Electrical characteristic signatures for non-uniformity analysis in HgCdTe photodiode arrays

Due to the development of semiconductor detectors with high spatial resolution -- e.g. charge coupled devices (CCDs) or photodiode arrays (PDAs) -- the parallel detection of electron energy loss spectra (EELS) has become an important alternative to serial registration. Using parallel detection for recording of energy spectroscopic large angle convergent beam patterns (LACBPs) special selected scattering vectors and small detection apertures lead to very low intensities. Therefore the very sensitive direct irradiation of a cooled linear PDA instead of the common combination of scintillator, fibre optic, and semiconductor has been investigated. In order to obtain a sufficient energy resolution the spectra are optionally magnified by a quadrupole-lens system.The detector used is a Hamamatsu S2304-512Q linear PDA with 512 diodes and removed quartz-glas window. The sensor size is 13 μm ∗ 2.5 mm with an element spacing of 25 μm. Along with the dispersion of 3.5 μm/eV at 40 keV the maximum energy resolution is limited to about 7 eV, so that a magnification system should be attached for experiments requiring a better resolution.

Download Full-text

Combine Nanoprobing Technique with Difference Analysis to Identify Nonvisual Failures

ISTFA 2006: Conference Proceedings from the 32nd International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2006p0264 ◽

2006 ◽

Author(s):

Cha-Ming Shen ◽

Tsan-Cheng Chuang ◽

Jie-Fei Chang ◽

Jin-Hong Chou

Keyword(s):

Failure Mode ◽

Failure Modes ◽

Electrical Characteristic ◽

The Novel ◽

Difference Analysis ◽

Original Idea ◽

Deductive Method ◽

Complete Measurement

Abstract This paper presents a novel deductive methodology, which is accomplished by applying difference analysis to nano-probing technique. In order to prove the novel methodology, the specimens with 90nm process and soft failures were chosen for the experiment. The objective is to overcome the difficulty in detecting non-visual, erratic, and complex failure modes. And the original idea of this deductive method is based on the complete measurement of electrical characteristic by nano-probing and difference analysis. The capability to distinguish erratic and invisible defect was proven, even when the compound and complicated failure mode resulted in a puzzling characteristic.

Download Full-text

Site-Specific Low Angle Plasma FIB Milling for Cross-Sectional Electrical Characterization

ISTFA 2019: Conference Proceedings from the 45th International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2019p0460 ◽

2019 ◽

Author(s):

Chuan Zhang ◽

Jane Y. Li ◽

John Aguada ◽

Howard Marks

Keyword(s):

Cross Section ◽

Focused Ion Beam ◽

Electrical Characteristic ◽

Preparation Method ◽

Ion Beam ◽

Grazing Angle ◽

Electrical Characterization ◽

Sample Preparation Method ◽

Cross Sectional ◽

Site Specific

Abstract This paper introduces a novel sample preparation method using plasma focused ion-beam (pFIB) milling at low grazing angle. Efficient and high precision preparation of site-specific cross-sectional samples with minimal alternation of device parameters can be achieved with this method. It offers the capability of acquiring a range of electrical characteristic signals from specific sites on the cross-section of devices, including imaging of junctions, Fins in the FinFETs and electrical probing of interconnect metal traces.

Download Full-text