Integrated 3D Ionic Electrets Electronic Skin (e-Skin) For Harvesting of TENG Energy Through Push-Pull 3D Ionic Electrets and Ion-ion Hopping Mechanism

The development of highly durable, stretchable, and steady triboelectric nanogenerators (TENGs) is highly desirable to satisfy the tight requirement of energy demand. Here, we presented a novel integrated polymeric membrane that is designed by PEDOT:PSSa-naphthalene sulfonated polyimide (PPNSP)-EMI. BF4 Electronic skin (e-skin) for potential TENG applications. The proposed TENG e-skin is fabricated by an interconnected architecture with push-pull 3D ionic electrets that can threshold the transfer of charges through an ion-hopping mechanism for the generation of a higher output voltage (Voc) and currents (Jsc) against an electronegative PTFE film. PPNSP was synthesized from the condensation of naphthalene-tetracarboxylic dianhydride, 2, 2’-benzidine sulfonic acid, and 4,4’diaminodiphenyl ether through an addition copolymerization protocol, and PEDOT:PSSa was subsequently deposited using the dip-coating method. Porous networked PPNSP e-skin with continuous ion transport nano-channels is synthesized by introducing simple and strong molecular push-pull 3D interactions via intrinsic ions. In addition, EMI. BF4 ionic liquid (IL) is doped inside the PPNSP skin to interexchange ions to enhance the potential window for higher output Voc and Iscs. In this article, we investigated the push-pull dynamic interactions between PPNSP-EMI.BF4 e-skin and PTFE and tolerable output performance. The novel PPNSP- EMI.BF4 e-skin TENG produced upto 49.1 V and 1.03 µA at 1 Hz, 74 V and 1.45 µA at 2 Hz, 122.3 V and 2.21 µA at 3 Hz and 171 V and 3.6 µA at 4 Hz, and 195 V and 4.43 µA at 5 Hz, respectively. The proposed novel TENG device was shown to be highly flexible, highly durable, commercially viable, and a prospective candidate to produce higher electrical charge outputs at various applied frequencies.

Effect of Light Irradiation on the Diffusion Rate of the Charge Carrier Hopping Mechanism in P3HT–ZnO Nanoparticles Studied by μ+SR

Blended regio-regular P3HT–ZnO nanoparticles are a hybrid material developed as an active layer for hybrid solar cells. The study of the hopping mechanisms and diffusion rates of regio-regular P3HT–ZnO nanoparticles is significant for obtaining intrinsic charge transport properties that provide helpful information for preparing high-performance solar cells. The temperature dependences of the parallel and perpendicular diffusion rates in regio-regular P3HT–ZnO nanoparticles determined from muon spin relaxation measurements were investigated by applying various longitudinal fields. We investigated the effect of light irradiation on the diffusion rates in regio-regular P3HT–ZnO nanoparticles. We found that with increasing temperature, the parallel diffusion rate decreased, while the perpendicular diffusion rate increased. The ratio of the parallel to perpendicular diffusion rate (D‖/D⊥) can be used to indicate the dominant charge carrier hopping mechanism. Without light irradiation, perpendicular diffusion dominates the charge carrier hopping, starting at 25 K, with a ratio of 1.70×104, whereas with light irradiation, the perpendicular diffusion of the charge carrier starts to dominate at the temperature of 10 K, with a ratio of 2.40×104. It is indicated that the additional energy from light irradiation affects the diffusion, especially the charge diffusion in the perpendicular direction.