Creation of Color Centers in SiC PN Diodes Using Proton Beam Writing

2019 ◽  
Vol 963 ◽  
pp. 709-713
Author(s):  
Yoji Chiba ◽  
Yuichi Yamazaki ◽  
Takahiro Makino ◽  
Shinichiro Sato ◽  
Naoto Yamada ◽  
...  
Keyword(s):  
Magnetic Resonance ◽  
Proton Beam ◽  
Room Temperature ◽  
Color Centers ◽  
Silicon Vacancy ◽  
Proton Beam Writing ◽  
Pn Junction ◽  
Optically Detected Magnetic Resonance ◽  
Junction Diode ◽  
Optically Detected

We demonstrated that silicon vacancy (VSi) can be created in SiC pn junction diode by proton beam writing (PBW) without degradation of the diode performance. The VSi showed the same specific emission for both optically and electrically excitation, which suggests that electrically controllable VSi was created. In addition, optically detected magnetic resonance (ODMR) signal was successfully detected from optically excited VSi at room temperature. This result suggests that VSi introduced into the device by PBW still maintain spin manipulating capability, which is an important step toward realizing SiC devices internally equipped with a VSi-based quantum sensor.

Electrically controllable position-controlled color centers created in SiC pn junction diode by proton beam writing

2018 ◽  
Vol 33 (20) ◽  
pp. 3355-3361 ◽  
Author(s):  
Yuichi Yamazaki ◽  
Yoji Chiba ◽  
Takahiro Makino ◽  
Shin-Ichiro Sato ◽  
Naoto Yamada ◽  
...  
Keyword(s):  
Proton Beam ◽  
Color Centers ◽  
Proton Beam Writing ◽  
Pn Junction ◽  
Junction Diode ◽  
Image Position

Abstract

Photoluminescence and Odmr Studies of Pristine and Photodegraded Poly (3-Hexylthiophene) Films and Solutions

1989 ◽  
Vol 173 ◽  
Author(s):  
L. S. Swanson ◽  
J. Shinar ◽  
L. R. Lichty ◽  
K. Yoshino
Keyword(s):  
Magnetic Resonance ◽  
Room Temperature ◽  
Oxidation Process ◽  
Optically Detected Magnetic Resonance ◽  
Optically Detected ◽  
Increasing Temperature

ABSTRACTThe photoluminescence (PL) and optically detected magnetic resonance (ODMR) spectra of poly(3-hexylthiophene) in solutions of CCl4, toluene, and CH2Cl2, and films cast from these solutions, are described and discussed. In solution, the PL yield is 7%, and increases with increasing temperature. In oxygen-free, protected films cast from these solutions, the room-temperature yield is ∼0.7%, the spectra is red shifted by ∼0.5eV, and strong peaks at 1.52, 1.69, and 1.86eV appear. In films and CH2Cl2 solutions, the ODMR is resolvable into narrow and broad components, and its intensity ΔL/L is ∼5 × l0−5 at room temperature. A strong photoinduced oxidation process quenches the PL upon exposure to O2 but not water, at a rate possibly limited by O2 diffusion.

Enhancement of ODMR Contrasts of Silicon Vacancy in SiC by Thermal Treatment

2020 ◽  
Vol 1004 ◽  
pp. 337-342
Author(s):  
Yoji Chiba ◽  
Yuichi Yamazaki ◽  
Shin Ichiro Sato ◽  
Takahiro Makino ◽  
Naoto Yamada ◽  
...  
Keyword(s):  
Magnetic Resonance ◽  
Thermal Treatment ◽  
Proton Beam ◽  
Energy Levels ◽  
High Density ◽  
Annealing Behavior ◽  
Silicon Vacancy ◽  
Temperature Range ◽  
Defect Centers ◽  
Optically Detected

We demonstrated the enhancement of the optically detected magnetic resonance (ODMR) contrast of negatively charged silicon vacancy (VSi-) in SiC by thermal treatment. To create high density VSi-, Proton Beam Writing (PBW) was conducted. After an annealing at 600 °C, ODMR contrast showed the highest value in the investigated temperature range. At a fewer irradiation fluence, despite no significant change was observed in terms of VSi- PL intensity, the improvement of the ODMR contrast was observed. Considering defect energy levels and annealing behavior previously reported, it was deduced that the improvement of the ODMR contrast was caused by the reduction of other irradiation induced defect centers, such as EH1/EH3 centers.

scholarly journals Optically Detected Magnetic Resonance in Neutral Silicon Vacancy Centers in Diamond via Bound Exciton States

2020 ◽  
Vol 125 (23) ◽  
Author(s):  
Zi-Huai Zhang ◽  
Paul Stevenson ◽  
Gergő Thiering ◽  
Brendon C. Rose ◽  
Ding Huang ◽  
...  
Keyword(s):  
Magnetic Resonance ◽  
Silicon Vacancy ◽  
Optically Detected Magnetic Resonance ◽  
Optically Detected

Optically Detected Magnetic Resonance and Double Beam Photoluminescence of CdS/HgS/CdS Nanoparticles

1998 ◽  
Vol 536 ◽  
Author(s):  
H. Porteanu ◽  
A. Glozman ◽  
E. Lifshitz ◽  
A. Eychmüller ◽  
H. Weller
Keyword(s):  
Optical Properties ◽  
Magnetic Resonance ◽  
Cds Nanoparticles ◽  
Electron Hole ◽  
Cladding Layer ◽  
Double Beam ◽  
Optically Detected Magnetic Resonance ◽  
Optically Detected ◽  
Cladding Layers ◽  
Hole Recombination

AbstractCdS/HgS/CdS nanoparticles consist of a CdS core, epitaxially covered by one or two monolayers of HgS and additional cladding layers of CdS. The present paper describes our efforts to identify the influence of CdS/HgS/CdS interfaces on the localization of the photogenerated carriers deduced from the magneto-optical properties of the materials. These were investigated by the utilization of optically detected magnetic resonance (ODMR) and double-beam photoluminescence spectroscopy. A photoluminescence (PL) spectrum of the studied material, consists of a dominant exciton located at the HgS layer, and additional non-excitonic band, presumably corresponding to the recombination of trapped carriers at the interface. The latter band can be attenuated using an additional red excitation. The ODMR measurements show the existence of two kinds of electron-hole recombination. These electron-hole pairs maybe trapped either at a twin packing of a CdS/HgS interface, or at an edge dislocation of an epitaxial HgS or a CdS cladding layer.

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