Optimization of a 64Gbps O-band Thin-Rib PN Junction Mach-Zehnder Modulator Fabricated on a 200mm Silicon Photonics Platform

Scaling up of photonic devices is the current research of interest to meet the alarming demand growth in the data centres. The efficiency of the modulator is determined by the performance of the phase shifter. In this paper, a plus-shaped PN junction phase shifter is designed and analysed. This design improved the modulation efficiency and reduced optical loss for high-speed data operation. The width of the P doped region and thickness of thedoped regions in the slabs are varied to obtain high modulation efficiency. The circuit-level simulation analysis was performed on the proposed phase shifterimported in a travelling wave electrode silicon Mach Zehnder modulator. At 80 Gbps, a maximum extinction ratio of 12.39 dB with a bit error rate of 8.67×10-8 was obtained at VπLπ of 1.05 V.cm for the length of the phase shifter of 3.5 mm. The calculated intrinsic 3 dB bandwidth is ~38 GHz and the energy per bit transmission is 1.71pJ/bit.Further analysis was performed to identify the maximum communication distance supported by this proposed phase shifter design in the silicon Mach Zehnder modulator for the data centre requirements.

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Design and Implementation of Travelling Wave Electrode Silicon Mach Zehnder Modulator based Plus-Shaped PN Junction Phase Shifter for Data Centre Application

International Journal of Circuits, Systems and Signal Processing ◽

10.46300/9106.2021.15.66 ◽

2021 ◽

Vol 15 ◽

pp. 586-594

Author(s):

R. G. Jesuwanth Sugesh ◽

A. Sivasubramanian

Keyword(s):

Phase Shifter ◽

Simulation Analysis ◽

Extinction Ratio ◽

Optical Loss ◽

Travelling Wave ◽

Data Centre ◽

Pn Junction ◽

Data Rates ◽

Mach Zehnder Modulator ◽

Speed Data Transmission

Silicon Mach-Zehnder modulator (SMZM)is fit to high-contrast optical modulation in wide ranges ofspectral along 50 Gbaud symbol rates. Some times itsefficiency is lower in wavelength about 1.31 μm than 1.55μm, it can decrease the Phase Shifter (PS) efficiency andoccupies large amount of data rates. In this manuscript,the plus-shaped PN junction Phase Shifter (PS) isproposed. The major aim of the proposed work is to createan optimum CD type plus-shaped PS including lesser VπL.Silicon MZM including proposed PS can satisfy thehigher-speed data transmission requirement on theapplications of inter with intra data centre. The objectiveof this method is to increase the modulation efficiency(ME) by decreasing the optical loss for higher-speed datarate (DR). To get greater efficiency of modulation, the Pdoped region width and the thickness of doped regions arediffer under slabs. The simulation analysis of circuit-levelis executed in the proposed PS acquired at travelling waveelectrode (TWE) silicon Mach Zehnder modulator. In 80Gbps, the 12.39 dB maximal extinction ratio along8.67×10-8 bit error rate (BER) was acquired in VπLπ of1.05 V.cm for 3.5 mm PS length. The measured intrinsicbandwidth of 3 dB denotes ~38 GHz, whereas thetransmission energy per bit denotes 1.71pJ/bit. Moreexamines are carried out to recognize the maximalcommunication distance using proposed PS under SMZMfor the requirements of data centre.

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