Progressive p-channel vertical transistors using electrodeposited copper oxide designed with grain boundary tunability

We suggested strategically designed electrodeposition method for the coating of p-type copper(I) oxide (Cu2O) channel for oxide thin film transistors. Up to now, conventional p-type oxide semiconductors have revealed poor...

Investigation of the Optical, Structural and Compositional Properties of Electrodeposited Lead Manganese Sulfide (PbMnS) Thin Films for Possible Device Applications

The properties of PbMnS semiconductor thin films deposited on fluorine-doped tin oxide (FTO) substrate using an electrodeposition method are investigated to determine their possible device applications. Lead acetate, manganese sulfate, and thiourea were used as precursors for sources of lead, manganese, and sulfur ions respectively. The concentration of lead, manganese, and sulfur ions sources with deposition voltage of 1.8 V was kept constant. The films were deposited using three electrodes system of electrodeposition method by varying deposition time. The films were characterized for optical, structural, morphological, and compositional properties and results showed that the absorbance, refractive index, and optical conductivity of the films are high in the visible (VIS) and near-infrared (NIR) regions but decreases in the NIR. These three properties initially increased with an increase in deposition time up to a time of 70 s which has the highest values of these properties before decreasing to lower values. The transmittance and extinction coefficient of the films are low in both VIS and NIR regions. The bandgap energy of PbS was found to be blue shifted with values of 1.51 eV, 1.54 eV, 1.60 eV, 1.45 eV, and 1.35 eV for the films deposited at 30 s, 50 s, 70 s, 90 s, and 110 s respectively. XRD analysis showed that the films are crystalline with sharp peaks positions indexable to crystalline planes of (111), (200), (211), (220), (311) and (400) with average crystallite size in the range of 16.110 nm to 17.218 nm. Energy-dispersive X-ray spectroscopy (EDX) results showed that the films are composed of lead, manganese, and sulfur but there are some impurity elements present mostly as a result of the substrate used. These properties exhibited by the deposited thin films of PbMnS showed that they can be used for many optoelectronic applications such as photovoltaic cells, sensors, photoconductors, etc.