Passivation Effect of Amorphous Silicon Oxide Thin Films Studied by Hydrogen Evolution

2013 ◽  
Author(s):  
K. Nakada ◽  
S. Miyajima ◽  
M. Konagai
Keyword(s):  
Thin Films ◽  
Amorphous Silicon ◽  
Hydrogen Evolution ◽  
Silicon Oxide ◽  
Oxide Thin Films ◽  
Amorphous Silicon Oxide

On the bonding microstructure of amorphous silicon oxide thin films

2006 ◽  
Vol 515 (4) ◽  
pp. 2284-2290 ◽  
Author(s):  
Martin T.K. Soh ◽  
N. Savvides ◽  
P.J. Martin ◽  
C.A. Musca
Keyword(s):  
Thin Films ◽  
Amorphous Silicon ◽  
Silicon Oxide ◽  
Oxide Thin Films ◽  
Amorphous Silicon Oxide

Hydrogen incorporation in dual-mode PECVD amorphous silicon oxide thin films

1996 ◽  
Vol 80 (1-2) ◽  
pp. 8-12 ◽  
Author(s):  
R. Etemadi ◽  
C. Godet ◽  
J. Perrin ◽  
J.E. Bourée ◽  
B. Drévillon ◽  
...  
Keyword(s):  
Thin Films ◽  
Amorphous Silicon ◽  
Silicon Oxide ◽  
Oxide Thin Films ◽  
Dual Mode ◽  
Hydrogen Incorporation ◽  
Amorphous Silicon Oxide

Dual-mode radio frequency/microwave plasma deposition of amorphous silicon oxide thin films

1995 ◽  
Vol 187 ◽  
pp. 70-74 ◽  
Author(s):  
R. Etemadi ◽  
C. Godet ◽  
M. Kildemo ◽  
J.E. Bourée ◽  
R. Brenot ◽  
...  
Keyword(s):  
Thin Films ◽  
Radio Frequency ◽  
Amorphous Silicon ◽  
Silicon Oxide ◽  
Microwave Plasma ◽  
Plasma Deposition ◽  
Oxide Thin Films ◽  
Dual Mode ◽  
Amorphous Silicon Oxide

TEM Imaging of Amorphous Silicon Oxide - Silicon Nitride - Silicon Oxide Dielectric Films

2001 ◽  
Vol 7 (S2) ◽  
pp. 1228-1229
Author(s):  
Lew Rabenberg ◽  
J. P. Zhou ◽  
Kil-Soo Ko ◽  
Rita Johnson
Keyword(s):  
Thin Films ◽  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Atomic Number ◽  
Silicon Oxide ◽  
Gate Dielectrics ◽  
Dielectric Films ◽  
Amorphous Silicon Oxide ◽  
Nitride Oxide ◽  
Silicon Based

Thin films of amorphous silicon oxide and silicon nitride are routinely used as gate dielectrics in silicon-based microelectronic devices. It is valuable to be able to image them and measure their thicknesses quickly and accurately. This brief note describes conditions that can be used to obtain accurate and reproducible TEM images of oxide-nitride-oxide (ONO) thin films.Obtaining adequate contrast differences between oxide and nitride is not trivial because they have the same average atomic number, and both phases are amorphous. As stoichiometric compounds, both SiO2 and Si3N4 would have average atomic numbers equal to 10. For SiO2, (14+2(8))/3=10, and for Si3N4, (3(14)+4(7))/7=10. Thus, the atomic number contrast between these two is weak or nonexistent. Similarly, the amorphous character prevents the use of conventional diffraction contrast techniques.However, the density of Si3N4 (3.2 g/cm3) is considerably greater than the density of SiO2 (2.6 g/cm3), reflecting the higher average coordination of N compared with O.

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