Design and Implementation of Travelling Wave Electrode Silicon Mach Zehnder Modulator based Plus-Shaped PN Junction Phase Shifter for Data Centre Application

Silicon Mach-Zehnder modulator (SMZM)is fit to high-contrast optical modulation in wide ranges ofspectral along 50 Gbaud symbol rates. Some times itsefficiency is lower in wavelength about 1.31 μm than 1.55μm, it can decrease the Phase Shifter (PS) efficiency andoccupies large amount of data rates. In this manuscript,the plus-shaped PN junction Phase Shifter (PS) isproposed. The major aim of the proposed work is to createan optimum CD type plus-shaped PS including lesser VπL.Silicon MZM including proposed PS can satisfy thehigher-speed data transmission requirement on theapplications of inter with intra data centre. The objectiveof this method is to increase the modulation efficiency(ME) by decreasing the optical loss for higher-speed datarate (DR). To get greater efficiency of modulation, the Pdoped region width and the thickness of doped regions arediffer under slabs. The simulation analysis of circuit-levelis executed in the proposed PS acquired at travelling waveelectrode (TWE) silicon Mach Zehnder modulator. In 80Gbps, the 12.39 dB maximal extinction ratio along8.67×10-8 bit error rate (BER) was acquired in VπLπ of1.05 V.cm for 3.5 mm PS length. The measured intrinsicbandwidth of 3 dB denotes ~38 GHz, whereas thetransmission energy per bit denotes 1.71pJ/bit. Moreexamines are carried out to recognize the maximalcommunication distance using proposed PS under SMZMfor the requirements of data centre.

Download Full-text

Modelling and Analysis of a Plus-Shaped PN Junction Phase Shifter for Data Centre Applications

WSEAS TRANSACTIONS ON ELECTRONICS ◽

10.37394/232017.2021.12.5 ◽

2021 ◽

Vol 12 ◽

pp. 32-37

Author(s):

R.G. Jesuwanth Sugesh ◽

A. Sivasubramanian

Keyword(s):

High Speed ◽

Phase Shifter ◽

Simulation Analysis ◽

Extinction Ratio ◽

Optical Loss ◽

Travelling Wave ◽

Data Centre ◽

Pn Junction ◽

High Modulation ◽

Mach Zehnder Modulator

Scaling up of photonic devices is the current research of interest to meet the alarming demand growth in the data centres. The efficiency of the modulator is determined by the performance of the phase shifter. In this paper, a plus-shaped PN junction phase shifter is designed and analysed. This design improved the modulation efficiency and reduced optical loss for high-speed data operation. The width of the P doped region and thickness of thedoped regions in the slabs are varied to obtain high modulation efficiency. The circuit-level simulation analysis was performed on the proposed phase shifterimported in a travelling wave electrode silicon Mach Zehnder modulator. At 80 Gbps, a maximum extinction ratio of 12.39 dB with a bit error rate of 8.67×10-8 was obtained at VπLπ of 1.05 V.cm for the length of the phase shifter of 3.5 mm. The calculated intrinsic 3 dB bandwidth is ~38 GHz and the energy per bit transmission is 1.71pJ/bit.Further analysis was performed to identify the maximum communication distance supported by this proposed phase shifter design in the silicon Mach Zehnder modulator for the data centre requirements.

Download Full-text

Performance analysis of carrier depletion silicon PIN phase shifter

Journal of Optical Communications ◽

10.1515/joc-2019-0259 ◽

2020 ◽

Vol 0 (0) ◽

Author(s):

Jesuwanth Sugesh Ramesh Gabriel ◽

Sivasubramanian Arunagiri

Keyword(s):

Performance Analysis ◽

Bit Error Rate ◽

Error Rate ◽

Phase Shifter ◽

Extinction Ratio ◽

Fibre Length ◽

Data Rate ◽

Operating Voltage ◽

Data Centre ◽

Mach Zehnder Modulator

AbstractIn this paper, we report the performance of a carrier depletion Silicon PIN phase shifter with over layer of 130 nm. It is observed that an optimum intrinsic gap of 250 nm for a device length of 5 mm at 2 V, resulted in Extinction Ratio (ER) of 23.41 dB and Bit Error Rate (BER) of 1.00 × 10−7 is obtained for 50 Gbps. The phase shifter is also designed for length 2 mm with an intrinsic gap of 100 nm at an operating voltage <4 V. The study also reveals that the proposed design for Mach-Zehnder modulator operating at a data rate of 100 Gbps for the concentration of P = 7 × 1017 cm−3 and N = 5 × 1017 cm−3 gives better BER and phase performance. The proposed design was also analysed in an intra-data centre communication setup of fibre length 15 km.

Download Full-text

Design of a carrier-depletion Mach-Zehnder modulator in 250 nm silicon-on-insulator technology

Advances in Radio Science ◽

10.5194/ars-15-269-2017 ◽

2017 ◽

Vol 15 ◽

pp. 269-281 ◽

Cited By ~ 6

Author(s):

María Félix Rosa ◽

Lotte Rathgeber ◽

Raik Elster ◽

Niklas Hoppe ◽

Thomas Föhn ◽

...

Keyword(s):

Phase Shifter ◽

Optical Loss ◽

Free Carrier ◽

Silicon On Insulator ◽

Optical Modulator ◽

Active Layer Thickness ◽

Free Carrier Absorption ◽

Pn Junction ◽

Mach Zehnder Modulator ◽

Silicon On Insulator Technology

Abstract. We present the design of a single-drive Mach-Zehnder modulator for amplitude modulation in silicon-on-insulator technology with 250 nm active layer thickness. The applied RF signal modulates the carrier density in a reverse biased lateral pn-junction. The free carrier plasma dispersion effect in silicon leads to a change in the refractive index. The modulation efficiency and the optical loss due to free carriers are analyzed for different doping configurations. The intrinsic electrical parameters of the pn-junction of the phase shifter like resistance and capacitance and the corresponding RC-limit are studied. A first prototype in this technology fabricated at the IMS CHIPS Stuttgart is successfully measured. The structure has a modulation efficiency of VπL = 3.1 V ⋅ cm at 2 V reverse bias. The on-chip insertion loss is 4.2 dB. The structure exhibits an extinction ratio of around 32 dB. The length of the phase shifter is 0.5 mm. The cutoff frequency of the entire modulator is 30 GHz at 2 V. Finally, an optimization of the doping structure is presented to reduce the optical loss and to improve the modulation efficiency. The optimized silicon optical modulator shows a theoretical modulation efficiency of VπL = 1.8 V ⋅ cm at 6 V bias and a maximum optical loss due to the free carrier absorption of around 3.1 dB cm−1. An ultra-low fiber-to-fiber loss of approximately 4.8 dB is expected using the state of the art optical components in the used technology.

Download Full-text