Development Progress of 3–5 μm Mid-Infrared Lasers: OPO, Solid-State and Fiber Laser

A 3–5 μm mid-infrared band is a good window for atmospheric transmission. It has the advantages of high contrast and strong penetration under high humidity conditions. Therefore, it has important applications in the fields of laser medicine, laser radar, environmental monitoring, remote sensing, molecular spectroscopy, industrial processing, space communication and photoelectric confrontation. In this paper, the application background of mid-infrared laser is summarized. The ways to realize mid-infrared laser output are described by optical parametric oscillation, mid-infrared solid-state laser doped with different active ions and fiber laser doped with different rare earth ions. The advantages and disadvantages of various mid-infrared lasers are briefly described. The technical approaches, schemes and research status of mid-infrared lasers are introduced.

Broadband highly efficient nonlinear optical processes in on-chip integrated lithium niobate microdisk resonators of Q-factor above 108

Microresonators of ultrahigh quality (Q) factors represent a crucial type of photonic devices aiming at ultra-high spectral resolution, ultra-high sensitivity to the environmental perturbations, and efficient nonlinear wavelength conversions at low threshold pump powers. Lithium niobate on insulator (LNOI) microdisks of high Q factors are particularly attractive due to its large second-order nonlinear coefficient and strong electro-optic property. In this Letter, we break through the long standing bottleneck in achieving the Q factors of LNOI micro-resonators beyond 108, which approaches the intrinsic material absorption limit of lithium niobate (LN). The ultra-high Q factors give rise to a rich family of nonlinear optical phenomena from optical parametric oscillation (OPO) to harmonics generation with unprecedented characteristics including ultra-low pump threshold, high wavelength conversion efficiency, and ultra-broad operation bandwidth. Specifically, the threshold of OPO is measured to be only 19.6 μW, and the absolute conversion efficiency observed in the second harmonic generation reaches 23%. The record-breaking performances of the on-chip ultra-high Q LNOI microresonators will have profound implication for both photonic research and industry.