Novel, Simple Model for High Temperature Stability of InAs/GaAs Self-assembled Quantum Dot Lasers with Optimum p-type Modulation Doping

2008 ◽  
Author(s):  
C. Y. Jin ◽  
H. Y. Liu ◽  
T. J. Badcock ◽  
K. M. Groom ◽  
D. J. Mowbray ◽  
...  
Keyword(s):  
High Temperature ◽  
Simple Model ◽  
Quantum Dot ◽  
Temperature Stability ◽  
Quantum Dot Lasers ◽  
High Temperature Stability ◽  
Modulation Doping ◽  
Self Assembled

Directly modulated quantum dot lasers on silicon with a milliampere threshold and high temperature stability

2018 ◽  
Vol 6 (8) ◽  
pp. 776 ◽  
Author(s):  
Yating Wan ◽  
Daisuke Inoue ◽  
Daehwan Jung ◽  
Justin C. Norman ◽  
Chen Shang ◽  
...  
Keyword(s):  
High Temperature ◽  
Quantum Dot ◽  
Temperature Stability ◽  
Quantum Dot Lasers ◽  
High Temperature Stability

scholarly journals Enhanced efficiency and high temperature stability of hybrid quantum dot light-emitting diodes using molybdenum oxide doped hole transport layer

RSC Advances ◽  
2019 ◽  
Vol 9 (28) ◽  
pp. 16252-16257 ◽  
Author(s):  
Jinyoung Yun ◽  
Jaeyun Kim ◽  
Byung Jun Jung ◽  
Gyutae Kim ◽  
Jeonghun Kwak
Keyword(s):  
High Temperature ◽  
Quantum Dot ◽  
Molybdenum Oxide ◽  
Temperature Stability ◽  
Hole Transport ◽  
Transport Layer ◽  
Hole Transport Layer ◽  
Stable Operation ◽  
High Temperature Stability ◽  
Light Emitting

QLEDs introducing a p-doped HTL exhibit stable operation at high temperature up to 400 K.

Quantum dot 850 nm VCSELs with extreme high temperature stability operating at bit rates up to 25 Gbit/s at 150 °C

2019 ◽  
Vol 155 ◽  
pp. 150-158 ◽  
Author(s):  
N. Ledentsov ◽  
M. Agustin ◽  
V.A. Shchukin ◽  
J.-R. Kropp ◽  
N.N. Ledentsov ◽  
...  
Keyword(s):  
High Temperature ◽  
Quantum Dot ◽  
Temperature Stability ◽  
High Temperature Stability ◽  
Extreme High Temperature

High-brightness 13 μm InAs/GaAs quantum dot tapered laser with high temperature stability

2012 ◽  
Vol 37 (19) ◽  
pp. 4071 ◽  
Author(s):  
Yulian Cao ◽  
Haiming Ji ◽  
Pengfei Xu ◽  
Yongxian Gu ◽  
Wenquan Ma ◽  
...  
Keyword(s):  
High Temperature ◽  
Quantum Dot ◽  
Temperature Stability ◽  
High Temperature Stability ◽  
High Brightness ◽  
Gaas Quantum Dot ◽  
Tapered Laser

GROWTH AND CHARACTERIZATION OF MULTI-LAYER 1.3 μm QUANTUM DOT LASERS

2007 ◽  
Vol 06 (03n04) ◽  
pp. 291-296 ◽  
Author(s):  
DAVID MOWBRAY ◽  
TOM BADCOCK ◽  
IAN SELLERS ◽  
ANDREW RAMSAY ◽  
MAURICE SKOLNICK ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Room Temperature ◽  
Defect Formation ◽  
Temperature Stability ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Temperature Threshold ◽  
Quantum Dot Lasers ◽  
High Temperature Stability

The growth and characterization of multi-layer 1.3 μm InAs - GaAs quantum dot lasers is reported. It is demonstrated that the growth of the GaAs spacer layer, placed between the InAs quantum dot layers, must be carefully optimized to prevent defect formation. With optimized growth very low room temperature threshold current density (J th ) devices are obtained. Typical cw values are 32.5 and 17 A cm-2 for as-grown and HR coated facet devices, respectively. Operation above 100°C is possible. Mechanisms contributing to the temperature sensitivity of J th above room temperature are discussed. By combining the optimized growth with p-type modulation doping of the QDs both low J th and high temperature stability of J th are achieved at room temperature.

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