Mean Free Path of Photo‐Electronic Excitations in Hydrogenated Amorphous Silicon and Silicon Germanium Alloy Semiconductors

2021 ◽  
Author(s):  
Nikolas J. Podraza ◽  
David B. Saint John ◽  
Maxwell M. Junda ◽  
Robert W. Collins
Keyword(s):  
Amorphous Silicon ◽  
Free Path ◽  
Silicon Germanium ◽  
Hydrogenated Amorphous Silicon ◽  
Mean Free Path ◽  
Electronic Excitations ◽  
Germanium Alloy ◽  
Alloy Semiconductors ◽  
Hydrogenated Amorphous

A Comparative Study of the Electronic Stability of Hydrogenated Amorphous Silicon and Silicon-Germanium Alloy Material

1991 ◽  
Vol 30 (Part 1, No. 2) ◽  
pp. 228-232 ◽  
Author(s):  
Ulrich Schneider ◽  
Andreas Scholz ◽  
Bernd Schröder ◽  
Franz Karg ◽  
Helmold Kausche
Keyword(s):  
Comparative Study ◽  
Amorphous Silicon ◽  
Silicon Germanium ◽  
Hydrogenated Amorphous Silicon ◽  
Alloy Material ◽  
Germanium Alloy ◽  
Hydrogenated Amorphous

Properties of Catalytic-Cvd Amorphous Silicon-Germanium (a-SiGe:H)

1990 ◽  
Vol 192 ◽  
Author(s):  
Hideki Matsumura ◽  
Masaaki Yamaguchi ◽  
Kazuo Morigaki
Keyword(s):  
Amorphous Silicon ◽  
Silicon Germanium ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Vapor ◽  
Characteristic Energy ◽  
Optical Band Gaps ◽  
Spin Resonance ◽  
Amorphous Silicon Germanium ◽  
Conductive Properties ◽  
Hydrogenated Amorphous

ABSTRACTHydrogenated amorphous silicon-germanium (a-SiGe:H) films are prepared by the catalytic chemical vapor deposition (Cat-CVD) method using a SiH4, GeH4 and H4 gas mixture. Properties of the films are investigated by the photo-thermal deflection spectroscopy (PDS) and electron spin resonance (ESR) measurements, in addition to the photo-conductive and structural studies. It is found that the characteristic energy of Urbach tail, ESR spin density and other photo-conductive properties of Cat-CVD a-SiGe:H films with optical band gaps around 1.45 eV are almost equivalent to those of the device quality glow discharge hydrogenated amorphous silicon (a-Si:H).

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