Integrated Structure and Device Engineering for High Performance and Scalable Quantum Dot Infrared Photodetectors

Small ◽  
2020 ◽  
Vol 16 (47) ◽  
pp. 2003397
Author(s):  
Kaimin Xu ◽  
Wenjia Zhou ◽  
Zhijun Ning
Keyword(s):  
Quantum Dot ◽  
High Performance ◽  
Infrared Photodetectors ◽  
Quantum Dot Infrared Photodetectors ◽  
Device Engineering

High-Performance InAs/GaAs Quantum Dots Infrared Photodetector With/Without Al0.2Ga0.8As Blocking Layers

2001 ◽  
Vol 692 ◽  
Author(s):  
Zhengmao Ye ◽  
Joe C. Campbell ◽  
Zhonghui Chen ◽  
O. Baklenov ◽  
E. T. Kim ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Dark Current ◽  
High Performance ◽  
Infrared Photodetectors ◽  
Infrared Photodetector ◽  
Inas Quantum Dots ◽  
Quantum Dot Infrared Photodetectors

AbstractInAs/AlGaAs quantum dot infrared photodetectors based on bound-to-bound intraband transitions in undoped InAs quantum dots are reported. AlGaAs blocking layers were employed to achieve low dark current. The photoresponse peaked at 6.2 μm. At 77 K and –0.7 V bias the responsivity was 14 mA/W and the detectivtiy, D*, was 1010 cmHz1/2/W.

Intersublevel quantum-dot infrared photodetectors

2017 ◽  
Author(s):  
E. Towe ◽  
D. Pal
Keyword(s):  
Quantum Dot ◽  
High Performance ◽  
Photon Absorption ◽  
Infrared Photodetectors ◽  
Photon Detectors ◽  
Photon Detection ◽  
Quantum Dot Infrared Photodetectors ◽  
Background Material ◽  
Optical Matrix Element ◽  
Infrared Photon

This article describes the basic principles of semiconductor quantum-dot infrared photodetectors based on conduction-band intersublevel transitions. Sufficient background material is discussed to enable an appreciation of the subtle differences between quantum-well and quantum-dot devices. The article first considers infrared photon absorption and photon detection, along with some metrics for photon detectors and the detection of infrared radiation by semiconductors. It then examines the optical matrix element for interband, intersubband and intersublevel transitions before turning to experimental single-pixel quantum-dot infrared photodetectors. In particular, it explains the epitaxial synthesis of quantum dots and looks at mid-wave and long-wave quantum-dot infrared photodetectors. It also evaluates the characteristics of quantum-dot detectors and possible development of quantum-dot focal plane array imagers. The article concludes with an assessment of the challenges and prospects for high-performance detectors and arrays.

scholarly journals High-performance mid-infrared quantum dot infrared photodetectors

2005 ◽  
Vol 38 (13) ◽  
pp. 2135-2141 ◽  
Author(s):  
S Chakrabarti ◽  
A D Stiff-Roberts ◽  
X H Su ◽  
P Bhattacharya ◽  
G Ariyawansa ◽  
...  
Keyword(s):  
Quantum Dot ◽  
High Performance ◽  
Infrared Photodetectors ◽  
Mid Infrared ◽  
Quantum Dot Infrared Photodetectors

High performance InAs quantum dot infrared photodetectors (QDIP) on InP by MOCVD

2005 ◽  
Author(s):  
Wei Zhang ◽  
Ho-Chul Lim ◽  
Maho Taguchi ◽  
Stanley Tsao ◽  
John Szafraniec ◽  
...  
Keyword(s):  
Quantum Dot ◽  
High Performance ◽  
Infrared Photodetectors ◽  
Quantum Dot Infrared Photodetectors ◽  
Inas Quantum Dot

Single-Period InAs–GaAs Quantum-Dot Infrared Photodetectors

2008 ◽  
Vol 20 (18) ◽  
pp. 1575-1577
Author(s):  
Shu-Ting Chou ◽  
Shih-Yen Lin ◽  
Chi-Che Tseng ◽  
Yi-Hao Chen ◽  
Cheng-Nan Chen ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Infrared Photodetectors ◽  
Single Period ◽  
Quantum Dot Infrared Photodetectors ◽  
Gaas Quantum Dot

Enhanced Normal-Incident Absorption of Quantum-Dot Infrared Photodetectors With Smaller Quantum Dots

2008 ◽  
Vol 20 (14) ◽  
pp. 1240-1242 ◽  
Author(s):  
Chi-Che Tseng ◽  
Shu-Ting Chou ◽  
Yi-Hao Chen ◽  
Cheng-Nan Chen ◽  
Wei-Hsun Lin ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Infrared Photodetectors ◽  
Quantum Dot Infrared Photodetectors
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