. Meyer ◽  
...  
Keyword(s):  
Large Area ◽  
Negative Luminescence ◽  
Hgcdte Photodiode ◽  
Photodiode Arrays
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